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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB60NF06T4

Name: STB60NF06T4
Brand: STMicroelectronics
SKU: STB60NF06T4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB60NF06T4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB60NF06T4.pdf

Description:: MOSFET N-CH 60V 60A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:1,683

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Product details

Overview

STB60NF06T4 from STMicroelectronics is an N-channel 60 V, 60 A, 0.015 Ω (typ) D2PAK Power MOSFET optimized for high-efficiency isolated DC-DC converters in telecom and computing power supplies. It features 100% avalanche testing, exceptional dv/dt capability (4 V/ns), and low gate charge (49 nC), enabling robust primary-side switching with minimal drive loss.

For engineers reviewing the STB60NF06T4 datasheet, STB60NF06T4 pinout, STB60NF06T4 application, or STB60NF06T4 equivalent, key selection criteria include R_DS(on) stability over temperature, unclamped inductive switching ruggedness, source-drain diode recovery performance (t_rr = 73 ns), and thermal resistance (R_thj-case = 1.36 °C/W) for high-power density designs.

Technical Context

This STripFET™ II device uses a planar vertical structure to minimize input capacitance (C_iss = 1810 pF) and gate charge while maintaining high current handling. Its SOA is characterized up to T_j = 175 °C with pulsed ID of 240 A, supporting hard-switched topologies.

The integrated body diode is specified for fast recovery (Q_rr = 182 nC, I_RRM = 5 A) under high di/dt (100 A/µs) and elevated junction temperature (150 °C), making it suitable for synchronous rectification and freewheeling in resonant and phase-shifted full-bridge converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for primary-side switch in ≤48 V input DC-DC systems
R_DS(on)	0.015 Ω (typ) at V_GS = 10 V, I_D = 30 A - Enables <1 W conduction loss at 60 A continuous drain current
Q_g	49 nC - Low gate drive energy reduces controller IC loading and switching loss in high-frequency operation
dv/dt	4 V/ns - Confirmed immunity to parasitic turn-on in high-noise, fast-edge converter environments
E_AS	360 mJ - Single-pulse avalanche energy rating supports reliable operation during transient overvoltage events
R_thj-case	1.36 °C/W - Enables direct heatsink mounting for >100 W dissipation without forced air cooling
t_rr	73 ns - Fast body diode recovery minimizes switching losses and EMI in hard-commutated topologies

Pinout & Package

D2PAK (TO-263) package: surface-mount, single-die, three-terminal power package with exposed drain pad for thermal and electrical connection to PCB heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal	Low-side reference node; connected to power ground plane; carries full load current
2 (Gate)	Control input	High-impedance MOSFET control node requiring low-inductance gate driver routing
3 (Drain)	Power output / High-side switch node	Exposed metal pad - electrically and thermally connected to drain; must be soldered to large copper area

Key Features

Feature	Design Value
STripFET™ II process	Reduces C_iss by ~25% vs. first-generation STripFET, improving switching efficiency at 300–500 kHz
100% avalanche tested	Each unit validated for repetitive and non-repetitive avalanche stress, eliminating need for external snubbers in flyback designs
ECOPACK® compliant	Lead-free second-level interconnect and RoHS-compliant finish for industrial and telecom manufacturing
Enhanced dv/dt immunity	Rated 4 V/ns with I_SD ≤ 60 A and di/dt ≤ 400 A/µs - prevents false triggering in high-slew-rate gate drive circuits

Applications

Telecom AC-DC Front-End

Server VRM Primary Switch

Use Scenario: 3 kW distributed power architecture with active clamp forward topology operating at 250 kHz.

IC Role / Device Role / Timing Role: Primary-side main switch handling 60 A peak current and 60 V bus voltage.

Use Value: Low Q_g and R_DS(on) reduce total switching + conduction loss to <2.1 W, enabling >95% efficiency at full load.

Use Scenario: 12 V input, 1.2 V/200 A output multiphase buck converter in AI accelerator server PSU.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch in interleaved phase leg.

Use Value: Fast t_rr and low Q_rr cut body-diode conduction loss by 38% versus standard trench MOSFETs.

Industrial Motor Drive Inverter

EV Onboard Charger PFC Stage

Use Scenario: 7.5 kW variable frequency drive using six-pack IGBT replacement with discrete MOSFET half-bridges.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter leg, commutating 60 A RMS motor current.

Use Value: R_thj-case = 1.36 °C/W allows direct heatsink mounting without thermal interface material, reducing assembly cost.

Use Scenario: Two-switch forward PFC stage in 6.6 kW bidirectional OBC, switching at 100 kHz.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC with 60 A peak inductor current.

Use Value: E_AS = 360 mJ ensures reliable operation during line-voltage surges without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ44NPBF	R_DS(on) = 0.028 Ω (higher), Q_g = 67 nC (higher), no avalanche rating	Limited to lower-frequency (<100 kHz), lower-power applications due to higher losses and no avalanche test	Acceptable only where cost is critical and thermal margin exceeds 40 °C
STP60NF06	Same die, TO-220 package; R_thj-case = 1.5 °C/W (slightly higher); identical electrical specs	Suitable for prototyping or low-volume through-hole assembly; not surface-mount compatible	Preferred for manual assembly or legacy board rework; same electrical behavior but different thermal path

Compared with IRFZ44NPBF and STP60NF06, STB60NF06T4 delivers superior thermal performance (1.36 °C/W), guaranteed avalanche ruggedness, and lower gate drive demand-critical for high-density, high-reliability telecom and server power stages.

Availability

STB60NF06T4 is available at Aetrix Electronics and suitable for telecom AC-DC front-ends, server VRM primary switches, and industrial motor drive inverters requiring stable component supply and long-term production support.

Supply support for STB60NF06T4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STB60NF06T4 belongs to the STripFET™ II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability DC-DC conversion in space-constrained telecom and computing infrastructure.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The STB60NF06T4 supports 42 A continuous drain current at T_C = 100 °C, per Absolute Maximum Ratings Table 1. This derating reflects thermal limits of the D2PAK package and ensures safe operation within its 110 W total dissipation envelope at 25 °C case temperature.

Is the body diode suitable for synchronous rectification?

Yes-the source-drain diode is characterized for fast recovery (t_rr = 73 ns, Q_rr = 182 nC) under high di/dt (100 A/µs) and high junction temperature (150 °C), making it viable for synchronous rectification in phase-shifted full-bridge and LLC resonant converters up to 300 kHz.

Does STB60NF06T4 require gate resistors for stability?

Yes-a series gate resistor (typically 4.7 Ω, per Figure 12 test circuit) is recommended to dampen ringing, control switching speed, and prevent oscillation. The low gate threshold (2–4 V) and 18 nC Q_gs make it sensitive to PCB layout parasitics; proper gate loop minimization is essential.

Can STB60NF06T4 replace STB60NF06-1 in existing designs?

Yes-both share identical electrical specifications and STripFET™ II die. The only difference is packaging: STB60NF06T4 is D2PAK in tape-and-reel, while STB60NF06-1 is I2PAK in tube. Thermal resistance differs slightly (D2PAK: 1.36 °C/W; I2PAK: 1.5 °C/W), so verify heatsink adequacy if substituting in thermally constrained layouts.

STB60NF06T4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ II

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 16mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1810 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -65°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB60NF06T4 FAQ

1.How can I place an order for STB60NF06T4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB60NF06T4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB60NF06T4 reliable?

The price and inventory of STB60NF06T4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB60NF06T4 is usually 5 days.

3.What payment methods are accepted for STB60NF06T4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB60NF06T4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB60NF06T4?

STB60NF06T4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB60NF06T4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB60NF06T4?

For technical support, including STB60NF06T4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB60NF06T4 requirements.

6.How does Aetrix verify that STB60NF06T4 is sourced from the original manufacturer or authorized distributors?

All STB60NF06T4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB60NF06T4 meets industry standards.

7.What is the process for return or replacement of STB60NF06T4?

All STB60NF06T4 units undergo pre-shipment inspection (PSI). If there is an issue with STB60NF06T4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB60NF06T4 part is unused and in its original packaging.

Return procedure for STB60NF06T4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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