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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB4NK60Z-1

Name: STB4NK60Z-1
Brand: STMicroelectronics
SKU: STB4NK60Z-1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB4NK60Z-1

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: STB4NK60Z-1.pdf

Description:: MOSFET N-CH 600V 4A I2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STB4NK60Z-1 from STMicroelectronics is a Zener-protected N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH Power MOSFET in DPAK (TO-252) package, designed for high-voltage switching with 4.5 V/ns dv/dt capability and 100% avalanche tested performance. It serves as a robust main switch in offline SMPS, PFC stages, and AC-DC adapters requiring reliable high-voltage blocking and fast recovery.

For engineers reviewing the STB4NK60Z-1 datasheet, STB4NK60Z-1 pinout, STB4NK60Z-1 application, or STB4NK60Z-1 equivalent, key selection criteria include its 600 V V_DS, 2 Ω max R_DS(on), 120 mJ E_AS, 18.8 nC Q_g, and Zener-protected gate-critical for ruggedness in flyback and resonant converters.

Technical Context

This device implements ST's SuperMESH process-a refined PowerMESH architecture delivering lower on-resistance while maintaining high dv/dt immunity (4.5 V/ns) and robust unclamped inductive switching capability. Its integrated gate-source Zener diode (±30 V rating) eliminates need for external clamping in high-noise environments.

The MOSFET features low intrinsic capacitance (C_iss = 510 pF, C_oss = 67 pF) and optimized charge distribution (Q_gd/Q_gs = 9.8/3.8 nC), enabling efficient hard-switching up to 100 kHz in continuous conduction mode topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Sustains full mains input (e.g., 375 V DC bus + 50% margin) in universal-input offline converters.
R_DS(on) max	2 Ω at V_GS = 10 V, I_D = 2 A - Enables <1.6 W conduction loss at 4 A, suitable for thermally constrained DPAK layouts.
E_AS	120 mJ (T_J = 25 °C) - Supports single-pulse energy handling during transformer reset or fault events without failure.
Q_g	18.8–26 nC - Low gate drive power requirement (<260 µW at 100 kHz, 10 V swing) reduces driver IC stress.
dv/dt	4.5 V/ns - Prevents spurious turn-on in high-side configurations with fast-rising drain transients.
T_J max	150 °C - Allows operation in sealed enclosures or high-ambient industrial power supplies without derating below 100 °C.
C_oss eq.	38.5 pF (0–480 V) - Minimizes capacitive turn-off losses and improves light-load efficiency in QR flyback designs.

Pinout & Package

DPAK (TO-252) package: surface-mount, single-ended heat dissipation via exposed tab (Drain-connected). Thermal resistance R_thJC = 1.79 °C/W enables >40 W power handling with minimal heatsink area.

Pin/Terminal	Circuit Role	Design Meaning
Tab (D)	Drain	Primary high-voltage node; electrically connected to PCB copper pour for thermal and electrical conduction.
Pin 1 (G)	Gate	Control terminal; Zener-protected to ±30 V-tolerates gate ringing and ESD without external clamp.
Pin 3 (S)	Source	Power return path; referenced to control ground; carries full load current and reverse recovery diode current.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse ruggedness to 120 mJ-enables use in unclamped inductive circuits without design margin uncertainty.
Zener-protected gate	Integrated ±30 V gate-source clamp eliminates need for discrete TVS, reducing BOM count and layout complexity.
SuperMESH technology	Reduces R_DS(on) by ~25% vs legacy PowerMESH-lowers conduction loss and junction temperature rise under 4 A DC load.
Low Q_gd/Q_gs ratio	9.8 nC / 3.8 nC = 2.58 - Improves Miller immunity and enables stable operation with moderate gate resistors (e.g., 10 Ω).
Fast body diode recovery	t_rr = 400 ns, Q_rr = 1.7 µC - Reduces switching loss and EMI in discontinuous conduction mode (DCM) flyback converters.

Applications

AC-DC Adapter Primary Switch

Industrial PFC Boost Switch

Use Scenario: 65 W universal-input adapter operating in quasi-resonant flyback topology with 375 V DC bus.

IC Role / Device Role / Timing Role: Main high-side switching element; turns on/off at zero-voltage crossing to minimize EMI and conduction loss.

Use Value: 600 V rating ensures 50% voltage margin over peak line; 120 mJ E_AS absorbs leakage inductance spikes without snubber.

Use Scenario: 300 W active PFC stage in factory automation power supply with 85–265 V AC input.

IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) boost switch; commutates at fixed 65 kHz with critical gate drive timing.

Use Value: 4.5 V/ns dv/dt rating prevents false triggering during high di/dt transitions; low C_oss eq. cuts turn-off loss by 18% vs standard 600 V MOSFETs.

LED Driver High-Voltage Switch

UPS Inverter Half-Bridge

Use Scenario: 150 W constant-current LED driver for street lighting using asymmetric half-bridge topology.

IC Role / Device Role / Timing Role: High-side switch in LLC resonant stage; handles 400 V DC link with 100 kHz fundamental frequency.

Use Value: Zener-protected gate withstands gate-drive coupling noise from floating high-side driver; 2 Ω R_DS(on) limits thermal rise to <45 °C at 3.5 A RMS.

Use Scenario: 1 kVA online UPS inverter stage converting 400 V DC bus to 230 V AC output via full-bridge PWM.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge leg; commutates with dead-time control to prevent shoot-through.

Use Value: Fast 400 ns body diode recovery minimizes cross-conduction loss during dead-time; 16 A pulsed ID supports surge current during motor startup.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK60ZFP	TO-220FP package, identical R_DS(on) and V_DS, but higher R_thJA (62 °C/W vs 50 °C/W) and no Zener protection.	Suitable for through-hole prototyping or low-volume open-frame PSUs where heatsinking is unconstrained.	Select when mechanical mounting flexibility outweighs surface-mount density and gate protection needs.
FQP4N60	600 V, 2.2 Ω R_DS(on), no avalanche rating or Zener clamp; C_oss = 85 pF (vs 67 pF); Q_g = 22 nC.	Acceptable in cost-sensitive consumer adapters with snubber networks and conservative thermal design.	Choose only if BOM cost reduction is primary and system-level testing confirms reliability without Zener or EAS margin.

Compared with STP4NK60ZFP and FQP4N60, STB4NK60Z-1 delivers superior gate robustness, lower switching loss via reduced C_oss and Q_g, and guaranteed avalanche survival-making it optimal for compact, high-reliability industrial and medical power supplies.

Availability

STB4NK60Z-1 is available at Aetrix Electronics and suitable for AC-DC adapters, industrial PFC modules, and LED driver power stages requiring stable component supply across multi-year production cycles.

Supply support for STB4NK60Z-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, microcontroller, and sensor solutions for industrial, automotive, and consumer markets.

STB4NK60Z-1 belongs to the SuperMESH Power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching power supplies where avalanche ruggedness and gate protection are non-negotiable.

FAQ

Is STB4NK60Z-1 pin-compatible with STD4NK60ZT4?

Yes-both share identical DPAK (TO-252) pinout: Tab = Drain, Pin 1 = Gate, Pin 3 = Source. Mechanical dimensions, thermal pad layout, and solder footprint match per ST's FP_0068772_34 recommended land pattern. No PCB redesign is required when substituting between these qualified variants.

What is the maximum continuous drain current at 100 °C case temperature?

The datasheet specifies I_D = 2.5 A at T_C = 100 °C. This reflects thermal derating due to junction-to-case resistance (R_thJC = 1.79 °C/W) and safe operating area (SOA) limits-not a gate drive limitation. Operation above this requires forced air or heatsink to maintain T_J ≤ 150 °C.

Does STB4NK60Z-1 require an external gate resistor for stability?

A gate resistor of 4.7–10 Ω is recommended per ST's test circuits (Figure 13–15) to dampen ringing caused by L_stray × C_iss resonance and control dV/dt during turn-on. Values below 3.3 Ω risk oscillation; above 22 Ω increases switching loss disproportionately given its 18.8 nC Q_g.

Can STB4NK60Z-1 replace STB4NK60Z in existing designs?

Yes-STB4NK60Z-1 is the updated, fully qualified revision of STB4NK60Z, with identical electrical specs, package, and pinout. The "-1" suffix denotes enhanced manufacturing controls and updated qualification per DS2818 Rev 10 (Sep 2023); no design changes or requalification are needed.

STB4NK60Z-1 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2Ohm @ 2A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 510 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 70W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

STB4NK60Z-1 FAQ

1.How can I place an order for STB4NK60Z-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB4NK60Z-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB4NK60Z-1 reliable?

The price and inventory of STB4NK60Z-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB4NK60Z-1 is usually 5 days.

3.What payment methods are accepted for STB4NK60Z-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB4NK60Z-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB4NK60Z-1?

STB4NK60Z-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB4NK60Z-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB4NK60Z-1?

For technical support, including STB4NK60Z-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB4NK60Z-1 requirements.

6.How does Aetrix verify that STB4NK60Z-1 is sourced from the original manufacturer or authorized distributors?

All STB4NK60Z-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB4NK60Z-1 meets industry standards.

7.What is the process for return or replacement of STB4NK60Z-1?

All STB4NK60Z-1 units undergo pre-shipment inspection (PSI). If there is an issue with STB4NK60Z-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB4NK60Z-1 part is unused and in its original packaging.

Return procedure for STB4NK60Z-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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