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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB42N60M2-EP

Name: STB42N60M2-EP
Brand: STMicroelectronics
SKU: STB42N60M2-EP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB42N60M2-EP

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB42N60M2-EP.pdf

Description:: MOSFET N-CH 600V 34A D2PAK

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Product details

Overview

STB42N60M2-EP from STMicroelectronics is an N-channel 600 V, 34 A MDmesh™ M2 EP Power MOSFET in D²PAK (TO-263) package, featuring 0.076 Ω typ. R_DS(on), 55 nC total gate charge, and 13–14.5 µJ turn-off energy at 400 V/2.5–5 A. It is engineered for high-frequency switching in industrial SMPS, PFC stages, and resonant converters operating above 150 kHz.

For engineers reviewing the STB42N60M2-EP datasheet, STB42N60M2-EP pinout, STB42N60M2-EP application, or STB42N60M2-EP equivalent, key selection criteria include avalanche ruggedness (800 mJ E_AS), low C_oss,eq (454 pF), Zener-protected gate, 150 °C max junction temperature, and D²PAK thermal resistance (0.50 °C/W j-case).

Technical Context

This MOSFET employs ST's MDmesh™ M2 EP enhanced performance technology with strip layout and optimized vertical structure to simultaneously reduce conduction loss and switching loss-particularly turn-off energy-without compromising voltage rating or avalanche capability. Its 600 V V_(BR)DSS and 15 V/ns diode recovery dv/dt rating support robust operation in hard-switched and resonant topologies.

The device integrates a Zener-protected gate and exhibits tightly controlled dynamic parameters: C_iss = 2370 pF, C_oss = 112 pF, and Cr_ss = 2.5 pF at V_DS = 100 V, enabling predictable gate drive design and reduced Miller-induced shoot-through risk in half-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	600 V - Sustains full rated blocking voltage before avalanche onset, enabling use in 400 V DC bus systems with margin.
R_DS(on) typ.	0.076 Ω @ V_GS = 10 V, I_D = 17 A - Delivers <1.2 W conduction loss at 34 A continuous drain current (T_C = 25 °C).
Q_g	55 nC - Enables fast, low-loss switching with moderate gate driver strength (e.g., 2 A peak); reduces gate drive power dissipation.
E_off	13–14.5 µJ @ V_DD = 400 V, I_D = 2.5–5 A - Confirmed low turn-off loss critical for >150 kHz operation in LLC and phase-shifted full-bridge converters.
C_oss,eq	454 pF - Equivalent output capacitance over 0–480 V range; determines resonant tank behavior and ZVS initiation voltage in soft-switching designs.
E_AS	800 mJ - Single-pulse avalanche energy at T_j = 25 °C; supports unclamped inductive switching reliability without external snubbers.
R_thj-case	0.50 °C/W - Junction-to-case thermal resistance enables 250 W power dissipation with modest heatsinking in D²PAK package.

Pinout & Package

D²PAK (TO-263) package: surface-mount, single-row 3-pin outline with exposed drain tab (pin 2) for thermal and electrical connection. Tab is electrically connected to drain (D). Standard JEDEC MO-211AC footprint.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≤±25 V gate-source voltage; Zener-protected against overvoltage transients.
2 (TAB/D)	Drain	Main high-side power terminal; electrically and thermally connected to exposed copper tab; must be soldered to PCB thermal pad.
3 (S)	Source	Power return path and gate reference; connects to low-side switch node or ground plane; defines local ground for gate drive loop.

Key Features

Feature	Design Value
Extremely low gate charge	55 nC total gate charge minimizes gate driver power and enables higher frequency operation with lower drive losses.
Optimized C_oss profile	112 pF C_oss and 454 pF C_oss,eq support reliable zero-voltage switching (ZVS) in resonant converters up to 300 kHz.
Very low turn-off switching losses	13–14.5 µJ E_off at 400 V/5 A reduces heat generation and improves efficiency in high-frequency hard-switched PFC and DC-DC stages.
100% avalanche tested	Each unit validated for 6 A repetitive avalanche current and 800 mJ single-pulse energy, ensuring robustness in inductive load switching.
Zener-protected gate	Integrated gate-body Zener clamps transient overvoltage to ±25 V, eliminating need for external gate protection components.

Applications

Industrial Switch-Mode Power Supplies

Active PFC Front-Ends

Use Scenario: Primary-side switching in 1–3 kW telecom and server PSUs operating at 200–300 kHz.

IC Role / Device Role / Timing Role: High-side main switch in LLC resonant half-bridge; handles 400 V DC input and delivers regulated 12 V/48 V output.

Use Value: Low C_oss,eq (454 pF) ensures reliable ZVS across full load range; 0.076 Ω R_DS(on) limits conduction loss to <1.2 W at full load.

Use Scenario: Boost switch in continuous conduction mode (CCM) PFC stage for 85–265 V AC input, 3.5 kW output.

IC Role / Device Role / Timing Role: Fast-switching boost transistor synchronized to line frequency; operates at 65–100 kHz with high duty-cycle variation.

Use Value: 14.5 µJ E_off at 5 A reduces switching loss by >35% vs. legacy 600 V MOSFETs; 150 °C T_jmax supports compact heatsink design.

Photovoltaic Inverters

High-Frequency Induction Heating

Use Scenario: DC-link switching in string inverters converting 600–1000 V PV array output to 230 V AC grid.

IC Role / Device Role / Timing Role: Unidirectional switch in H-bridge inverter leg; commutates at 16–20 kHz with sinusoidal PWM modulation.

Use Value: 800 mJ E_AS withstands inductive flyback during fault conditions; 15 V/ns diode dv/dt rating prevents false turn-on during fast voltage transitions.

Use Scenario: Half-bridge inverter driving 100–500 kHz resonant tank in domestic induction cooktops (3.3 kW).

IC Role / Device Role / Timing Role: High-frequency switching element in series-resonant topology; subjected to high di/dt (>200 A/µs) and reverse recovery stress.

Use Value: 438 ns t_rr and 9 µC Q_rr at 25 °C minimize body diode losses; Zener-protected gate survives gate ringing in high-dV/dt environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency 600 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP42N60M2-EP	Same die, TO-220 package; R_thj-case = 0.50 °C/W (same), but R_thj-amb = 50 °C/W vs. 62.5 °C/W for D²PAK.	Better natural-convection cooling; suited for through-hole prototyping or lower-density layouts where heatsink mounting is direct to case.	Select when mechanical mounting constraints favor TO-220 or when board-level thermal management relies on heatsink contact rather than PCB copper area.
IPP60R099C7XKSA1	Infineon CoolMOS™ C7; 650 V, 0.099 Ω, 47 A; Q_g = 42 nC, E_off = 11 µJ @ 400 V/5 A - lower gate charge but higher R_DS(on).	Higher current rating and lower E_off, but less avalanche ruggedness (E_AS = 520 mJ) and no integrated Zener protection.	Prefer for ultra-high-efficiency 250–500 kHz designs where gate drive optimization outweighs avalanche margin; requires external gate clamp.

Compared with STP42N60M2-EP and IPP60R099C7XKSA1, STB42N60M2-EP offers superior board-level thermal integration via D²PAK, guaranteed avalanche robustness, and built-in gate protection-making it optimal for space-constrained, high-reliability industrial converters where PCB thermal design is prioritized over mechanical mounting flexibility.

Availability

STB42N60M2-EP is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, active PFC front-ends, and photovoltaic inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STB42N60M2-EP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ M2 EP high-voltage power MOSFET product line, developed specifically for high-frequency, high-efficiency switching applications demanding low R_DS(on), low switching loss, and robust avalanche performance.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STB42N60M2-EP supports 22 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating from 34 A at 25 °C reflects thermal limitations of the D²PAK package under real-world heatsink conditions and ensures safe operation within SOA boundaries.

Does this MOSFET require external gate protection?

No. The STB42N60M2-EP integrates a Zener diode between gate and source, clamping gate-source voltage to ±25 V. This eliminates the need for external gate protection components in typical applications, provided gate drive circuitry respects the ±25 V absolute maximum rating and avoids excessive series inductance.

How does its C_oss,eq value impact ZVS operation in LLC converters?

With C_oss,eq = 454 pF over 0–480 V, the STB42N60M2-EP provides predictable resonant tank capacitance that enables reliable zero-voltage switching down to light loads. This value directly determines the minimum required magnetizing current to fully discharge C_oss before turn-on, supporting stable ZVS across 20–300 kHz operating range.

Is the D²PAK package lead-free and RoHS-compliant?

Yes. The STB42N60M2-EP is supplied in ECOPACK®2-compliant D²PAK packaging, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The device is halogen-free and qualifies for lead-free reflow soldering per J-STD-020D.3 moisture sensitivity level (MSL) 3.

STB42N60M2-EP Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M2-EP

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 34A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 87mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 55 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2370 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STB42N60M2-EP FAQ

1.How can I place an order for STB42N60M2-EP through Aetrix?

Please submit a Request for Quotation (RFQ) for STB42N60M2-EP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB42N60M2-EP reliable?

The price and inventory of STB42N60M2-EP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB42N60M2-EP is usually 5 days.

3.What payment methods are accepted for STB42N60M2-EP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB42N60M2-EP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB42N60M2-EP?

STB42N60M2-EP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB42N60M2-EP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB42N60M2-EP?

For technical support, including STB42N60M2-EP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB42N60M2-EP requirements.

6.How does Aetrix verify that STB42N60M2-EP is sourced from the original manufacturer or authorized distributors?

All STB42N60M2-EP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB42N60M2-EP meets industry standards.

7.What is the process for return or replacement of STB42N60M2-EP?

All STB42N60M2-EP units undergo pre-shipment inspection (PSI). If there is an issue with STB42N60M2-EP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB42N60M2-EP part is unused and in its original packaging.

Return procedure for STB42N60M2-EP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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