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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB46N60M6

Name: STB46N60M6
Brand: STMicroelectronics
SKU: STB46N60M6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB46N60M6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB46N60M6.pdf

Description:: MOSFET N-CH 600V 36A D2PAK

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Product details

Overview

STB46N60M6 from STMicroelectronics is an N-channel 600 V, 36 A MDmesh M6 superjunction power MOSFET in D²PAK (TO-263) package, featuring 68 mΩ typ. R_DS(on), 53.5 nC total gate charge, and 100% avalanche-tested ruggedness. It delivers low switching losses and high dv/dt ruggedness (100 V/ns) for high-efficiency LLC and boost PFC converters operating at 100–500 kHz.

For engineers reviewing the STB46N60M6 datasheet, STB46N60M6 pinout, STB46N60M6 application, or STB46N60M6 equivalent, key selection criteria include R_DS(on) vs. temperature stability, C_oss eq. (339 pF), unclamped inductive switching capability (E_AS = 760 mJ), and Zener-protected gate robustness under ±25 V stress.

Technical Context

This MOSFET employs ST's MDmesh M6 silicon technology, optimized for high-voltage switching with reduced specific on-resistance and enhanced dynamic performance. Its 1.6 Ω intrinsic gate resistance and low Crss (3.7 pF) enable precise gate drive control and minimized Miller-induced turn-on risk in hard-switched topologies.

The device integrates a fast-recovery body diode (t_rr = 267 ns @ 25 °C, Q_rr = 2.8 µC) with soft recovery characteristics, supporting zero-voltage switching (ZVS) in resonant converters. Thermal design is enabled by R_thJC = 0.5 °C/W and validated SOA up to 10 ms at 300 V.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Supports 400 V DC-link operation with 50 V margin for transient overvoltage in industrial PFC stages.
R_DS(on) max	80 mΩ - Ensures ≤1.15 W conduction loss at 36 A continuous drain current (T_C = 25 °C).
Q_g	53.5 nC - Enables efficient 100–300 kHz switching with moderate gate driver power (e.g., 1–2 W @ 200 kHz).
E_AS	760 mJ - Guarantees single-pulse unclamped inductive energy handling without failure at T_J = 25 °C.
t_r/t_f	15.5 ns / 8.5 ns - Supports fast edge rates while maintaining EMI control via external gate resistor tuning.
R_thJC	0.5 °C/W - Allows 250 W dissipation with ≤125 °C junction rise above case, enabling compact heatsink integration.
C_oss eq.	339 pF - Defines output capacitance energy storage (E_OSS = 12 µJ @ 480 V), critical for ZVS timing in LLC designs.

Pinout & Package

D²PAK (TO-263) package with exposed drain tab for thermal and electrical connection; 3-pin configuration (Drain, Gate, Source); standard JEDEC outline per Figure 19 (DS12965 Rev 3, p.8).

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main power drain terminal	Electrically and thermally connected to PCB copper pour; carries full load current and dissipates heat directly to heatsink.
Pin 1 (Gate)	Control input	Low-impedance gate node requiring <1.6 Ω series resistance to damp oscillation; Zener-protected against ±25 V transients.
Pin 3 (Source)	Reference return path	Common source node for gate drive reference and current sensing; must be low-inductance layout to avoid shoot-through risk.

Key Features

Feature	Design Value
MDmesh M6 silicon process	Reduces R_DS(on) per die area by ~25% vs. prior M5 generation, enabling higher power density in same D²PAK footprint.
100% avalanche tested	Each unit validated for repetitive/unrepetitive avalanche stress (I_AR = 5.2 A, E_AS = 760 mJ), ensuring field reliability in inductive fault conditions.
Zener-protected gate	Integrated gate oxide protection clamps V_GS to ±25 V, eliminating need for external TVS in most gate drive circuits.
Low C_iss/C_oss ratio	C_iss = 2340 pF, C_oss = 147 pF → Crss/Ciss = 0.16%, minimizing Miller feedback and improving hard-switching stability.
Soft-recovery body diode	Q_rr = 2.8 µC and I_RRM = 20.8 A at 25 °C enable low-noise commutation in bridge-leg configurations without snubbers.

Applications

Server Power Supply

Industrial PFC Stage

Use Scenario: Primary-side switch in 3.3 kW continuous conduction mode (CCM) boost PFC front-end.

IC Role / Device Role / Timing Role: High-voltage switching element controlling input current waveform alignment with AC line voltage.

Use Value: 68 mΩ R_DS(on) and 339 pF C_oss eq. enable >98.2% efficiency at 230 VAC full load, reducing thermal derating needs.

Use Scenario: Active clamp switch in 1.5 kW telecom rectifier with 400 V DC bus.

IC Role / Device Role / Timing Role: Fast-turning, avalanche-rugged switch managing clamp energy transfer during dead-time intervals.

Use Value: 100 V/ns dv/dt ruggedness and 760 mJ E_AS prevent failure during voltage overshoot events in high-di/dt clamp loops.

LLC Resonant Converter

Solar Inverter DC-DC Stage

Use Scenario: Half-bridge primary switch in 2.5 kW server LLC resonant converter operating at 250 kHz.

IC Role / Device Role / Timing Role: ZVS-capable power switch synchronized to resonant tank zero-crossings for minimal switching loss.

Use Value: Low Q_gd/Q_gs ratio (23.5/15.5 nC) ensures clean turn-off transition and tight dead-time control across temperature.

Use Scenario: DC-DC isolation stage switch in 5 kW string inverter with 1000 V PV input.

IC Role / Device Role / Timing Role: High-reliability main switch handling intermittent overload and grid-fault transients.

Use Value: 150 °C maximum junction rating and -55 °C minimum storage temperature support outdoor deployment in desert climates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R099C7XKSA1	R_DS(on) = 99 mΩ (typ), Q_g = 45 nC, C_oss eq. = 220 pF, no Zener gate protection	Higher conduction loss but lower gate charge enables faster switching in low-duty-cycle ZVS designs	Prefer when gate drive power budget is constrained and avalanche testing is handled externally
IXTH50N60L2	R_DS(on) = 75 mΩ (typ), Q_g = 105 nC, t_rr = 420 ns, no integrated Zener, TO-247 package	Higher gate charge increases driver complexity; slower diode recovery limits resonant frequency ceiling	Choose only if TO-247 mechanical fit is mandatory and thermal interface allows R_thJC = 0.45 °C/W

Compared with IPP60R099C7XKSA1 and IXTH50N60L2, STB46N60M6 offers the best balance of low R_DS(on), controlled Q_g, and integrated gate protection-making it optimal for space-constrained, high-reliability PFC and LLC designs where board-level protection overhead must be minimized.

Availability

STB46N60M6 is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, and solar inverter DC-DC stages requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STB46N60M6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

STB46N60M6 belongs to the MDmesh M6 superjunction MOSFET product line, engineered specifically for high-efficiency, high-frequency AC-DC and DC-DC conversion in enterprise and renewable energy systems.

FAQ

What is the maximum recommended gate resistor value for reliable switching at 300 kHz?

A 4.7 Ω gate resistor is validated in the datasheet test circuit (Figure 13) for 300 kHz operation with 18 A load. Using >10 Ω increases turn-on delay (t_d(on)) beyond 25 ns and risks incomplete Miller plateau discharge, potentially causing shoot-through in half-bridge configurations. For 300 kHz, 3.3–5.6 Ω is the optimal range.

Does the STB46N60M6 require external gate protection diodes?

No. The device integrates a bidirectional Zener clamp between gate and source, rated for ±25 V, which protects the gate oxide from ESD and drive-stage transients. External TVS devices are unnecessary unless system-level surge immunity exceeds IEC 61000-4-5 Level 4 (4 kV line-to-ground).

How does the body diode performance compare at 150 °C junction temperature?

At T_J = 150 °C, reverse recovery time increases to 440 ns (vs. 267 ns at 25 °C), and Q_rr rises to 5.8 µC (vs. 2.8 µC). Forward voltage drops slightly to ~1.5 V at 36 A. These shifts are fully characterized in Table 7 and Figure 12, confirming usable soft-recovery behavior across full operating range.

Can STB46N60M6 replace STB36N60DM6 in existing designs?

Yes, with minor layout review: both use D²PAK package and share identical pinout, but STB46N60M6 has 13% lower R_DS(on) (68 mΩ vs. 78 mΩ typ.) and 12% higher Q_g (53.5 nC vs. 47.8 nC). Gate drive strength must be verified for 10–15% higher peak current demand during turn-on.

STB46N60M6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 36A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 80mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 53.5 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2340 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STB46N60M6 FAQ

1.How can I place an order for STB46N60M6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB46N60M6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB46N60M6 reliable?

The price and inventory of STB46N60M6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB46N60M6 is usually 5 days.

3.What payment methods are accepted for STB46N60M6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB46N60M6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB46N60M6?

STB46N60M6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB46N60M6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB46N60M6?

For technical support, including STB46N60M6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB46N60M6 requirements.

6.How does Aetrix verify that STB46N60M6 is sourced from the original manufacturer or authorized distributors?

All STB46N60M6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB46N60M6 meets industry standards.

7.What is the process for return or replacement of STB46N60M6?

All STB46N60M6 units undergo pre-shipment inspection (PSI). If there is an issue with STB46N60M6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB46N60M6 part is unused and in its original packaging.

Return procedure for STB46N60M6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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