STMicroelectronics STB50NE10T4

Overview

STB50NE10T4 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in D2PAK package, rated for 100 V drain-source voltage, 50 A continuous drain current at 25°C, and 0.021 Ω typical R_DS(on) at V_GS = 10 V. It features 100% avalanche tested ruggedness, low gate charge (123 nC), and exceptional dv/dt capability (6 V/ns), making it suitable for high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the STB50NE10T4 datasheet, STB50NE10T4 pinout, STB50NE10T4 application, or STB50NE10T4 equivalent, key selection criteria include its thermal resistance junction-to-case (0.83 °C/W), safe operating area under pulsed conditions, source-drain diode recovery performance (trr = 155 ns), and ECOPACK® lead-free compliance for industrial power switching designs.

Technical Context

This MOSFET employs ST's "Single Feature Size™" strip-based STripFET™ process, enabling high cell density and low on-resistance while maintaining robust unclamped inductive switching capability. Its gate threshold voltage (2–4 V) ensures reliable turn-on with standard 10 V logic-level drivers, and its 300 mJ single-pulse avalanche energy rating supports fault-tolerant operation in hard-switched topologies.

The device is characterized for operation up to 175 °C junction temperature, with R_DS(on) increasing to 0.027 Ω at 100 °C. Its dynamic parameters-including C_iss = 4350 pF, Q_gd = 47 nC, and t_f = 35 ns-support fast switching in 100 kHz–500 kHz SMPS applications without excessive gate drive loss.

Key Specifications

Pinout & Package

STB50NE10T4 is housed in a surface-mount D2PAK (TO-263) package with three terminals: Gate (G), Drain (D), and Source (S). The drain is connected to the exposed metal tab for low-inductance thermal and electrical path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Compared with IRF540NPBF and STP55NF10, STB50NE10T4 delivers superior thermal performance via D2PAK's low 0.83 °C/W R_thj-case, verified avalanche ruggedness for fault tolerance, and RoHS-compliant ECOPACK® construction-making it optimal for space-constrained, high-reliability industrial power stages.

Availability

STB50NE10T4 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, solar microinverters, and UPS inverter output stages requiring stable component supply and long-term manufacturability assurance.

Supply support for STB50NE10T4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete components, and MEMS sensors for automotive, industrial, and consumer markets.

The STripFET™ Power MOSFET product line targets high-efficiency, high-reliability power conversion systems-specifically engineered for reduced conduction and switching losses in 48 V–100 V industrial and renewable energy applications.

FAQ

Is STB50NE10T4 still in active production?

No-STB50NE10T4 is marked as Obsolete in ST's official documentation (Rev 5, June 2006). While no longer manufactured, Aetrix Electronics maintains legacy inventory with full traceability and provides engineering support for obsolescence mitigation, including validated drop-in alternatives and second-source recommendations.

What is the maximum safe operating temperature for STB50NE10T4?

The absolute maximum junction temperature (T_j) is 175 °C, with storage temperature ranging from –65 °C to +175 °C. Continuous operation above 150 °C requires derating of P_tot by 1.2 W/°C beyond 25 °C case temperature, and thermal design must ensure R_thj-case ≤ 0.83 °C/W to avoid exceeding T_j limits.

Can STB50NE10T4 be used in synchronous rectification applications?

Yes-its low 0.021 Ω R_DS(on), fast 35 ns fall time, and 155 ns source-drain diode reverse recovery time make it suitable for synchronous rectification in DC-DC converters up to 300 kHz. However, body diode conduction must be minimized via precise gate timing to avoid shoot-through, especially when paralleled.

Does STB50NE10T4 require a gate resistor for stability?

Yes-a gate resistor (typically 4.7 Ω, as specified in the datasheet switching test circuit) is required to dampen ringing, control dV/dt-induced gate oscillation, and limit peak gate current during turn-on/turn-off. Omitting it risks spurious turn-on due to Miller capacitance coupling, especially in high-di/dt bridge configurations.