Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

STMicroelectronics STB4NK60ZT4

Part No.:
STB4NK60ZT4
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixSTB4NK60ZT4.pdf
Description:
MOSFET N-CH 600V 4A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,327

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

STB4NK60ZT4 from STMicroelectronics is a Zener-protected N-channel SuperMESH Power MOSFET in DPAK (TO-252) package, rated 600 V VDS, 1.7 Ω typ. RDS(on) at VGS = 10 V, 4 A continuous drain current at TC = 25 °C, and 100% avalanche tested - deployed in offline SMPS primary-side switching.

For engineers reviewing the STB4NK60ZT4 datasheet, STB4NK60ZT4 pinout, STB4NK60ZT4 application, or STB4NK60ZT4 equivalent, key selection criteria include dv/dt capability (4.5 V/ns), low gate charge (18.8 nC typ.), Zener-protected gate, avalanche energy rating (120 mJ), and DPAK thermal resistance (RthJC = 1.79 °C/W).

Technical Context

This device implements ST's SuperMESH process - an optimized evolution of PowerMESH - delivering reduced on-resistance while maintaining high ruggedness. Its intrinsic Zener diode across gate-source provides ±30 V ESD protection (HBM 3 kV) and prevents gate oxide failure during transient overvoltage events.

The MOSFET exhibits fast switching with td(on) = 12 ns, tr = 9.5 ns, td(off) = 29 ns, and tf = 16.5 ns under resistive load conditions (VDD = 300 V, ID = 2 A, RG = 4.7 Ω), and supports unclamped inductive switching with 4 A repetitive avalanche current.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 600 V - supports 400 V AC mains-derived DC bus with 50% safety margin for flyback/LLC primary-side switching
RDS(on) max 2 Ω - ensures ≤8 W conduction loss at 2 A DC, enabling thermally constrained DPAK operation
ID cont @ TC=25°C 4 A - defines maximum continuous current before SOA-limited derating begins
EAS 120 mJ - enables robust unclamped inductive turn-off without external snubber in 65–100 kHz SMPS
Qg typ 18.8 nC - reduces gate drive power and allows use of low-current drivers (e.g., 100 mA peak)
dv/dt rating 4.5 V/ns - sustains high-speed switching in noisy high-voltage environments without false turn-on
Coss eq 38.5 pF - lowers capacitive switching loss and improves light-load efficiency in resonant topologies

Pinout & Package

DPAK (TO-252) package: surface-mount, single-ended heatsinkable tab, 3-terminal configuration with exposed drain pad for thermal and electrical connection.

Pin/Terminal Circuit Role Design Meaning
Tab (Drain) High-voltage power output node Electrically connected to drain; serves as primary thermal path to PCB copper pour or heatsink
Pin 1 (Gate) Control input Receives 0–10 V logic-level signal; protected by integrated Zener clamp to ±30 V
Pin 3 (Source) Power return reference Common return for gate drive loop and source current; critical for minimizing noise coupling in high-dv/dt operation

Key Features

Feature Design Value
Zener-protected gate Integrated bidirectional Zener clamps gate-source to ±30 V, eliminating need for external TVS in most designs
100% avalanche tested Every unit validated for single-pulse avalanche energy ≥120 mJ, ensuring field reliability in inductive turn-off
Minimized gate charge Qg = 18.8 nC typ. reduces driver losses and enables higher-frequency operation without excessive heat
Low Ciss/Coss Ciss = 510 pF, Coss = 67 pF - improves hard-switching efficiency and reduces EMI generation
High dv/dt immunity Rated 4.5 V/ns - suppresses parasitic turn-on in high-side configurations and fast-rising bus transients

Applications

AC-DC Adapter Primary Switch LED Driver Flyback Controller

Use Scenario: 12–24 W universal-input (90–264 VAC) offline flyback converter powering USB-C PD adapters.

IC Role / Device Role: Primary-side high-voltage switch handling full rectified line voltage and transformer magnetizing current.

Use Value: Zener protection eliminates external gate clamp; 120 mJ EAS absorbs leakage inductance spikes without snubber loss.

Use Scenario: Constant-current isolated LED driver for commercial downlights (220 VAC input, 36 V/700 mA output).

IC Role / Device Role: Main power switch regulating energy transfer into secondary-side LED string via optocoupler feedback.

Use Value: Low RDS(on) (1.7 Ω typ.) minimizes conduction loss at 350 mA average drain current; DPAK footprint simplifies thermal layout.

Industrial PLC Power Supply Appliance SMPS Auxiliary Converter

Use Scenario: 5 V/2 A auxiliary supply in programmable logic controller, operating continuously at 60 °C ambient.

IC Role / Device Role: Primary-side switch in quasi-resonant flyback supplying isolated control rails and communication interfaces.

Use Value: RthJC = 1.79 °C/W enables direct tab-to-heatsink mounting; 4.5 V/ns dv/dt rating prevents misfiring in electrically noisy factory environments.

Use Scenario: Standby power supply in refrigerator or washing machine, required to operate 24/7 with <100 mW no-load consumption.

IC Role / Device Role: High-voltage startup and regulation switch in self-supplied flyback topology powering MCU and sensors.

Use Value: Ultra-low IDSS (1 µA at 600 V) reduces standby leakage; integrated Zener avoids discrete protection components, saving board space.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP4NK60ZFP TO-220FP package, identical die, RDS(on) = 2 Ω max, same 600 V rating but higher RthJC (1.9 °C/W) Requires through-hole assembly and external heatsink; unsuitable for compact SMT-only designs Select when mechanical mounting flexibility or legacy TO-220 footprint compatibility is required
FQP4N60C 600 V, 2.2 Ω max RDS(on), no integrated Zener, Qg = 22 nC, lower EAS (85 mJ) Lacks gate protection - mandates external 18 V Zener; less rugged in unclamped inductive switching Choose only if cost sensitivity outweighs reliability requirements and external protection is acceptable

Compared with STP4NK60ZFP and FQP4N60C, STB4NK60ZT4 uniquely combines SMT DPAK packaging, integrated Zener gate protection, and 120 mJ avalanche energy - making it optimal for space-constrained, high-reliability offline converters where gate robustness and thermal performance are critical.

Availability

STB4NK60ZT4 is available at Aetrix Electronics and suitable for AC-DC adapters, LED lighting drivers, industrial PLC power supplies, and appliance auxiliary SMPS requiring stable component supply and long-term manufacturability.

Supply support for STB4NK60ZT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STB4NK60ZT4 belongs to ST's SuperMESH Power MOSFET product line - engineered specifically for high-efficiency, high-reliability offline switching power supplies operating up to 100 kHz with minimal external protection.

FAQ

Is STB4NK60ZT4 pin-compatible with STD4NK60ZT4?

Yes - STB4NK60ZT4 and STD4NK60ZT4 share identical DPAK (TO-252) pinout (Tab=Drain, Pin1=Gate, Pin3=Source), identical absolute maximum ratings, and identical electrical characteristics per ST's DS2818 Rev 10 datasheet. They differ only in marking and internal traceability codes, not functionality or layout.

What is the maximum recommended gate resistor value for reliable switching?

For safe operation at 100 kHz with VGS = 10 V drive, RG should not exceed 10 Ω to ensure tf ≤ 16.5 ns and prevent cross-conduction in half-bridge configurations. At RG = 4.7 Ω (datasheet test condition), total switching time is ≤ 67 ns - sufficient for most flyback and QR controllers.

Does STB4NK60ZT4 require external gate protection in standard flyback designs?

No - its integrated gate-source Zener diode clamps to ±30 V and withstands 3 kV HBM ESD, eliminating need for external TVS in typical 600 V-class flyback applications. External protection is only advised in systems with >30 V gate drive overshoot or severe board-level ESD exposure beyond IEC 61000-4-2 Level 4.

Can STB4NK60ZT4 be used in hard-switched PFC boost stages?

No - while rated for 600 V, its RDS(on) (2 Ω max) and Qg (26 nC max) result in excessive conduction and switching losses above 100 kHz. It is optimized for 65–100 kHz flyback/QR, not continuous conduction mode (CCM) PFC where lower RDS(on) (<0.5 Ω) and faster Qgd/Qgs ratios are mandatory.

STB4NK60ZT4 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
SuperMESH™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
2Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:
26 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
510 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
70W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

STB4NK60ZT4 FAQ

1.How can I place an order for STB4NK60ZT4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB4NK60ZT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB4NK60ZT4 reliable?

The price and inventory of STB4NK60ZT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB4NK60ZT4 is usually 5 days.

3.What payment methods are accepted for STB4NK60ZT4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB4NK60ZT4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB4NK60ZT4?

STB4NK60ZT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB4NK60ZT4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB4NK60ZT4?

For technical support, including STB4NK60ZT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB4NK60ZT4 requirements.

6.How does Aetrix verify that STB4NK60ZT4 is sourced from the original manufacturer or authorized distributors?

All STB4NK60ZT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB4NK60ZT4 meets industry standards.

7.What is the process for return or replacement of STB4NK60ZT4?

All STB4NK60ZT4 units undergo pre-shipment inspection (PSI). If there is an issue with STB4NK60ZT4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB4NK60ZT4 part is unused and in its original packaging.

Return procedure for STB4NK60ZT4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STB4NK60ZT4 Tags

  • STB4NK60ZT4
  • STB4NK60ZT4 PDF
  • STB4NK60ZT4 Datasheet
  • STB4NK60ZT4 Specifications
  • STB4NK60ZT4 Images
  • STMicroelectronics
  • STMicroelectronics STB4NK60ZT4
  • Buy STB4NK60ZT4
  • STB4NK60ZT4 Price
  • STB4NK60ZT4 Distributor
  • STB4NK60ZT4 Supplier
  • STB4NK60ZT4 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER