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STMicroelectronics STB47N60DM6AG
- Part No.:
- STB47N60DM6AG
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB47N60DM6AG.pdf
- Description:
- AUTOMOTIVE-GRADE N-CHANNEL 600 V
- Quantity:
- Payment:
- Shipping:
Inventory:889
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Product details
Overview
STB47N60DM6AG from STMicroelectronics is an AEC-Q101 qualified N-channel 600 V Power MOSFET in D²PAK package, featuring 70 mΩ typ. RDS(on), 36 A continuous drain current at TC = 25 °C, and fast-recovery body diode with 115 ns trr at 25 °C - deployed in high-efficiency ZVS phase-shift converters and bridge topologies.
For engineers reviewing the STB47N60DM6AG datasheet, STB47N60DM6AG pinout, STB47N60DM6AG application, or STB47N60DM6AG equivalent, key selection criteria include avalanche ruggedness (700 mJ EAS), dv/dt immunity (100 V/ns), low Qgd/Qg ratio (31/55 nC), and automotive-grade qualification for reliable operation in harsh environments.
Technical Context
This MDmesh DM6-series MOSFET integrates a Zener-protected gate and optimized charge distribution to achieve ultra-low Qrr (0.54 µC) and Coss,eq (416 pF), enabling efficient hard-switching and resonant-mode operation. Its 1.6 Ω intrinsic gate resistance and 2350 pF Ciss support precise gate drive timing control in high-frequency power stages.
The device delivers extreme dv/dt ruggedness (100 V/ns) and 100% unclamped inductive switching (UIS) tested to 7 A IAR, with thermal resistance RthJC = 0.5 °C/W ensuring stable junction temperature management under sustained 36 A conduction in automotive traction inverters and industrial SMPS.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - supports 480 V DC bus designs with 25% voltage margin for transient overvoltage handling |
| RDS(on) max | 80 mΩ - enables <1.15 W conduction loss at 36 A, critical for thermally constrained automotive modules |
| Qg | 55 nC - reduces gate driver power demand and switching transition time in 100–500 kHz converters |
| trr | 115 ns at 25 °C - minimizes reverse recovery losses in synchronous rectification and LLC resonant circuits |
| EAS | 700 mJ - ensures robustness against inductive energy spikes without external snubbers in motor drives |
| dv/dt ruggedness | 100 V/ns - prevents spurious turn-on during high-slew-rate commutation in half-bridge configurations |
| RthJC | 0.5 °C/W - allows direct heatsink mounting for >200 W dissipation capability in compact D²PAK footprint |
Pinout & Package
D²PAK (TO-263) package with exposed drain tab for thermal and electrical connection; 3-pin configuration optimized for high-current PCB mounting and heatsink interface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | High-impedance control input requiring ≤10 V drive; Zener-protected against ±25 V transients |
| 2 (TAB / D) | Drain (exposed tab) | Main high-voltage power path; electrically and thermally connected to heatsink via soldered tab |
| 3 (S) | Source | Power return and reference node for gate drive; forms low-inductance loop with gate driver ground |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive powertrain applications including 125 °C junction operation and humidity testing |
| Fast-recovery body diode | 115 ns trr and 0.54 µC Qrr at 25 °C enable efficient freewheeling without external diodes in buck converters |
| Low gate charge ratio | Qgd/Qg = 56% - improves Miller immunity and reduces risk of shoot-through in bridge legs |
| 100% avalanche tested | Each unit validated for single-pulse UIS stress up to 700 mJ, eliminating batch-level reliability uncertainty |
| Zener-protected gate | Integrated gate oxide protection clamps VGS to ±25 V, removing need for external TVS in gate drive networks |
Applications
| Automotive On-Board Charger (OBC) | Industrial Phase-Shifted Full-Bridge SMPS |
|---|---|
Use Scenario: Bidirectional AC/DC conversion in 6.6 kW EV charging systems operating at 100–200 kHz switching frequency. IC Role / Device Role / Timing Role: High-side switch in active clamp forward topology, handling 400 V DC link and 36 A peak current. Use Value: Low Qrr and fast trr reduce body diode conduction loss by >40% vs prior-generation MDmesh devices, improving OBC efficiency from 94.2% to 95.1%. |
Use Scenario: Primary-side switching in telecom rectifiers delivering 3 kW at 48 V output with ZVS operation. IC Role / Device Role / Timing Role: Synchronous rectifier and main switch in phase-shifted full-bridge, leveraging low Coss,eq for soft switching. Use Value: 416 pF Coss,eq enables reliable ZVS down to 50% load, reducing switching loss by 33% compared to standard 600 V MOSFETs. |
| Renewable Energy Solar Inverter | Motor Drive Half-Bridge Module |
Use Scenario: DC-link switching in string inverters with 1000 V PV input and transformerless topology. IC Role / Device Role / Timing Role: Upper-leg switch in three-level NPC configuration, subjected to 600 V blocking and repetitive UIS events. Use Value: 100 V/ns dv/dt ruggedness prevents false triggering during rapid bus voltage transitions, eliminating need for gate resistors >10 Ω. |
Use Scenario: 7.5 kW servo drive with 20 kHz PWM and regenerative braking in factory automation. IC Role / Device Role / Timing Role: Low-side switch managing 36 A continuous current and 137 A pulsed regeneration current via body diode. Use Value: 1.6 V VSD at 36 A and 115 ns trr cut freewheeling loss by 28% versus standard trench MOSFETs, lowering heatsink size by 35%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW48N60M2 | Higher RDS(on) (90 mΩ), higher Qg (72 nC), no AEC-Q101 qualification | Lacks automotive qualification and has 22% higher conduction loss at 36 A | Select when cost sensitivity outweighs automotive compliance and efficiency targets |
| IXFH40N60P | Slower trr (250 ns), no integrated Zener gate protection, higher Ciss (3100 pF) | Requires external gate TVS and exhibits 117% higher reverse recovery loss in hard-switched PFC | Prefer only in non-automotive industrial SMPS where gate drive simplicity is prioritized over loss optimization |
Compared with STW48N60M2 and IXFH40N60P, STB47N60DM6AG delivers superior efficiency in ZVS topologies due to its lower Qrr and Coss,eq, while its AEC-Q101 rating and Zener gate protection provide design assurance unattainable with either alternative in automotive or mission-critical industrial use cases.
Availability
STB47N60DM6AG is available at Aetrix Electronics and suitable for automotive on-board chargers, industrial phase-shifted full-bridge SMPS, and renewable energy solar inverters requiring stable component supply across extended product lifecycles.
Supply support for STB47N60DM6AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.
This device belongs to the MDmesh DM6 series - engineered specifically for high-efficiency, high-reliability 600 V power conversion in automotive traction, industrial motor drives, and renewable energy systems.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The STB47N60DM6AG supports 23 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS12070 Rev 5. This derating reflects thermal limits imposed by RthJC = 0.5 °C/W and maximum TJ = 150 °C, requiring adequate heatsinking for sustained operation above 25 °C ambient.
Does this MOSFET require an external gate resistor for safe operation?
No external gate resistor is required for basic functionality due to its 1.6 Ω intrinsic gate resistance and Zener-protected gate structure. However, a 5–10 Ω external resistor is recommended to dampen ringing in high-di/dt applications such as phase-shifted full-bridge converters operating above 150 kHz.
How does the body diode performance compare to discrete Schottky alternatives?
The integrated body diode achieves 115 ns trr and 1.6 V VSD at 36 A - outperforming most 600 V discrete Schottkys in reverse recovery speed while matching forward voltage. Unlike Schottkys, it withstands 600 V blocking and operates reliably up to 150 °C junction temperature without thermal runaway.
Is the D²PAK package lead-free and RoHS compliant?
Yes, the STB47N60DM6AG uses an ECOPACK2-compliant D²PAK package with lead-free terminations and halogen-free molding compound, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements as confirmed in Section 4 of DS12070 Rev 5.
STB47N60DM6AG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ DM6
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 80mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id:
- 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 55 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2350 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 250W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
STB47N60DM6AG FAQ
1.How can I place an order for STB47N60DM6AG through Aetrix?
Please submit a Request for Quotation (RFQ) for STB47N60DM6AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB47N60DM6AG reliable?
The price and inventory of STB47N60DM6AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB47N60DM6AG is usually 5 days.
3.What payment methods are accepted for STB47N60DM6AG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB47N60DM6AG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB47N60DM6AG?
STB47N60DM6AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB47N60DM6AG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB47N60DM6AG?
For technical support, including STB47N60DM6AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB47N60DM6AG requirements.
6.How does Aetrix verify that STB47N60DM6AG is sourced from the original manufacturer or authorized distributors?
All STB47N60DM6AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB47N60DM6AG meets industry standards.
7.What is the process for return or replacement of STB47N60DM6AG?
All STB47N60DM6AG units undergo pre-shipment inspection (PSI). If there is an issue with STB47N60DM6AG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB47N60DM6AG part is unused and in its original packaging.
Return procedure for STB47N60DM6AG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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