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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB50N25M5

Name: STB50N25M5
Brand: STMicroelectronics
SKU: STB50N25M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB50N25M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB50N25M5.pdf

Description:: MOSFET N-CH 250V 28A D2PAK

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Product details

Overview

STB50N25M5 from STMicroelectronics is an N-channel MDmesh™ V Power MOSFET in D²PAK package, rated for 250 V V_DSS, 0.065 Ω R_DS(on) (typ.) at V_GS = 10 V and I_D = 14 A, with 28 A continuous drain current at T_C = 25 °C. It delivers high dv/dt capability (15 V/ns), 100% avalanche tested performance, and is optimized for high-efficiency switching in offline SMPS and PFC stages.

For engineers reviewing the STB50N25M5 datasheet, STB50N25M5 pinout, STB50N25M5 application, or STB50N25M5 equivalent, key selection criteria include its low R_DS(on) × area ratio, robust unclamped inductive switching capability (E_AS = 350 mJ), thermal resistance (R_thj-case = 0.31 °C/W), and D²PAK package suitability for high-power board-level thermal management.

Technical Context

This MOSFET employs ST's proprietary MDmesh™ V vertical silicon process combined with PowerMESH™ horizontal layout to achieve ultra-low on-resistance while maintaining high voltage blocking. Its gate charge profile (Q_g = 44 nC, Q_gd = 23 nC) supports fast, controllable switching with minimal Miller-induced oscillation.

The device integrates a robust body diode with t_rr = 174 ns (T_J = 25 °C) and Q_rr = 1.5 µC under standard test conditions, enabling efficient hard-switched and quasi-resonant topologies without external freewheeling diodes in many cases.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	250 V - Maximum drain-source blocking voltage for offline AC-DC front-end and industrial DC-DC converters.
R_DS(on) max	0.075 Ω - Confirmed worst-case on-resistance at V_GS = 10 V and I_D = 14 A, defining conduction loss in high-current paths.
I_D (cont.)	28 A at T_C = 25 °C - Continuous drain current rating under ideal heatsink conditions, used for thermal derating calculations.
E_AS	350 mJ - Single-pulse avalanche energy at V_DD = 50 V, ID = I_AR = 9 A, TJ = 25 °C, confirming ruggedness in inductive turn-off events.
dv/dt	15 V/ns - Peak diode recovery voltage slope limit, critical for noise immunity and EMI control in fast-switching converters.
Q_g	44 nC - Total gate charge at V_DD = 200 V, I_D = 28 A, V_GS = 10 V, directly sizing gate driver output capability.
R_thj-case	0.31 °C/W - Junction-to-case thermal resistance, enabling accurate junction temperature estimation with measured case temperature.

Pinout & Package

The STB50N25M5 is housed in a D²PAK (TO-263) surface-mount package with exposed drain tab for enhanced thermal dissipation and mechanical anchoring. The package complies with ECOPACK® environmental standards and is supplied in tape-and-reel format (1000 pcs/reel).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal requiring ≤ ±25 V gate-source voltage; low input capacitance (C_iss = 1700 pF) enables easy drive with standard gate drivers.
Pin 2 (S)	Source	Reference node for gate drive and current sensing; connected to PCB ground plane with low-inductance layout to minimize switching noise.
Tab (D)	Drain	High-voltage power terminal electrically tied to the exposed copper tab; must be soldered to large copper pour for thermal and electrical integrity.

Key Features

Feature	Design Value
MDmesh™ V silicon technology	Delivers industry-leading R_DS(on) × area ratio, reducing conduction losses and footprint in high-density power supplies.
100% avalanche tested	Guarantees single-pulse ruggedness up to E_AS = 350 mJ, eliminating need for external snubbers in clamp-free flyback or LLC designs.
Low Q_gd/Q_g ratio	Q_gd = 23 nC / Q_g = 44 nC ≈ 0.52 - Enables clean, Miller-resistant turn-off with reduced risk of shoot-through in half-bridge configurations.
Optimized body diode	t_rr = 174 ns and Q_rr = 1.5 µC at T_J = 25 °C - Supports ZVS operation and reduces reverse recovery losses in resonant converters.

Applications

Server PSU Primary Switch

Industrial Motor Drive Inverter

Use Scenario: High-efficiency 3.3 kW server power supply operating at 100 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: Main switching FET in primary-side power conversion stage handling 28 A peak current at 250 V bus.

Use Value: Low R_DS(on) (0.065 Ω) cuts conduction loss by >30% vs. legacy 200 V MOSFETs, improving full-load efficiency to >95.2%.

Use Scenario: 7.5 kW three-phase inverter for HVAC compressors using six-pack D²PAK-based power modules.

IC Role / Device Role / Timing Role: Upper-leg switching element in IGBT-like half-bridge configuration with isolated gate drive.

Use Value: 15 V/ns dv/dt rating ensures reliable operation during fast bus transients in motor phase-leg commutation.

Telecom Rectifier Module

PFC Boost Stage

Use Scenario: 2.5 kW telecom rectifier with interleaved boost PFC + LLC DC-DC, operating at 50–100 kHz.

IC Role / Device Role / Timing Role: Synchronous rectifier in LLC secondary side, replacing Schottky diodes to reduce conduction loss.

Use Value: Body diode Q_rr = 1.5 µC minimizes reverse recovery loss during zero-voltage switching transitions.

Use Scenario: Active PFC boost converter in 1.2 kW industrial lighting ballast, operating at 65 kHz.

IC Role / Device Role / Timing Role: Main switch in boost inductor path, conducting 28 A RMS current with 250 V DC link.

Use Value: R_thj-case = 0.31 °C/W allows direct mounting to aluminum heatsink, maintaining T_J < 125 °C at full load without forced air.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP50R250CP	R_DS(on) = 0.25 Ω (higher), V_DSS = 500 V, TO-220FP package, no avalanche rating specified	Higher voltage margin but 3.8× higher conduction loss; requires larger heatsink and lacks guaranteed avalanche ruggedness	Select only if 500 V rating is mandatory and efficiency targets permit higher R_DS(on).
STW50N25M5	Identical silicon die and specs, but in TO-247 package with higher R_thj-case = 0.45 °C/W and different pinout	Same electrical performance but incompatible footprint; suited for through-hole prototyping or legacy layouts	Choose when mechanical compatibility with TO-247 sockets or higher creepage requirements dictate leaded packaging.

Compared with IPP50R250CP and STW50N25M5, the STB50N25M5 uniquely combines 250 V rating, ultra-low 0.065 Ω R_DS(on), D²PAK thermal performance (0.31 °C/W), and 100% avalanche testing-making it optimal for space-constrained, high-efficiency, high-reliability surface-mount power stages.

Availability

STB50N25M5 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, telecom rectifiers, and active PFC modules requiring stable component supply across multi-year production cycles.

Supply support for STB50N25M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

The STB50N25M5 belongs to ST's MDmesh™ V high-voltage power MOSFET product line, engineered specifically for high-frequency, high-efficiency switching in offline AC-DC and DC-DC converters where low R_DS(on) and avalanche ruggedness are critical.

FAQ

What is the maximum gate-source voltage rating for STB50N25M5?

The absolute maximum gate-source voltage (V_GS) is ±25 V, as specified in Table 2 of the official datasheet (Doc ID 15923 Rev 3). Exceeding this rating risks permanent gate oxide damage. Recommended operating range is –20 V to +20 V for reliable long-term performance under transient conditions.

Does STB50N25M5 have a fully characterized body diode for synchronous rectification?

Yes-the source-drain diode is fully characterized with t_rr = 174 ns, Q_rr = 1.5 µC, and V_SD = 1.6 V at I_SD = 28 A (Table 7). These parameters are measured under standardized inductive switching conditions and support design of synchronous rectifier circuits in LLC and flyback topologies.

Can STB50N25M5 be used in avalanche mode for clamping protection?

Yes-it is 100% avalanche tested per datasheet Section 1, with E_AS = 350 mJ at V_DD = 50 V, I_AR = 9 A, and starting T_J = 25 °C. This validated ruggedness allows safe use in unclamped inductive switching applications without external snubbers, provided single-pulse energy remains within the rated limit.

Is the D²PAK package of STB50N25M5 RoHS-compliant and halogen-free?

Yes-the device meets RoHS Directive 2011/65/EU and is halogen-free per ST's ECOPACK® specifications. The D²PAK package uses lead-free matte tin plating and complies with JEDEC J-STD-020 moisture sensitivity level (MSL) 3, as documented in Section 4 of the datasheet.

STB50N25M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 65mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1700 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STB50N25M5 FAQ

1.How can I place an order for STB50N25M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB50N25M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB50N25M5 reliable?

The price and inventory of STB50N25M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB50N25M5 is usually 5 days.

3.What payment methods are accepted for STB50N25M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB50N25M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB50N25M5?

STB50N25M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB50N25M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB50N25M5?

For technical support, including STB50N25M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB50N25M5 requirements.

6.How does Aetrix verify that STB50N25M5 is sourced from the original manufacturer or authorized distributors?

All STB50N25M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB50N25M5 meets industry standards.

7.What is the process for return or replacement of STB50N25M5?

All STB50N25M5 units undergo pre-shipment inspection (PSI). If there is an issue with STB50N25M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB50N25M5 part is unused and in its original packaging.

Return procedure for STB50N25M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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