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STMicroelectronics STB5NK50ZT4
- Part No.:
- STB5NK50ZT4
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB5NK50ZT4.pdf
- Description:
- MOSFET N-CH 500V 4.4A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,922
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Product details
Overview
STB5NK50ZT4 from STMicroelectronics is a Zener-protected N-channel 500 V, 1.22 Ω typ., 4.4 A SuperMESH™ Power MOSFET in I²PAK (TO-220FP variant) package, designed for high-voltage switching in offline SMPS, lighting ballasts, and AC motor controls where avalanche ruggedness and dv/dt immunity are critical.
For engineers reviewing the STB5NK50ZT4 datasheet, STB5NK50ZT4 pinout, STB5NK50ZT4 application, or STB5NK50ZT4 equivalent, this device delivers verified 130 mJ single-pulse avalanche energy, 4.5 V/ns dv/dt capability, and integrated gate-source Zener protection-key selection criteria for reliable high-side switch designs in industrial power converters.
Technical Context
This MOSFET employs ST's SuperMESH™ process to reduce RDS(on) while maintaining high breakdown voltage and low intrinsic capacitance (Ciss = 535 pF, Coss = 75 pF). Its gate charge profile (Qg = 20–28 nC) enables fast switching with controlled EMI in hard-switched topologies.
The built-in back-to-back gate-source Zener diodes (±30 V breakdown) eliminate external clamping components, and its 100% avalanche-tested construction ensures robustness under unclamped inductive load conditions (EAS = 130 mJ at Tj = 25 °C).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - Withstands full mains rectified voltage (e.g., 340 V DC + margin) in universal-input offline converters. |
| RDS(on) typ. | 1.22 Ω - Enables <4.4 A continuous conduction at TC = 25 °C with ≤2.2 W conduction loss. |
| Qg | 20–28 nC - Supports efficient gate drive with standard 1-A peak drivers; reduces switching transition time. |
| EAS | 130 mJ - Guarantees single-pulse avalanche survival in flyback/LLC snubberless designs without derating. |
| dv/dt | 4.5 V/ns - Resists false turn-on during high-slew-rate transients in high-noise industrial environments. |
| Tj max | 150 °C - Allows operation in sealed enclosures or high-ambient industrial settings with thermal design headroom. |
| Coss | 75 pF - Minimizes capacitive turn-off loss and improves light-load efficiency in resonant topologies. |
Pinout & Package
I²PAK (TO-220FP variant) package with isolated tab: thermally enhanced plastic case, 3-pin through-hole mount, tab electrically connected to drain (D), rated for 2.5 kV RMS insulation between leads and heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 10 V logic-level drive; ±30 V Zener-protected against ESD and overvoltage. |
| 2 (D) | Drain | High-voltage output node; internally bonded to metal tab for direct heatsink mounting and low-inductance path. |
| 3 (S) | Source | Power return reference; forms common node with gate driver ground in high-side configurations. |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Every unit validated for 130 mJ single-pulse energy at 50 V, ensuring field reliability in inductive switching. |
| Zener-protected gate | Integrated ±30 V gate-source clamp eliminates need for external TVS, reducing BOM count and layout area. |
| SuperMESH™ technology | Optimized cell structure achieves 1.22 Ω RDS(on) at 500 V, improving conduction efficiency vs. legacy PowerMESH™. |
| Low Ciss/Coss ratio | 535 pF / 75 pF = 7.1 - Enhances voltage-dependent switching behavior for soft-recovery in quasi-resonant converters. |
| High dv/dt immunity | 4.5 V/ns rating confirmed under ISD ≤ 4.4 A, di/dt ≤ 200 A/μs - prevents spurious turn-on in noisy gate-drive paths. |
Applications
| LED Streetlight Driver | Industrial AC Motor Starter |
|---|---|
|
Use Scenario: High-efficiency constant-current LED driver operating from 230 V AC mains with active PFC and flyback topology. IC Role / Device Role / Timing Role: Main switching transistor in primary-side flyback converter; handles 500 V blocking and 4.4 A peak current. Use Value: Avalanche ruggedness (130 mJ) allows elimination of snubber circuits, reducing component count and thermal stress. |
Use Scenario: Solid-state relay for 3-phase induction motor control in HVAC systems with frequent start-stop cycles. IC Role / Device Role / Timing Role: High-side switch in phase-leg configuration; commutates 4.4 A motor current with 500 V clearance. Use Value: 4.5 V/ns dv/dt immunity prevents false triggering during rapid bus voltage transitions in motor PWM waveforms. |
| Universal Input SMPS | Electronic Ballast for HID Lamps |
|
Use Scenario: 65 W offline SMPS supporting 85–265 V AC input with QR flyback architecture. IC Role / Device Role / Timing Role: Primary-side power switch synchronized to zero-voltage switching transitions. Use Value: Low Qg (20–28 nC) enables precise timing control with minimal gate drive power loss. |
Use Scenario: High-frequency electronic ballast driving 70 W metal halide lamp with resonant ignition. IC Role / Device Role / Timing Role: Half-bridge upper switch handling 500 V DC link and lamp ignition surges. Use Value: Integrated gate Zener (±30 V) withstands gate ringing during high-dV/dt lamp striking without external protection. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STD5NK50ZT4 | DPAK package (TO-252), lower Rthj-case = 5 °C/W vs. I²PAK's 1.78 °C/W; same 500 V/4.4 A rating and SuperMESH™ die. | Better suited for surface-mount PCBs with limited height; requires thermal pad layout per DPAK footprint. | Select when board space constraints preclude through-hole mounting or when automated assembly is required. |
| STP5NK50Z | TO-220 package, Rthj-case = 1.78 °C/W (same as STB5NK50ZT4), but non-isolated tab (no 2.5 kV insulation rating). | Requires insulating washer for heatsink mounting; unsuitable for safety-critical isolation requirements. | Choose only in cost-sensitive, non-isolated applications where creepage/clearance compliance is not mandated. |
Compared with STD5NK50ZT4 and STP5NK50Z, STB5NK50ZT4 uniquely combines I²PAK mechanical robustness, isolated-tab safety (2.5 kV RMS), and identical SuperMESH™ die performance-making it optimal for certified industrial power supplies requiring reinforced insulation and high-reliability mounting.
Availability
STB5NK50ZT4 is available at Aetrix Electronics and suitable for offline SMPS, LED drivers, and industrial motor controls requiring stable component supply, long-lifecycle support, and traceable sourcing for UL/IEC-certified designs.
Supply support for STB5NK50ZT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.
STB5NK50ZT4 belongs to the SuperMESH™ Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 500 V industrial power conversion systems where avalanche capability and gate protection are mandatory.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The maximum continuous drain current (ID) at TC = 100 °C is 2.7 A, as specified in Table 1 of DS2834 Rev 6. This value reflects thermal derating due to junction-to-case thermal resistance (1.78 °C/W) and maximum junction temperature limit (150 °C), ensuring safe operation under sustained high-temperature conditions.
Does STB5NK50ZT4 require an external gate resistor for ESD protection?
No external gate resistor is required for ESD protection because STB5NK50ZT4 integrates back-to-back Zener diodes between gate and source with ±30 V breakdown voltage, validated per human-body model (HBM) testing at 3 kV. The internal clamping fully satisfies IEC 61000-4-2 Level 3 requirements without added components.
Can STB5NK50ZT4 be used in synchronous rectification topologies?
No-STB5NK50ZT4 is a standard-threshold N-channel MOSFET with VGS(th) = 3.0–4.5 V and no integrated body diode optimization for reverse conduction. It lacks the low forward voltage and fast recovery characteristics required for synchronous rectifier operation; dedicated SR controllers and logic-level FETs are recommended instead.
What is the safe operating area (SOA) limitation at 250 V drain-source voltage?
At VDS = 250 V, the SOA limits continuous drain current to approximately 2.2 A for pulse widths > 10 ms (Figure 1, DS2834 Rev 6), constrained by thermal dissipation (PTOT = 70 W) and second breakdown. For pulsed operation up to 100 µs, peak current reaches 17.6 A (IDM), provided duty cycle remains below 1.5%.
STB5NK50ZT4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- SuperMESH™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.5Ohm @ 2.2A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs:
- 28 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 535 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 70W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
STB5NK50ZT4 FAQ
1.How can I place an order for STB5NK50ZT4 through Aetrix?
Please submit a Request for Quotation (RFQ) for STB5NK50ZT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB5NK50ZT4 reliable?
The price and inventory of STB5NK50ZT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB5NK50ZT4 is usually 5 days.
3.What payment methods are accepted for STB5NK50ZT4?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB5NK50ZT4 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB5NK50ZT4?
STB5NK50ZT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB5NK50ZT4 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB5NK50ZT4?
For technical support, including STB5NK50ZT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB5NK50ZT4 requirements.
6.How does Aetrix verify that STB5NK50ZT4 is sourced from the original manufacturer or authorized distributors?
All STB5NK50ZT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB5NK50ZT4 meets industry standards.
7.What is the process for return or replacement of STB5NK50ZT4?
All STB5NK50ZT4 units undergo pre-shipment inspection (PSI). If there is an issue with STB5NK50ZT4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB5NK50ZT4 part is unused and in its original packaging.
Return procedure for STB5NK50ZT4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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