Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB4N62K3

Name: STB4N62K3
Brand: STMicroelectronics
SKU: STB4N62K3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STB4N62K3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB4N62K3.pdf

Description:: MOSFET N-CH 620V 3.8A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:993

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STB4N62K3 from STMicroelectronics is an N-channel 620 V, 1.7 Ω typ. R_DS(on), 3.8 A SuperMESH3™ Power MOSFET in D²PAK (TO-263) package, designed for high-voltage switching in offline SMPS, AC-DC adapters, and LED drivers. It features 100% avalanche testing, 12 V/ns dv/dt capability, and integrated gate-source Zener protection at 30 V.

For engineers reviewing the STB4N62K3 datasheet, STB4N62K3 pinout, STB4N62K3 application, or STB4N62K3 equivalent, key selection criteria include its 620 V V_DS, low 22 nC total gate charge, 115 mJ single-pulse avalanche energy, and D²PAK thermal resistance of 1.79 °C/W - critical for high-reliability flyback and resonant converter designs.

Technical Context

This device employs ST's enhanced SuperMESH3™ vertical structure to achieve ultra-low on-resistance while maintaining robust dynamic performance. Its minimized gate charge (22 nC) and low output capacitance (C_oss = 42 pF, C_oss,eq = 27 pF) reduce switching losses in hard-switched topologies operating up to 100 kHz.

The built-in back-to-back Zener diodes provide intrinsic ±30 V gate-source clamping, eliminating external protection components. Diode reverse recovery is optimized with t_rr = 220 ns and Q_rr = 1.4 µC at T_j = 25 °C, enabling stable operation in discontinuous conduction mode (DCM) flyback converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	620 V - supports primary-side switching in universal-input (85–265 VAC) offline power supplies without derating.
R_DS(on) max	2 Ω @ V_GS = 10 V, I_D = 1.9 A - ensures <1.4 W conduction loss at full 3.8 A continuous current (T_C = 25 °C).
Q_g	22 nC - enables efficient gate drive with standard 1-A peak drivers and reduces switching transition time.
E_AS	115 mJ - withstands unclamped inductive switching events in flyback and forward converters without failure.
t_r/t_f	9 ns / 19 ns - supports fast turn-on/turn-off for high-frequency operation while limiting EMI generation.
R_thj-case	1.79 °C/W - allows 70 W dissipation with ≤127 °C junction rise above 25 °C case temperature.
V_(BR)GSO	30 V - provides reliable gate overvoltage protection during layout-induced transients or hot-swap events.

Pinout & Package

D²PAK (TO-263) package with exposed drain tab for direct heatsink mounting; thermally enhanced plastic surface-mount outline measuring 10.0 × 15.5 mm footprint and 4.6 mm height.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main power drain terminal	Electrically connected to internal die drain; serves as primary thermal path to heatsink; must be isolated from PCB ground unless system design requires common-drain topology.
Pin 1 (Gate)	Control input	High-impedance MOS gate requiring low-inductance routing; driven by dedicated gate driver IC or discrete push-pull stage to ensure clean 10 V switching.
Pin 3 (Source)	Power return reference	Common source node for load current return; forms reference for gate drive voltage; must maintain low-impedance connection to power ground plane.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees ruggedness against unclamped inductive energy in flyback snubberless designs without external TVS.
Extremely high dv/dt capability	12 V/ns rating prevents false turn-on during high-speed voltage transitions in high-side configurations.
Minimized gate charge	22 nC total charge enables lower gate driver power consumption and reduced switching losses at 65–100 kHz.
Zener-protected gate	Integrated 30 V bidirectional Zener eliminates need for external gate clamp diodes in cost-sensitive consumer power supplies.
Improved diode reverse recovery	220 ns t_rr and 1.4 µC Q_rr reduce voltage overshoot and ringing during freewheeling in DCM operation.

Applications

AC-DC Adapters

Flyback SMPS

Use Scenario: Universal-input (85–265 VAC), 15–30 W wall adapters for consumer electronics.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch in self-oscillating or PWM-controlled flyback converter.

Use Value: 620 V rating avoids derating at peak line voltage (375 VDC); low R_DS(on) maintains >85% efficiency at full load.

Use Scenario: Isolated 24 V/2 A industrial control power supply with reinforced insulation.

IC Role / Device Role / Timing Role: Main switching element in discontinuous conduction mode (DCM) flyback topology.

Use Value: 115 mJ E_AS sustains repeated unclamped switching during startup or overload without failure.

LED Drivers

Industrial Power Supplies

Use Scenario: Constant-current LED driver for street lighting with active PFC front-end.

IC Role / Device Role / Timing Role: DC-DC buck-boost or flyback switch handling 300–400 VDC bus.

Use Value: 12 V/ns dv/dt immunity prevents spurious turn-on during PFC stage commutation transients.

Use Scenario: 48 V telecom rectifier module with hold-up capacitor support.

IC Role / Device Role / Timing Role: Primary switch in forward or half-bridge configuration with synchronous rectification.

Use Value: D²PAK package delivers 1.79 °C/W thermal resistance, enabling 70 W operation with passive heatsinking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4N62K3	TO-220 package; identical electrical specs but higher R_thj-case (2.5 °C/W) and no integrated Zener.	Suitable for prototyping or low-volume through-hole assembly; requires external gate protection.	Select when board space permits TO-220 mounting and gate transient risk is mitigated externally.
FQP4N62	620 V, 2.2 Ω R_DS(on), 4 A, TO-220; no avalanche rating or Zener protection; Q_g = 28 nC.	Lower-cost alternative for non-critical applications where ESD robustness and avalanche margin are secondary.	Choose only for cost-driven, non-safety-critical designs with controlled gate drive and soft-start circuitry.

Compared with STP4N62K3 and FQP4N62, the STB4N62K3 offers superior thermal performance via D²PAK, guaranteed avalanche ruggedness, and integrated gate protection - making it the preferred choice for production-grade, high-reliability offline power conversion.

Availability

STB4N62K3 is available at Aetrix Electronics and suitable for AC-DC adapters, flyback SMPS, and LED drivers requiring stable component supply across extended product lifecycles.

Supply support for STB4N62K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and analog/mixed-signal ICs for industrial, automotive, and consumer markets.

The SuperMESH3™ Power MOSFET product line targets high-efficiency, high-reliability offline power conversion - engineered specifically for ruggedness, low conduction loss, and simplified gate drive in cost-sensitive, high-volume power supplies.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STB4N62K3 supports 2 A continuous drain current at T_C = 100 °C, as specified in Table 2 (Absolute Maximum Ratings). This reflects thermal derating due to junction-to-case thermal resistance (1.79 °C/W) and maximum T_j = 150 °C. At T_C = 25 °C, it delivers 3.8 A continuously with 70 W total dissipation.

Does STB4N62K3 require external gate protection?

No. The device integrates bidirectional gate-source Zener diodes rated at 30 V (V_(BR)GSO), providing inherent protection against gate overvoltage transients. This eliminates the need for external clamping diodes in typical adapter and SMPS applications, reducing BOM count and layout complexity.

How does the D²PAK package improve thermal performance versus DPAK?

The D²PAK (TO-263) package delivers 1.79 °C/W junction-to-case thermal resistance, significantly lower than the DPAK (TO-252) version's 2.5 °C/W. Its larger exposed drain tab and thicker copper leads enable more efficient heat transfer to external heatsinks, supporting higher power density in compact designs.

Can STB4N62K3 replace STD4N62K3 in existing designs?

Yes - both share identical electrical specifications (V_DS, R_DS(on), Q_g, E_AS) and pinout, but STB4N62K3 uses D²PAK while STD4N62K3 uses DPAK. Replacement requires PCB footprint revision and thermal validation, as D²PAK offers better thermal performance but occupies more board area.

STB4N62K3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH3™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 620 V

Current - Continuous Drain (Id) @ 25°C:: 3.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.95Ohm @ 1.9A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 450 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 70W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB4N62K3 FAQ

1.How can I place an order for STB4N62K3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB4N62K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB4N62K3 reliable?

The price and inventory of STB4N62K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB4N62K3 is usually 5 days.

3.What payment methods are accepted for STB4N62K3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB4N62K3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB4N62K3?

STB4N62K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB4N62K3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB4N62K3?

For technical support, including STB4N62K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB4N62K3 requirements.

6.How does Aetrix verify that STB4N62K3 is sourced from the original manufacturer or authorized distributors?

All STB4N62K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB4N62K3 meets industry standards.

7.What is the process for return or replacement of STB4N62K3?

All STB4N62K3 units undergo pre-shipment inspection (PSI). If there is an issue with STB4N62K3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB4N62K3 part is unused and in its original packaging.

Return procedure for STB4N62K3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…