STMicroelectronics STB40NS15T4

Overview

STB40NS15T4 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in D2PAK package, rated for 150 V drain-source voltage, 40 A continuous drain current at 25°C, and 0.045 Ω typical R_DS(on) at V_GS = 10 V. It features MESH OVERLAY™ technology, exceptional dv/dt capability, and low gate charge-optimized for high-efficiency switching in DC-DC converters and motor control inverters.

For engineers reviewing the STB40NS15T4 datasheet, STB40NS15T4 pinout, STB40NS15T4 application, or STB40NS15T4 equivalent, key selection criteria include its 150 V V_DS, 0.045 Ω R_DS(on), 100 nC total gate charge, 29.4 S transconductance, and D2PAK thermal resistance of 0.5 °C/W junction-to-case.

Technical Context

This MOSFET employs ST's proprietary MESH OVERLAY™ strip layout process to achieve lower on-resistance and reduced intrinsic capacitances versus conventional planar designs. Its 7 V/ns dv/dt rating and unclamped inductive switching capability (E_AS = 350 mJ) support robust operation in hard-switched topologies.

The device integrates a fast-recovery body diode with t_rr = 270 ns and Q_rr = 200 nC under 100 A/µs di/dt, enabling efficient synchronous rectification and freewheeling in half-bridge configurations without external diodes.

Key Specifications

Pinout & Package

STB40NS15T4 uses the D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical performance. The package complies with ECOPACK® environmental standards and supports lead-free reflow soldering up to 300°C peak temperature.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 150 V power MOSFET applications.

Compared with IRF640NPbF and STP40NF15, STB40NS15T4 delivers superior power density via D2PAK's 0.5 °C/W junction-to-case resistance and enables higher-current operation without derating-critical for space-constrained industrial inverters and embedded power modules.

Availability

STB40NS15T4 is available at Aetrix Electronics and suitable for motor drive inverters, DC-DC power converters, solar microinverters, and industrial UPS output stages requiring stable component supply and long-term manufacturability.

Supply support for STB40NS15T4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete devices, and MEMS sensors for automotive, industrial, and consumer markets.

The STB40NS15T4 belongs to ST's MESH OVERLAY™ Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial motor controls and renewable energy systems where ruggedness and thermal performance are critical.

FAQ

Is STB40NS15T4 RoHS-compliant and lead-free?

Yes. STB40NS15T4 is manufactured in an ECOPACK®-compliant D2PAK package with lead-free second-level interconnects, meeting RoHS Directive 2011/65/EU and JEDEC JESD97 marking requirements. The inner box label specifies the lead-free category and maximum soldering temperature (300°C).

What is the maximum safe operating area (SOA) for STB40NS15T4 at 100°C case temperature?

At T_C = 100°C, the continuous drain current is derated to 25 A per the Absolute Maximum Ratings table. The SOA curve (Figure 2) confirms 100 V × 25 A = 2.5 kW pulse capability for 10 ms, limited by R_thj-case = 0.5 °C/W and T_j(max) = 175°C.

Can STB40NS15T4 be used in avalanche mode repeatedly?

No. While STB40NS15T4 is rated for single-pulse avalanche energy (E_AS = 350 mJ), its datasheet does not specify repetitive avalanche capability. Operation in repetitive avalanche is not guaranteed and may cause parametric shift or premature failure.

Does the body diode support synchronous rectification in buck converters?

Yes. With t_rr = 270 ns, Q_rr = 200 nC, and V_SD = 1.5 V at 40 A, the integrated body diode performs comparably to discrete Schottky diodes in 100–500 kHz buck converters-enabling simplified layout and reduced BOM count without sacrificing efficiency.