STMicroelectronics STB5N52K3

Overview

STB5N52K3 from STMicroelectronics is an N-channel 525 V, 1.2 Ω, 4.4 A SuperMESH3™ Power MOSFET in D²PAK (TO-263) package, designed for high-voltage switching applications requiring robust avalanche capability and low gate charge. It delivers 70 W total dissipation at T_C = 25 °C, features integrated Zener-protected gate, and is 100% avalanche tested for reliability in flyback, SMPS, and AC-DC adapters.

For engineers reviewing the STB5N52K3 datasheet, STB5N52K3 pinout, STB5N52K3 application, or STB5N52K3 equivalent, this device is selected for high-dv/dt, low-C_iss (545 pF), fast switching (t_r = 9 ns), improved diode recovery (t_rr = 210 ns), and thermal resistance of 1.79 °C/W (junction-to-case), making it critical for compact, high-efficiency power converters.

Technical Context

This MOSFET employs ST's SuperMESH3™ vertical structure, combining optimized cell layout and enhanced epitaxial doping to achieve R_DS(on) = 1.2 Ω at V_GS = 10 V and I_D = 2.2 A while maintaining 525 V V_DSS. Its Zener-protected gate (BVGSO = 30 V) eliminates need for external gate clamping in transient-prone environments.

The device exhibits extremely high dv/dt immunity (12 V/ns), low intrinsic capacitances (C_iss = 545 pF, C_oss = 45 pF, C_rss = 8 pF), and minimized Q_g = 17 nC - enabling efficient operation in hard-switched topologies up to 100 kHz with reduced switching losses and EMI.

Key Specifications

Pinout & Package

D²PAK (TO-263) surface-mount package with exposed drain pad for thermal enhancement and mechanical robustness in automated assembly. Standard ECOPACK® RoHS-compliant construction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP5N52K3, STB5N52K3 offers superior thermal performance in SMT layouts and smaller footprint; versus IPP50R190CFD7, it trades higher R_DS(on) for built-in gate protection and lower Q_g, simplifying design for cost-sensitive, medium-power adapters.

Availability

STB5N52K3 is available at Aetrix Electronics and suitable for AC-DC adapters, flyback converters, LED drivers, and industrial SMPS requiring stable component supply, long-term manufacturability, and RoHS-compliant packaging.

Supply support for STB5N52K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, MCU, and sensor solutions for automotive, industrial, and consumer markets.

STB5N52K3 belongs to the SuperMESH3™ Power MOSFET product line, engineered specifically for high-voltage, high-reliability switching in offline power supplies where avalanche ruggedness, low gate charge, and integrated protection are essential.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STB5N52K3 supports 2.77 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the D²PAK package and ensures safe operation within the SOA boundary at elevated temperatures without exceeding 150 °C junction temperature.

Does STB5N52K3 include internal gate protection?

Yes - the device integrates back-to-back Zener diodes between gate and source, with a breakdown voltage (BVGSO) of 30 V, as confirmed in Table 8. This eliminates the need for external gate protection components and enhances robustness against ESD and transient overvoltage events.

Can STB5N52K3 replace STD5N52K3 in a DPAK footprint?

No - STB5N52K3 uses D²PAK (TO-263), which has larger pad dimensions and different pin spacing than DPAK (TO-252). The two packages are not mechanically or thermally interchangeable; PCB redesign and thermal validation would be required for substitution.

What is the typical reverse recovery time of the body diode?

The body diode reverse recovery time (t_rr) is 210 ns at I_SD = 4.4 A, dI/dt = 100 A/µs, and V_DD = 60 V, as measured per Figure 20 test circuit. At T_J = 150 °C, t_rr increases to 240 ns, confirming stable recovery behavior across operating temperature range.