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STMicroelectronics STB60NE06L-16T4
- Part No.:
- STB60NE06L-16T4
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB60NE06L-16T4.pdf
- Description:
- MOSFET N-CH 60V 60A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,232
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Product details
Overview
STB60NE06L-16T4 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in D2PAK package, rated for 60 V drain-source voltage, 60 A continuous drain current at 25°C, and 0.014 Ω typical RDS(on) at VGS = 5 V. It features avalanche ruggedness, low gate charge (55 nC), and 175 °C maximum junction temperature - deployed in high-current DC-DC converter primary switches and motor drive half-bridges.
For engineers reviewing the STB60NE06L-16T4 datasheet, STB60NE06L-16T4 pinout, STB60NE06L-16T4 application, or STB60NE06L-16T4 equivalent, key selection criteria include verified RDS(on) at 5 V gate drive, unclamped inductive switching capability (EAS = 400 mJ), thermal resistance (Rthj-case = 0.83 °C/W), and D2PAK mechanical compatibility with TO-263 footprint.
Technical Context
This device uses ST's STripFET™ II process with single-feature-size strip geometry to achieve high cell density and low on-resistance while maintaining robust avalanche performance. Its gate threshold voltage (1.0–2.5 V) enables direct logic-level drive from 3.3 V/5 V microcontrollers without level-shifting.
The internal body diode exhibits 1.3 V forward voltage at 60 A and 85 ns reverse recovery time under harsh conditions (di/dt = 100 A/µs, Tj = 150 °C), supporting synchronous rectification and freewheeling in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - supports 48 V nominal bus systems with 20 % margin for transients |
| RDS(on) | 0.014 Ω (typ) at VGS = 5 V - enables <1 W conduction loss at 60 A in compact thermal designs |
| ID (cont) | 60 A at TC = 25 °C - requires heatsink for sustained >42 A operation above 100 °C case temperature |
| EAS | 400 mJ - withstands single-pulse inductive energy without failure in unclamped switching |
| Qg | 55 nC - determines gate driver power requirement and switching speed trade-off |
| Rthj-case | 0.83 °C/W - defines minimum heatsink thermal resistance needed to maintain Tj ≤ 175 °C |
| Tj(max) | 175 °C - allows operation in high-ambient industrial environments without derating |
Pinout & Package
Supplied in D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. Package complies with ECOPACK® environmental standards and JEDEC MO-211AB mechanical outline.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal | Low-side reference node; connects to PCB ground plane for thermal and EMI control |
| Pin 2 (Gate) | Control input | High-impedance MOSFET gate requiring <100 nA leakage; sensitive to ESD |
| Pin 3 (Drain) | Power output | Exposed copper pad - electrically and thermally tied to drain; must be soldered to large copper area |
Key Features
| Feature | Design Value |
|---|---|
| Avalanche rugged technology | Rated for 400 mJ single-pulse unclamped inductive energy - eliminates need for external snubbers in relay/motor drive circuits |
| Low gate charge | 55 nC total gate charge - reduces driver losses and enables faster turn-on/turn-off with standard gate drivers |
| High current capability | 60 A continuous at 25 °C case temperature - supports high-power switching in space-constrained PCB layouts |
| 175 °C operating temperature | Maximum junction temperature rating - ensures reliability in sealed enclosures or high-ambient automotive under-hood applications |
Applications
| Motor Drive Half-Bridge | DC-DC Converter Primary Switch |
|---|---|
Use Scenario: High-current BLDC motor phase leg in 24–48 V industrial actuators. IC Role / Device Role / Timing Role: Low-side switch in asymmetric half-bridge configuration with external high-side driver. Use Value: 0.014 Ω RDS(on) minimizes I²R losses during 60 A peak phase currents, reducing heatsink size by 35 % vs. comparable 0.022 Ω devices. | Use Scenario: Primary-side switch in isolated 500 W flyback or forward converter for telecom power supplies. IC Role / Device Role / Timing Role: Main power switch handling 60 A pulsed drain current with 240 A peak surge capability. Use Value: 400 mJ EAS rating prevents failure during output short-circuit events without added clamping circuitry. |
| Automotive HVAC Blower Control | Industrial Solenoid Driver |
Use Scenario: PWM-controlled blower motor in vehicle cabin climate systems. IC Role / Device Role / Timing Role: Ground-referenced power switch driven directly by 5 V MCU GPIO with integrated gate resistor. Use Value: 1.6 V typical VGS(th) ensures full enhancement at 5 V logic levels, eliminating need for external level shifters. | Use Scenario: High-duty-cycle solenoid actuation in factory automation valves. IC Role / Device Role / Timing Role: Low-impedance current sink enabling fast de-energization via controlled diode recovery. Use Value: 85 ns trr and 300 nC Qrr reduce turn-off delay and voltage overshoot during rapid current decay. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFZ44NPBF | RDS(on) = 0.028 Ω @ 10 V; higher gate charge (71 nC); TO-220 package | Limited to lower-current (<40 A) designs; requires larger heatsink due to higher RDS(on) | Choose when legacy TO-220 mounting is required and 5 V gate drive is not needed. |
| STP60NF06 | Same VDS/ID ratings but TO-220 package; RDS(on) = 0.014 Ω @ 10 V only (not at 5 V) | Not logic-level compatible - requires ≥10 V gate drive; unsuitable for 3.3 V/5 V MCU direct drive | Prefer only if board layout mandates through-hole mounting and gate drive voltage ≥10 V is available. |
Compared with IRFZ44NPBF and STP60NF06, STB60NE06L-16T4 uniquely delivers 5 V logic-level turn-on, D2PAK thermal performance, and avalanche-rated ruggedness - making it optimal for compact, high-reliability, surface-mount motor and power supply designs where gate drive voltage and board space are constrained.
Availability
STB60NE06L-16T4 is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and industrial solenoid controllers requiring stable component supply and long-term production continuity.
Supply support for STB60NE06L-16T4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and consumer markets.
This part belongs to ST's STripFET™ II Power MOSFET product line, engineered specifically for high-efficiency, high-current switching in space-constrained industrial and automotive power systems.
FAQ
Is STB60NE06L-16T4 suitable for 3.3 V microcontroller gate drive?
Yes. With a gate threshold voltage range of 1.0–2.5 V and guaranteed RDS(on) of 0.016 Ω at VGS = 5 V, it fully enhances using 3.3 V logic outputs when paired with appropriate gate resistor and layout practices to minimize Miller-induced shoot-through.
What is the maximum safe operating frequency for this MOSFET in hard-switched applications?
Based on its 55 nC gate charge and 220 ns fall time (with RG = 4.7 Ω), practical hard-switching frequencies are limited to ≤100 kHz for efficient thermal management. Above this, switching losses dominate, requiring active cooling or reduced duty cycle to maintain Tj ≤ 175 °C.
Does STB60NE06L-16T4 have built-in ESD protection?
No. The device has no integrated ESD protection diodes. Gate oxide is rated for ±15 V absolute maximum VGS; therefore, external TVS or RC snubber networks are recommended at the gate input in automated assembly or high-noise environments to prevent electrostatic damage.
Can this MOSFET replace STP60NF06 in existing TO-220 designs?
Not directly. While electrically similar, STB60NE06L-16T4 uses D2PAK (TO-263) packaging - incompatible with TO-220 footprints. Board redesign is required for pad layout, thermal relief, and mounting. Electrical substitution is viable only after verifying gate drive compatibility and thermal interface design.
STB60NE06L-16T4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- STripFET™ II
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 14mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 70 nC @ 4.5 V
- Vgs (Max):
- ±15V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4150 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
STB60NE06L-16T4 FAQ
1.How can I place an order for STB60NE06L-16T4 through Aetrix?
Please submit a Request for Quotation (RFQ) for STB60NE06L-16T4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB60NE06L-16T4 reliable?
The price and inventory of STB60NE06L-16T4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB60NE06L-16T4 is usually 5 days.
3.What payment methods are accepted for STB60NE06L-16T4?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB60NE06L-16T4 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB60NE06L-16T4?
STB60NE06L-16T4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB60NE06L-16T4 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB60NE06L-16T4?
For technical support, including STB60NE06L-16T4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB60NE06L-16T4 requirements.
6.How does Aetrix verify that STB60NE06L-16T4 is sourced from the original manufacturer or authorized distributors?
All STB60NE06L-16T4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB60NE06L-16T4 meets industry standards.
7.What is the process for return or replacement of STB60NE06L-16T4?
All STB60NE06L-16T4 units undergo pre-shipment inspection (PSI). If there is an issue with STB60NE06L-16T4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB60NE06L-16T4 part is unused and in its original packaging.
Return procedure for STB60NE06L-16T4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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