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STMicroelectronics STB50N65DM6
- Part No.:
- STB50N65DM6
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB50N65DM6.pdf
- Description:
- MOSFET N-CH 650V 33A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,554
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Product details
Overview
STB50N65DM6 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh DM6 series, featuring 650 V VDS, 74 mΩ typ. RDS(on) at VGS = 10 V, 33 A continuous drain current at TC = 25 °C, fast-recovery body diode (trr = 130 ns), and 100% avalanche tested. It targets high-efficiency bridge topologies and ZVS phase-shift converters.
For engineers reviewing the STB50N65DM6 datasheet, STB50N65DM6 pinout, STB50N65DM6 application, or STB50N65DM6 equivalent, key selection criteria include RDS(on) per area, Qrr (0.65 µC), dv/dt ruggedness (100 V/ns), gate charge (Qg = 52.5 nC), and D²PAK thermal resistance (RthJC = 0.5 °C/W).
Technical Context
This MOSFET employs ST's MDmesh DM6 silicon process optimized for high-voltage switching with ultra-low recovery charge (Qrr = 0.65 µC) and fast reverse recovery time (trr = 130 ns at TJ = 25 °C). Its Zener-protected gate and 100% unclamped inductive avalanche testing (EAS = 560 mJ) support robust operation in hard-switched and resonant topologies.
The device delivers low dynamic losses via Ciss = 2300 pF, Coss = 165 pF, and Crss = 3 pF at VDS = 100 V, enabling efficient ZVS turn-on. Its RDS(on) exhibits <2.5× increase from 25 °C to 125 °C (normalized curve), supporting stable conduction across industrial temperature ranges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 650 V - supports 400 V bus designs with ≥30 % voltage margin for transient spikes |
| RDS(on) max | 91 mΩ - ensures ≤1 W conduction loss at 33 A ID, critical for thermal management in D²PAK |
| Qg | 52.5 nC - enables fast, low-loss switching with moderate gate driver strength (e.g., 2 A peak) |
| trr | 130 ns - minimizes commutation loss and EMI in bridge-leg hard-switching applications |
| EAS | 560 mJ - guarantees single-pulse avalanche survivability without derating in inductive load faults |
| RthJC | 0.5 °C/W - allows 250 W power dissipation with ≤125 °C junction rise above case (TC) |
Pinout & Package
Package: D²PAK (TO-263) type A2 - surface-mount, thermally enhanced package with exposed drain tab for direct heatsink mounting and low RthJC.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Tab) | Drain terminal / heat sink interface | Exposed copper tab electrically connected to drain; primary thermal path to heatsink |
| G (Pin 1) | Gate input | Controls channel conduction; requires 10 V drive for full RDS(on) specification |
| S (Pin 3) | Source reference | Common return node for gate drive and load current; ties to PCB ground plane |
Key Features
| Feature | Design Value |
|---|---|
| Fast-recovery body diode | trr = 130 ns and Qrr = 0.65 µC reduce switching loss and voltage overshoot during synchronous rectification |
| Low gate charge | Qg = 52.5 nC lowers driver power requirement and improves switching efficiency in high-frequency converters |
| 100% avalanche tested | EAS = 560 mJ rating verified per unit, eliminating need for external snubbers in inductive fault conditions |
| Zener-protected gate | ±25 V VGS rating with integrated gate oxide protection prevents ESD-induced failure during handling and assembly |
| High dv/dt ruggedness | 100 V/ns rated dv/dt withstand ensures reliable operation in high-slew-rate half-bridge node transitions |
Applications
| Industrial Motor Drives | Server PSU LLC Resonant Converters |
|---|---|
|
Use Scenario: Three-phase inverter stage in 5–15 kW servo drives operating at 16–20 kHz switching frequency. IC Role / Device Role / Timing Role: High-side/low-side switching element in IGBT/MOSFET hybrid or all-MOSFET bridge, handling 33 A RMS motor phase current. Use Value: Low Qrr and fast trr suppress shoot-through risk and reduce dead-time penalty, improving torque linearity and efficiency. |
Use Scenario: Primary-side synchronous rectifier switch in 3.3 kW server PSUs using asymmetric half-bridge LLC topology. IC Role / Device Role / Timing Role: ZVS-capable high-voltage switch operating at 300–700 kHz with 520 V VDS stress. Use Value: Coss = 165 pF and low Crss enable reliable zero-voltage turn-on across wide load range, reducing switching loss by >15 % vs prior MDmesh generations. |
| Solar Microinverters | EV On-Board Chargers (OBC) |
|
Use Scenario: DC-AC H-bridge in 300–600 W microinverters interfacing with single PV panel under partial shading. IC Role / Device Role / Timing Role: Full-bridge leg switch managing bidirectional energy flow with 650 V blocking capability. Use Value: 100% avalanche rating eliminates need for external clamping circuits during grid fault transients, simplifying BOM and layout. |
Use Scenario: Active clamp flyback or dual-active-bridge switch in 6.6 kW OBCs converting AC grid to 400 V battery bus. IC Role / Device Role / Timing Role: High-reliability 650 V switch subjected to repetitive 100 V/ns dv/dt stress during soft-switching transitions. Use Value: Verified 100 V/ns dv/dt ruggedness ensures no false turn-on or gate oxide degradation over 10-year automotive lifecycle. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPW65R090CFD7 | RDS(on) = 90 mΩ (typ), Qrr = 0.42 µC, trr = 105 ns, TO-247 package | Lower Qrr but higher RDS(on); requires larger heatsink due to TO-247 RthJC = 0.55 °C/W | Preferred where diode recovery dominates loss budget and board space permits through-hole mounting |
| IXTH50N65X2 | RDS(on) = 85 mΩ (typ), Qrr = 1.1 µC, trr = 210 ns, TO-247 package | Higher Qrr increases commutation loss; lacks Zener gate protection and 100% avalanche test | Acceptable for non-critical industrial SMPS where cost sensitivity outweighs reliability requirements |
Compared with IPW65R090CFD7 and IXTH50N65X2, STB50N65DM6 offers superior RDS(on)/area efficiency, guaranteed avalanche robustness, and surface-mount D²PAK packaging-making it optimal for space-constrained, high-reliability ZVS and hard-switched bridge designs.
Availability
STB50N65DM6 is available at Aetrix Electronics and suitable for industrial motor drives, server PSUs, solar microinverters, and EV on-board chargers requiring stable component supply and long-term production continuity.
Supply support for STB50N65DM6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.
The MDmesh DM6 product line targets high-efficiency, high-voltage power conversion systems-including resonant topologies, industrial inverters, and renewable energy interfaces-by optimizing RDS(on), Qrr, and dv/dt ruggedness simultaneously.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The STB50N65DM6 supports 21 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS13187 Rev 3. This derating reflects thermal limits of the D²PAK package and ensures safe operation within SOA boundaries up to 150 °C junction temperature.
Does this MOSFET require external gate protection?
No. The STB50N65DM6 integrates Zener protection between gate and source, rated for ±25 V VGS. This eliminates the need for external gate clamps in standard gate drive configurations, though proper PCB layout (short gate traces, local decoupling) remains essential for noise immunity.
How does the body diode performance compare to previous MDmesh generations?
The DM6 body diode achieves trr = 130 ns and Qrr = 0.65 µC at 25 °C-up to 40 % lower Qrr than MDmesh D5 devices. This directly reduces reverse recovery loss and EMI in bridge-leg commutation, especially critical in high-frequency ZVS designs.
Can STB50N65DM6 be used in parallel configurations?
Yes, its positive temperature coefficient for RDS(on) (confirmed in Figure 10) enables stable current sharing when paralleled. Designers must match gate loop inductance and use Kelvin source connections to ensure balanced dynamic current distribution across multiple devices.
STB50N65DM6 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ DM6
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 91mOhm @ 16.5A, 10V
- Vgs(th) (Max) @ Id:
- 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 52.5 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2300 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 250W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
STB50N65DM6 FAQ
1.How can I place an order for STB50N65DM6 through Aetrix?
Please submit a Request for Quotation (RFQ) for STB50N65DM6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB50N65DM6 reliable?
The price and inventory of STB50N65DM6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB50N65DM6 is usually 5 days.
3.What payment methods are accepted for STB50N65DM6?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB50N65DM6 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB50N65DM6?
STB50N65DM6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB50N65DM6 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB50N65DM6?
For technical support, including STB50N65DM6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB50N65DM6 requirements.
6.How does Aetrix verify that STB50N65DM6 is sourced from the original manufacturer or authorized distributors?
All STB50N65DM6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB50N65DM6 meets industry standards.
7.What is the process for return or replacement of STB50N65DM6?
All STB50N65DM6 units undergo pre-shipment inspection (PSI). If there is an issue with STB50N65DM6, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB50N65DM6 part is unused and in its original packaging.
Return procedure for STB50N65DM6:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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