STMicroelectronics STB41N40DM6AG

Overview

STB41N40DM6AG from STMicroelectronics is an AEC-Q101 qualified N-channel 400 V, 50 mΩ typ. (65 mΩ max.) Power MOSFET in D²PAK package, featuring fast-recovery body diode (trr = 103 ns @ 25°C), 100% avalanche tested (EAS = 760 mJ), and extremely high dv/dt ruggedness (100 V/ns). It serves as a primary switching device in high-efficiency ZVS phase-shift converters and bridge topologies for automotive and industrial power supplies.

For engineers reviewing the STB41N40DM6AG datasheet, STB41N40DM6AG pinout, STB41N40DM6AG application, or STB41N40DM6AG equivalent, key selection criteria include RDS(on) vs. temperature stability, Qrr (0.44 µC), Coss_eq (450 pF), gate charge (Qg = 53 nC), and junction-to-case thermal resistance (0.5 °C/W).

Technical Context

This MDmesh DM6-series MOSFET integrates a Zener-protected gate and optimized charge distribution to achieve low Qgd (29 nC) and ultra-low recovery charge-critical for minimizing switching losses in hard- and soft-switching topologies. Its 400 V V(BR)DSS with <±0.5% drift over –55 to 150 °C enables stable operation in high-voltage DC bus applications.

The device's dv/dt ruggedness (100 V/ns) and 150 A pulsed drain current support robust operation under transient overvoltage and inductive load switching. Its fast-recovery diode delivers trr = 103 ns at 25°C and 180 ns at 150°C, enabling efficient freewheeling in synchronous rectification and half-bridge configurations.

Key Specifications

Pinout & Package

Package: D²PAK (TO-263) type A2 - Surface-mount, thermally enhanced outline with exposed drain tab (pin 2) for direct heatsink mounting. Dimensions: 10.4 × 9.35 × 4.6 mm (L × W × H), 3-pin configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW41N40DM6 and IPP60R190C7XKSA1, STB41N40DM6AG delivers superior thermal density (0.5 °C/W), lowest Qrr in its voltage class, and automotive-grade reliability-making it optimal for space-constrained, high-efficiency 400 V DC applications requiring fast diode recovery and avalanche robustness.

Availability

STB41N40DM6AG is available at Aetrix Electronics and suitable for automotive on-board chargers, industrial phase-shift full-bridge SMPS, and server PSU LLC resonant converters requiring stable component supply, long-term lifecycle support, and AEC-Q101 traceability.

Supply support for STB41N40DM6AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to the MDmesh DM6 family-engineered specifically for high-efficiency, high-voltage switching in ZVS and resonant topologies where low Qrr, high dv/dt immunity, and thermal density are critical.

FAQ

Is STB41N40DM6AG suitable for synchronous rectification?

Yes. Its integrated fast-recovery body diode (trr = 103 ns, Qrr = 0.44 µC) and low R_DS(on) (50 mΩ typ.) make it viable for self-driven synchronous rectification in LLC and forward converters up to 200 kHz. Gate threshold (3–5 V) allows direct drive from transformer-coupled gate signals without level-shifting.

What is the maximum safe operating area (SOA) at 100°C case temperature?

At T_C = 100°C, the continuous drain current is derated to 26 A (per Table 1), and the SOA is limited by R_DS(on) in the linear region. For pulse widths ≤100 µs, the device supports up to 150 A (I_DM) with V_DS ≤ 100 V, verified by Figure 1 in DS12571.

Does the device require external gate protection?

No. STB41N40DM6AG integrates Zener protection between gate and source, rated for ±25 V. External gate resistors (≥4.7 Ω) are recommended for EMI control and ringing suppression, but discrete Zener diodes or TVS devices are unnecessary under normal operation.

How does thermal performance compare between D²PAK and TO-247 packages in this series?

The D²PAK (R_thJC = 0.5 °C/W) provides 33% better junction-to-case thermal resistance than the TO-247 variant (R_thJC = 0.75 °C/W), enabling higher power density in surface-mount designs. However, TO-247 offers greater mechanical stability and higher creepage/clearance for AC-coupled systems.