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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB60N55F3

Name: STB60N55F3
Brand: STMicroelectronics
SKU: STB60N55F3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB60N55F3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB60N55F3.pdf

Description:: MOSFET N-CH 55V 80A D2PAK

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Product details

Overview

STB60N55F3 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in D²PAK (TO-263) package, rated for 55 V drain-source voltage, 6.5 mΩ typical R_DS(on) at V_GS = 10 V, 80 A continuous drain current at T_C = 25°C, and 110 W total power dissipation. It serves as a high-current, low-loss switching element in DC-DC converters, motor drives, and industrial power supplies.

For engineers reviewing the STB60N55F3 datasheet, STB60N55F3 pinout, STB60N55F3 application, or STB60N55F3 equivalent, key selection criteria include its 55 V breakdown rating, sub-8.5 mΩ on-resistance, 100% avalanche-tested ruggedness, gate threshold compatibility with standard 10 V logic drivers, and thermal resistance of 1.36 °C/W (junction-to-case).

Technical Context

This STripFET™ III device uses trench-gate vertical DMOS architecture optimized for low R_DS(on) × Q_g figure-of-merit, enabling fast switching with reduced conduction and gate-drive losses. Its 100% unclamped inductive switching (UIS) tested avalanche capability supports robust operation under transient overloads.

The MOSFET features a built-in source-drain diode with 80 A continuous forward current rating, 47 ns reverse recovery time (t_rr) at T_j = 150°C, and 3.7 A peak reverse recovery current - critical for synchronous rectification and freewheeling in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche onset; defines usable input voltage range in buck/boost stages.
R_DS(on)	6.5 mΩ (typ), <8.5 mΩ (max) at V_GS = 10 V - Enables ≤5.2 W conduction loss at 80 A, critical for thermal management in high-current PCB layouts.
I_D (cont)	80 A at T_C = 25°C - Supports high-power load switching without external parallel devices in compact heatsink designs.
E_AS	390 mJ single-pulse avalanche energy - Guarantees survivability during inductive turn-off transients up to 32 A, 25 V conditions.
Q_g	33.5 nC (typ) - Determines gate driver current requirement (~7 mA avg. for 100 kHz switching with 10 V swing); balances speed vs. drive complexity.
t_r/t_f	20 ns / 11.5 ns (typ) - Enables <100 ns total switching transition, reducing overlap loss in high-frequency SMPS designs.
R_thj-case	1.36 °C/W max - Allows ~80 W power dissipation with ≤110°C case temperature rise above ambient, supporting direct-mount heatsinking.

Pinout & Package

STB60N55F3 is housed in a surface-mount D²PAK (TO-263) package with three terminals: Gate (G), Drain (D), and Source (S). The exposed drain pad provides low-inductance, high-current path and primary thermal conduction to the PCB copper plane.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives 10 V logic-level signal to fully enhance channel; requires <45 nC total charge for full turn-on.
2 (Drain)	High-side power terminal	Connected to main power rail; electrically tied to large copper pour for thermal and current handling; not isolated from heatsink.
3 (Source)	Reference and return path	Serves as local ground reference for gate drive; carries full load current back to supply; must be low-impedance PCB trace.

Key Features

Feature	Design Value
STripFET™ III technology	Reduces R_DS(on) × Q_g by >30% vs. prior generation, enabling higher efficiency at 100–500 kHz switching frequencies.
Standard threshold drive	V_GS(th) = 2–4 V ensures full enhancement with common 5 V or 10 V microcontroller/GPIO outputs without level-shifting.
100% avalanche tested	Each unit validated for UIS stress up to 390 mJ, eliminating need for external snubbers in inductive load circuits.
Low gate charge	Q_gd = 9.5 nC minimizes Miller plateau duration, improving immunity to dv/dt-induced false turn-on in high-side configurations.
Enhanced diode performance	t_rr = 47 ns and Q_rr = 87 nC reduce switching loss and EMI in synchronous rectifier applications.

Applications

Motor Drive Inverter Stage

DC-DC Synchronous Buck Converter

Use Scenario: High-current half-bridge leg driving 24–48 V BLDC motors in industrial automation.

IC Role / Device Role / Timing Role: Low-side switching element handling 60–80 A peak phase current with 10–50 kHz PWM.

Use Value: 6.5 mΩ R_DS(on) limits conduction loss to <3.2 W at 80 A, enabling air-cooled operation without forced airflow.

Use Scenario: Primary switch in 12 V input → 1.2 V/60 A output VRM for server CPU power delivery.

IC Role / Device Role / Timing Role: High-efficiency synchronous rectifier replacement for Schottky diode in secondary side.

Use Value: 1.5 V V_SD forward drop and 47 ns t_rr cut body-diode conduction loss by >60% vs. discrete diode solution.

Industrial UPS Output Stage

Automotive DC Load Switch

Use Scenario: Bidirectional 48 V battery backup system with active OR-ing and short-circuit protection.

IC Role / Device Role / Timing Role: Main power path switch with integrated avalanche ruggedness for fault containment.

Use Value: 390 mJ E_AS withstands 10 ms short-circuit events at full bus voltage, eliminating need for fuse coordination.

Use Scenario: Smart high-side load switch controlling 12 V cabin lighting or HVAC actuators.

IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relay with programmable current limiting.

Use Value: Standard 10 V gate drive enables direct interface with automotive MCU GPIOs; TO-263 footprint simplifies automated assembly.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PbF	R_DS(on) = 4 mΩ (lower), but V_DSS = 40 V and no avalanche rating specified.	Limited to ≤40 V systems; unsuitable for 48 V nominal or surge-prone industrial rails.	Select only if operating voltage stays below 36 V and avalanche robustness is not required.
IXTH80N55L2	R_DS(on) = 10.5 mΩ (higher), but rated for 550 V and includes enhanced avalanche rating (E_AS = 1.2 J).	Over-specified voltage rating increases cost and gate charge; better suited for HV flyback or PFC.	Prefer when system requires >100 V transient immunity or multi-kilovolt isolation barriers.

Compared with IRF1404PbF and IXTH80N55L2, STB60N55F3 delivers optimal balance of 55 V rating, 6.5 mΩ conduction loss, and guaranteed avalanche ruggedness - making it the most suitable choice for 48 V industrial switching where reliability and thermal efficiency are co-prioritized.

Availability

STB60N55F3 is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, uninterruptible power systems, and automotive body electronics requiring stable component supply and long-term manufacturing continuity.

Supply support for STB60N55F3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and consumer markets.

The STripFET™ III Power MOSFET product line targets high-efficiency, high-reliability power conversion in space-constrained applications - emphasizing low R_DS(on), fast switching, and ruggedness across 30–150 V voltage classes.

FAQ

What is the maximum safe operating temperature for STB60N55F3?

The STB60N55F3 has a maximum junction temperature (T_j) of 175°C and a storage temperature range of –55°C to +175°C. When mounted on a 1-inch² FR-4 board with 2 oz copper, its junction-to-ambient thermal resistance is 50°C/W; derating begins above 25°C ambient, with full power (110 W) only sustainable at T_C ≤ 25°C.

Does STB60N55F3 require a gate resistor for stability?

Yes - a gate series resistor (typically 4.7 Ω) is recommended to dampen ringing and control dV/dt during switching, especially in high-current or high-frequency applications. This value is validated in the datasheet's Figure 18 test circuit and helps prevent spurious turn-on caused by Miller capacitance coupling.

Can STB60N55F3 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (shown in Figure 9 of the datasheet) enables inherent current sharing when paralleled. However, layout symmetry (matched gate and source inductance) and individual gate resistors are mandatory to ensure balanced dynamic current distribution and avoid thermal runaway.

Is STB60N55F3 RoHS and REACH compliant?

Yes - STB60N55F3 is manufactured in STMicroelectronics' ECOPACK®-compliant D²PAK package, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. Lead-free soldering is supported with peak temperature up to 260°C for 10 seconds, per JEDEC J-STD-020.

STB60N55F3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ III

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8.5mOhm @ 32A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB60N55F3 FAQ

1.How can I place an order for STB60N55F3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB60N55F3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB60N55F3 reliable?

The price and inventory of STB60N55F3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB60N55F3 is usually 5 days.

3.What payment methods are accepted for STB60N55F3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB60N55F3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB60N55F3?

STB60N55F3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB60N55F3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB60N55F3?

For technical support, including STB60N55F3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB60N55F3 requirements.

6.How does Aetrix verify that STB60N55F3 is sourced from the original manufacturer or authorized distributors?

All STB60N55F3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB60N55F3 meets industry standards.

7.What is the process for return or replacement of STB60N55F3?

All STB60N55F3 units undergo pre-shipment inspection (PSI). If there is an issue with STB60N55F3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB60N55F3 part is unused and in its original packaging.

Return procedure for STB60N55F3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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