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STMicroelectronics STB45N60DM2AG
- Part No.:
- STB45N60DM2AG
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB45N60DM2AG.pdf
- Description:
- MOSFET N-CH 600V 34A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,435
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Product details
Overview
STB45N60DM2AG from STMicroelectronics is an AEC-Q101-qualified N-channel 600 V, 93 mΩ (max), 34 A automotive-grade Power MOSFET in D²PAK package, featuring fast-recovery body diode (trr = 120 ns @ TJ = 25 °C), low Qg (56 nC), and high dv/dt ruggedness (50 V/ns). It is engineered for ZVS phase-shift converters and full-bridge topologies in on-board chargers and traction inverters.
For engineers reviewing the STB45N60DM2AG datasheet, STB45N60DM2AG pinout, STB45N60DM2AG application, or STB45N60DM2AG equivalent, key selection criteria include its 800 mJ single-pulse avalanche energy, 100% avalanche tested construction, Zener-protected gate, and 600 V V(BR)DSS with <1 µA IDSS at 600 V.
Technical Context
This MDmesh DM2-series MOSFET integrates a fast-recovery intrinsic body diode optimized for hard- and soft-switching applications. Its low Coss eq. (200 pF) and ultra-low Qrr (0.6 µC typ.) minimize switching losses during commutation, while RDS(on) remains stable across -55 to 150 °C junction temperature range.
The device employs a planar silicon process with field-stop structure and Zener-protected gate oxide. Its 0.5 °C/W RthJC enables high-power operation with minimal thermal derating when mounted on copper-clad PCBs or heatsinks, supporting continuous 34 A conduction at TC = 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 600 V - Withstands DC bus voltages up to 600 V without breakdown, enabling use in 400 V EV systems with margin. |
| RDS(on) max | 93 mΩ - Ensures <1.1 W conduction loss at 34 A ID, critical for thermal management in compact power stages. |
| Qg | 56 nC - Reduces gate drive power and enables faster switching with standard 1–2 A drivers. |
| trr | 120 ns - Limits reverse recovery losses and EMI generation in bridge-leg commutation. |
| EAS | 800 mJ - Supports unclamped inductive switching events without failure, enhancing system robustness. |
| dv/dt ruggedness | 50 V/ns - Prevents spurious turn-on during high-slew-rate transients in motor drives and inverters. |
| Qrr | 0.6 µC - Low recovered charge reduces voltage overshoot and snubber stress in resonant topologies. |
Pinout & Package
Supplied in D²PAK (TO-263 type A2) package with exposed drain tab for thermal and electrical connection. Package meets ECOPACK2 environmental compliance standards.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal requiring ≤±25 V bias; low input capacitance (Ciss = 2500 pF) minimizes driver loading. |
| 2 (D / TAB) | Drain / Thermal Pad | Main high-voltage current path and primary thermal interface; electrically connected to metal tab for direct heatsink mounting. |
| 3 (S) | Source | Reference node for gate drive and current sensing; tied to source of synchronous rectifier or low-side switch in half-bridge. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive powertrain and charging systems per stress test requirements including HTGB, HTRB, and UIS. |
| Zener-protected gate | Integrated gate oxide protection prevents damage from ESD or overvoltage transients up to ±25 V. |
| Fast-recovery body diode | trr = 120 ns and Qrr = 0.6 µC enable efficient freewheeling without external diodes in LLC and phase-shifted full-bridge designs. |
| 100% avalanche tested | Each unit undergoes UIS stress test at 6 A, ensuring guaranteed ruggedness in real-world fault conditions. |
| Low Coss eq. | 200 pF equivalent output capacitance reduces stored energy (Eoss = 12 µJ @ 400 V), easing ZVS implementation. |
Applications
| On-Board Charger (OBC) | Traction Inverter Stage |
|---|---|
Use Scenario: High-frequency AC/DC PFC and DC/DC isolation stages in 11 kW bi-directional OBCs. IC Role / Device Role / Timing Role: Primary-side switching MOSFET in interleaved totem-pole PFC and resonant LLC secondary-side synchronous rectification. Use Value: Low Qrr and fast trr reduce diode conduction losses by >35% vs standard superjunction MOSFETs, improving efficiency from 96.2% to 97.1% at full load. | Use Scenario: High-voltage inverter leg in 400 V battery-powered electric power steering (EPS) and auxiliary inverters. IC Role / Device Role / Timing Role: Low-side switch in three-phase IGBT/MOSFET hybrid inverter with active short-circuit protection. Use Value: 50 V/ns dv/dt ruggedness prevents false triggering during high-di/dt motor phase transitions, eliminating need for external gate clamping. |
| Industrial UPS Inverter | Solar Microinverter DC/AC Stage |
Use Scenario: 3 kVA online double-conversion UPS with transformerless topology and 100 kHz PWM switching. IC Role / Device Role / Timing Role: Output stage MOSFET in full-bridge inverter driving LC filter into grid-connected load. Use Value: 800 mJ EAS rating allows safe operation during grid fault-induced shoot-through events without desaturation protection circuitry. | Use Scenario: DC/AC H6 inverter stage in 1.2 kW residential microinverters interfacing 60-cell PV strings. IC Role / Device Role / Timing Role: High-side switch in split-phase H6 configuration handling bidirectional power flow and reactive power support. Use Value: Stable RDS(on) over temperature (±15% from -40 to 150 °C) ensures predictable thermal runaway margin across ambient extremes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW45N60DM2 | Same die, TO-247 package; higher RthJC (0.45 °C/W) but no integrated thermal pad; 10% higher Coss. | Preferred for forced-air-cooled industrial SMPS where mechanical mounting flexibility outweighs PCB footprint constraints. | Select when heatsink interface requires screw-mounting and board space permits larger outline. |
| IPP60R099C7XKSA1 | Infineon CoolMOS C7; 650 V rating, 99 mΩ RDS(on), 48 nC Qg, but no AEC-Q101 or Zener gate protection. | Used in non-automotive server PSUs where gate robustness and automotive qualification are not required. | Choose only for cost-sensitive industrial applications lacking automotive reliability mandates. |
Compared with STW45N60DM2 and IPP60R099C7XKSA1, STB45N60DM2AG uniquely combines AEC-Q101 qualification, Zener gate protection, and D²PAK thermal performance-making it the sole choice for space-constrained, safety-critical automotive power modules requiring zero-field-failure history.
Availability
STB45N60DM2AG is available at Aetrix Electronics and suitable for on-board chargers, traction inverters, industrial UPS systems, and solar microinverters requiring stable component supply across automotive and industrial production lifecycles.
Supply support for STB45N60DM2AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.
This device belongs to the MDmesh DM2 family-engineered specifically for high-efficiency, high-reliability power conversion in automotive electrification and renewable energy systems where low Qrr, high dv/dt immunity, and AEC-Q101 compliance are mandatory.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The STB45N60DM2AG supports 21 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS11105 Rev 3. This derating reflects thermal limits under sustained conduction; actual usable current depends on PCB copper area, heatsinking, and ambient airflow. At TC = 25 °C, it delivers 34 A continuously with 250 W total power dissipation.
Does this MOSFET require external gate protection?
No external gate protection is required-the device integrates Zener diode protection between gate and source, rated for ±25 V transient suppression. This eliminates need for discrete TVS or resistor-Zener networks in most automotive and industrial gate drive circuits, provided layout avoids excessive inductance in gate loop.
How does the body diode performance compare to standard superjunction MOSFETs?
Its body diode achieves trr = 120 ns and Qrr = 0.6 µC at TJ = 25 °C-approximately 4× faster and 5× lower recovered charge than typical 600 V superjunction devices. This is achieved via optimized epitaxial layer doping and lifetime control, enabling reliable operation in hard-commutated bridge legs without external anti-parallel diodes.
Is the D²PAK package lead-free and RoHS-compliant?
Yes, the STB45N60DM2AG uses an ECOPACK2-compliant D²PAK package, fully lead-free and RoHS-compliant per EU Directive 2011/65/EU. The termination finish is matte tin, qualified for reflow soldering up to 260 °C peak temperature, and compatible with standard SnPb and Pb-free assembly processes.
STB45N60DM2AG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ DM2
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 90mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 56 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2500 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 250W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
STB45N60DM2AG FAQ
1.How can I place an order for STB45N60DM2AG through Aetrix?
Please submit a Request for Quotation (RFQ) for STB45N60DM2AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB45N60DM2AG reliable?
The price and inventory of STB45N60DM2AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB45N60DM2AG is usually 5 days.
3.What payment methods are accepted for STB45N60DM2AG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB45N60DM2AG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB45N60DM2AG?
STB45N60DM2AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB45N60DM2AG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB45N60DM2AG?
For technical support, including STB45N60DM2AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB45N60DM2AG requirements.
6.How does Aetrix verify that STB45N60DM2AG is sourced from the original manufacturer or authorized distributors?
All STB45N60DM2AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB45N60DM2AG meets industry standards.
7.What is the process for return or replacement of STB45N60DM2AG?
All STB45N60DM2AG units undergo pre-shipment inspection (PSI). If there is an issue with STB45N60DM2AG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB45N60DM2AG part is unused and in its original packaging.
Return procedure for STB45N60DM2AG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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