STMicroelectronics STB5N80K5

Overview

STB5N80K5 from STMicroelectronics is an N-channel 800 V, 4 A Power MOSFET in D²PAK (TO-263) package, fabricated with MDmesh K5 vertical structure technology. It delivers 1.5 Ω typical R_DS(on), 5 nC total gate charge, and 100% avalanche-tested ruggedness for high-voltage switching in offline SMPS and industrial AC-DC converters.

For engineers reviewing the STB5N80K5 datasheet, STB5N80K5 pinout, STB5N80K5 application, or STB5N80K5 equivalent, key selection criteria include its 800 V V_DS, ultra-low Q_g/R_DS(on) FoM, Zener-protected gate, 165 mJ E_AS, and D²PAK thermal performance (R_thJC = 2.08 °C/W).

Technical Context

This MOSFET employs ST's MDmesh K5 proprietary vertical superjunction architecture to minimize conduction and switching losses simultaneously. Its 1.5 Ω typ. R_DS(on) at V_GS = 10 V and 2 A, combined with 5 nC Q_g, enables high-frequency operation up to 100 kHz in hard-switched topologies.

The device integrates a robust body diode with 265 ns t_rr at 25 °C and 386 ns at 150 °C, rated for 4 A continuous source-drain current and 16 A pulsed, while maintaining 50 V/ns MOSFET dv/dt ruggedness under V_DD ≤ 640 V conditions.

Key Specifications

Pinout & Package

D²PAK (TO-263) package: 3-pin surface-mount outline with exposed drain tab for thermal and electrical connection. Mounting requires soldering the tab to ≥1 in² 2-oz copper area per datasheet recommendation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage Power MOSFET applications.

Compared with STP5N80 and IPP60R190C7, STB5N80K5 uniquely balances 800 V capability, Zener-protected gate, and industry-leading FoM-making it optimal for cost-sensitive yet reliability-critical 800 V offline converters where gate drive simplicity and avalanche margin are non-negotiable.

Availability

STB5N80K5 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, LED streetlight drivers, and offline switch-mode power supplies requiring stable component supply and long-term manufacturing continuity.

Supply support for STB5N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-density offline power conversion where 800 V blocking, low R_DS(on), and robust avalanche performance are essential.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STB5N80K5 supports 2.3 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS11343 Rev 3. This derating reflects thermal limits of the D²PAK package and ensures safe operation within SOA boundaries at elevated ambient temperatures in enclosed power supplies.

Does this MOSFET require external gate protection?

No. The STB5N80K5 integrates a bidirectional Zener diode between gate and source, clamping V_GS to ±30 V. This eliminates the need for external gate protection components in most industrial applications, though a small series resistor (10–47 Ω) is still recommended for ringing suppression.

Can STB5N80K5 replace STB6N80K5 in existing designs?

Yes, with verification. STB6N80K5 has identical 800 V rating and D²PAK package but higher 6 A ID rating and 1.25 Ω R_DS(on). STB5N80K5 may be substituted where 4 A current capability suffices, offering lower cost and same footprint-however, SOA and thermal margins must be rechecked per application load profile.

What is the recommended PCB footprint for thermal performance?

Per Figure 20 in DS11343 Rev 3, the D²PAK footprint requires a minimum 1 inch² (645 mm²) copper area with 2-oz copper thickness connected directly to the drain tab. Thermal vias (≥8×0.3 mm) beneath the tab into inner ground planes are strongly advised to achieve the rated R_thJC = 2.08 °C/W.