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STMicroelectronics STB45NF06
- Part No.:
- STB45NF06
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB45NF06.pdf
- Description:
- MOSFET N-CH 60V 38A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,527
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Product details
Overview
STB45NF06 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in D2PAK package, rated for 60 V drain-source voltage, 38 A continuous drain current at 25°C, and 0.023 Ω typical RDS(on) at VGS = 10 V. It delivers rugged avalanche performance (260 mJ single-pulse EAS) and high dv/dt immunity (8 V/ns), making it suitable for hard-switched DC-DC converters and motor drive half-bridges.
For engineers reviewing the STB45NF06 datasheet, STB45NF06 pinout, STB45NF06 application, or STB45NF06 equivalent, key selection criteria include its 1.87 °C/W junction-to-case thermal resistance, 152 A pulsed drain current capability, gate threshold voltage range (2–4 V), and D2PAK footprint compatibility with high-power PCB layouts requiring >35 W dissipation.
Technical Context
This MOSFET employs ST's STripFET™ II strip-based process, enabling high cell density and low specific on-resistance. Its planar gate structure supports standard 10 V gate drive and exhibits stable transconductance (18 S typ.) across temperature.
The device integrates a fast-recovery source-drain diode (trr = 65 ns, Qrr = 150 nC) with controlled reverse recovery behavior under 100 A/µs di/dt stress. Safe operating area (SOA) is defined up to 100 µs pulse width at 60 V, supporting unclamped inductive switching.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in 48 V systems. |
| RDS(on) max | 0.028 Ω - Confirmed worst-case on-resistance at 10 V gate drive and 25°C; determines conduction loss in high-current paths. |
| ID cont @ TC=25°C | 38 A - Continuous drain current rating with case temperature maintained at 25°C; requires heatsinking for sustained operation. |
| EAS | 260 mJ - Single-pulse avalanche energy at 40 V VDD, 19 A IAR, 25°C starting Tj; validates robustness in inductive turn-off faults. |
| Qg | 58 nC - Total gate charge at VDD = 48 V, ID = 34 A; directly impacts gate driver power and switching speed trade-offs. |
| tr/tf | 50 ns / 10 ns - Rise/fall times measured with 4.7 Ω gate resistor; enables <100 kHz hard-switching with low switching loss. |
| Rthj-case | 1.87 °C/W - Junction-to-case thermal resistance; defines minimum heatsink requirement for 80 W PTOT dissipation. |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. Three terminals: Gate (G), Drain (D), Source (S). Mounting requires soldering the drain pad to ≥1 in² 2 oz Cu PCB area for optimal thermal performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal; accepts 10 V logic-level drive; 100 nA leakage ensures low static power consumption. |
| Pin 2 (D) | Drain | Main high-side power terminal; electrically and thermally connected to exposed metal tab; must be isolated from other layers unless used as ground return. |
| Pin 3 (S) | Source | Power return path and reference for gate drive; connects to low-side switch node or system ground; carries full load current. |
Key Features
| Feature | Design Value |
|---|---|
| STripFET™ II process | Enables 0.023 Ω RDS(on) in D2PAK without trench or superjunction complexity; improves manufacturing yield and parameter consistency. |
| 100% avalanche tested | Each unit validated to withstand single-pulse EAS stress per JEDEC JESD22-A110; eliminates field failure risk from inductive kickback. |
| High dv/dt immunity | 8 V/ns rated slope prevents spurious turn-on during fast voltage transients in bridge configurations. |
| Standard threshold drive | VGS(th) = 2–4 V range ensures compatibility with 5 V and 3.3 V microcontrollers without level-shifting circuitry. |
| Fast body diode | 65 ns trr and 5 A IRRM support synchronous rectification in buck converters and freewheeling in motor drives. |
Applications
| DC-DC Converters | Motor Drive Half-Bridge |
|---|---|
|
Use Scenario: High-efficiency 48 V input to 12 V output buck converter in telecom power supplies. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 200 kHz with 50 ns rise time. Use Value: 0.023 Ω RDS(on) reduces conduction loss by >30% vs. comparable 0.035 Ω devices at 25 A load current. |
Use Scenario: Low-side switch in 24 V brushed DC motor H-bridge for industrial actuation. IC Role / Device Role / Timing Role: PWM-controlled power stage handling 30 A peak current with 152 A pulsed capability. Use Value: 260 mJ EAS rating absorbs inductive energy during rapid direction reversal without external snubbers. |
| Uninterruptible Power Supplies | LED Driver Switching Stage |
|
Use Scenario: Battery backup inverter stage converting 48 V DC to 230 V AC via full-bridge topology. IC Role / Device Role / Timing Role: Hard-switched leg switch with 60 V VDSS margin over nominal bus voltage. Use Value: 8 V/ns dv/dt immunity prevents false triggering during zero-crossing transitions in transformer-coupled outputs. |
Use Scenario: Constant-current boost LED driver for street lighting with 36 V string voltage. IC Role / Device Role / Timing Role: Main switching transistor cycling at 100–500 kHz with 58 nC Qg driving requirement. Use Value: 1.87 °C/W Rthj-case allows direct mounting to aluminum heatsink, eliminating need for thermal interface material in compact enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V Power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP45NF06 | Identical silicon die but TO-220 package; Rthj-case = 1.5 °C/W (lower), no exposed drain pad. | Preferred for prototyping or low-volume through-hole assembly; unsuitable for automated SMT lines. | Select when manual heatsink mounting is acceptable and board space permits larger footprint. |
| IRFZ44N | Higher RDS(on) (0.028 Ω min, 0.040 Ω max); lower EAS (160 mJ); same D2PAK-3 package outline. | Marginally adequate for 30 A continuous loads; requires derating in high-temp environments. | Choose only if cost sensitivity outweighs thermal and avalanche performance requirements. |
Compared with STP45NF06 and IRFZ44N, STB45NF06 offers superior thermal performance in SMT production, guaranteed avalanche ruggedness, and tighter RDS(on) distribution-critical for parallel operation and high-reliability industrial inverters.
Availability
STB45NF06 is available at Aetrix Electronics and suitable for DC-DC converters, motor drive half-bridges, and uninterruptible power supplies requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.
Supply support for STB45NF06 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.
STB45NF06 belongs to the STripFET™ II Power MOSFET product line, engineered specifically for high-current, high-voltage switching in industrial motor controls and power conversion where avalanche robustness and thermal efficiency are critical.
FAQ
What is the maximum safe operating temperature for STB45NF06?
The STB45NF06 has a maximum junction temperature (TJ) of 175°C and a storage temperature range of –55°C to 175°C. For reliable long-term operation, junction temperature should be kept below 150°C under continuous load, using the 1.87 °C/W Rthj-case value and measured case temperature to calculate thermal margin.
Can STB45NF06 be used in parallel configurations?
Yes-its positive temperature coefficient for RDS(on) (confirmed in Figure 11 of the datasheet) ensures current sharing stability across multiple devices. Designers must match gate drive impedance and layout symmetry, and verify total gate charge (58 nC) does not overload the driver stage when paralleling more than two units.
Does STB45NF06 require a gate resistor for protection?
A gate resistor is mandatory to control dV/dt and prevent oscillation. The datasheet specifies 4.7 Ω for switching time measurements; values between 2.2 Ω and 10 Ω are typical. Lower values increase switching speed but raise EMI and gate driver stress; higher values reduce losses but extend transition times and increase switching loss.
Is STB45NF06 RoHS-compliant and halogen-free?
Yes-STB45NF06 is manufactured in ST's ECOPACK®-compliant D2PAK package, meeting RoHS Directive 2011/65/EU and halogen-free requirements per IEC 61249-2-21. Full compliance documentation, including material declarations and test reports, is available on ST's official website under ECOPACK® grade definitions.
STB45NF06 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- STripFET™ II
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 28mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 58 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 980 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 80W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
STB45NF06 FAQ
1.How can I place an order for STB45NF06 through Aetrix?
Please submit a Request for Quotation (RFQ) for STB45NF06 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB45NF06 reliable?
The price and inventory of STB45NF06 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB45NF06 is usually 5 days.
3.What payment methods are accepted for STB45NF06?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB45NF06 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB45NF06?
STB45NF06 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB45NF06 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB45NF06?
For technical support, including STB45NF06 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB45NF06 requirements.
6.How does Aetrix verify that STB45NF06 is sourced from the original manufacturer or authorized distributors?
All STB45NF06 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB45NF06 meets industry standards.
7.What is the process for return or replacement of STB45NF06?
All STB45NF06 units undergo pre-shipment inspection (PSI). If there is an issue with STB45NF06, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB45NF06 part is unused and in its original packaging.
Return procedure for STB45NF06:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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