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STMicroelectronics STB60NF10-1
- Part No.:
- STB60NF10-1
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
STB60NF10-1.pdf
- Description:
- MOSFET N-CH 100V 80A I2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,950
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Product details
Overview
STB60NF10-1 from STMicroelectronics is an N-channel 100 V, 80 A, 0.019 Ω RDS(on) Power MOSFET in I²PAK (TO-262) package, designed for high-frequency primary-side switching in telecom and server DC-DC converters, featuring 100% avalanche testing, 16 V/ns dv/dt capability, and low gate charge (104 nC).
For engineers reviewing the STB60NF10-1 datasheet, STB60NF10-1 pinout, STB60NF10-1 application, or STB60NF10-1 equivalent, this page delivers verified electrical ratings, thermal resistance (0.5 °C/W RthJC), diode recovery specs (92 ns trr, 340 nC Qrr), and package mechanical data specific to the I²PAK variant.
Technical Context
This STripFET™ II MOSFET employs a planar vertical structure optimized for reduced input capacitance (Ciss = 4270 pF) and gate charge, enabling efficient operation above 100 kHz in isolated flyback and forward converters. Its 485 J single-pulse avalanche energy rating supports robust unclamped inductive switching.
The device operates with gate threshold voltage of 2–4 V and exhibits stable RDS(on) up to 150 °C junction temperature. Its source-drain diode has 1.3 V forward voltage at 80 A and 7.4 A peak reverse recovery current under defined di/dt conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Maximum drain-source blocking voltage for primary-side switch in 48 V telecom input systems |
| RDS(on) max | 0.023 Ω - Confirmed on-resistance at VGS = 10 V, ID = 40 A, defining conduction loss in high-current paths |
| ID continuous | 80 A at TC = 25 °C - Continuous drain current rating under heatsink-cooled conditions |
| Qg | 104 nC - Total gate charge determining driver strength requirement and switching loss trade-off |
| tr/tf | 56 ns / 23 ns - Rise/fall times at VDD = 50 V, ID = 40 A, RG = 4.7 Ω, critical for EMI control |
| EAS | 485 J - Single-pulse avalanche energy at TJ = 25 °C, ID = 40 A, VDD = 30 V, enabling ruggedness in transient overloads |
| RthJC | 0.5 °C/W - Junction-to-case thermal resistance, directly usable for heatsink sizing in forced-air or conduction-cooled designs |
Pinout & Package
I²PAK (TO-262) package: 3-pin through-hole outline with isolated tab, ECOPACK® lead-free construction, maximum lead temperature 300 °C for soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Drain) | Main power path collector | Internally connected to metal tab; requires insulated mounting when tab is not at system ground potential |
| 2 (Gate) | Control input | High-impedance MOS gate requiring <104 nC charge for full enhancement; sensitive to ESD |
| 3 (Source) | Power return reference | Common node for gate drive return and load current return; defines local ground reference for driver circuitry |
Key Features
| Feature | Design Value |
|---|---|
| STripFET™ II process | Reduces Ciss by ~25% vs. first-gen STripFET, lowering capacitive switching losses at 250 kHz+ |
| 100% avalanche tested | Guarantees minimum 485 J EAS per unit, eliminating need for external snubbers in clamp-free topologies |
| 16 V/ns dv/dt immunity | Prevents spurious turn-on during fast voltage transients in high-side configurations without active Miller clamping |
| Low Qgd/Qg ratio | 32/104 nC = 31% - Enables clean Miller plateau transition and reduces risk of shoot-through in half-bridge layouts |
| ECOPACK® compliance | Lead-free second-level interconnect with JEDEC JESD97 marking; RoHS and WEEE compliant without performance compromise |
Applications
| Telecom DC-DC Converters | Server VRM Primary Switch |
|---|---|
|
Use Scenario: Primary-side switch in 300–400 V input, 12 V output isolated forward converter for 48 V telecom shelf power. IC Role / Device Role / Timing Role: High-side power switch operating at 200–300 kHz with synchronous rectification on secondary side. Use Value: 0.019 Ω RDS(on) and 104 nC Qg enable >94% efficiency at 80 A load while maintaining thermal margin below 100 °C case temperature. |
Use Scenario: Main switching element in multiphase buck-derived VRM supplying CPU core voltage in enterprise servers. IC Role / Device Role / Timing Role: Low-side switch in interleaved topology with gate drive synchronized to PWM controller timing signals. Use Value: 16 V/ns dv/dt rating prevents false triggering during adjacent phase commutation, reducing timing skew and current imbalance. |
| Industrial Motor Drives | UPS Inverter Stages |
|
Use Scenario: Half-bridge leg in 1–3 kW variable frequency drive for HVAC compressors and pumps. IC Role / Device Role / Timing Role: Fast-switching power stage component handling 60–80 A peak motor currents with 10 kHz PWM carrier. Use Value: 485 J EAS withstands regenerative energy spikes during rapid deceleration without external clamping diodes. |
Use Scenario: Output H-bridge switch in online double-conversion UPS delivering clean 230 VAC sine wave during grid failure. IC Role / Device Role / Timing Role: High-reliability power switch managing bidirectional energy flow between battery bank and inverter transformer. Use Value: 0.5 °C/W RthJC allows direct mounting to aluminum chassis, eliminating discrete heatsinks and reducing system footprint by 35%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V Power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP60NF10 | Same die, TO-220 package; RthJC = 0.5 °C/W identical, but lower creepage/clearance and no isolated tab | Preferred for cost-sensitive, non-isolated, PCB-mounted designs where heatsink attachment is via screw and insulator | Select when mechanical mounting constraints favor TO-220 footprint and isolation is managed externally |
| IRFP460LC | 100 V, 20 A, 0.27 Ω RDS(on), higher Qg (140 nC); different process (HEXFET®), not avalanche rated | Suitable only for lower-current (<30 A), lower-frequency (<100 kHz) applications due to higher conduction and switching losses | Choose only if legacy design reuse mandates IR footprint compatibility and thermal budget permits 3× higher RDS(on) |
Compared with STP60NF10, STB60NF10-1 offers identical silicon performance with enhanced isolation and thermal interface flexibility via I²PAK's isolated tab; versus IRFP460LC, it delivers 14× lower RDS(on) and guaranteed avalanche ruggedness-critical for modern high-density power stages.
Availability
STB60NF10-1 is available at Aetrix Electronics and suitable for telecom power supplies, server VRMs, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable ECOPACK® compliance.
Supply support for STB60NF10-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.
STB60NF10-1 belongs to the STripFET™ II Power MOSFET product line, engineered specifically to minimize gate charge and input capacitance for high-efficiency, high-frequency DC-DC conversion in space-constrained telecom and computing infrastructure.
FAQ
What is the maximum safe operating temperature for STB60NF10-1?
The STB60NF10-1 has a maximum junction temperature (TJ) of 175 °C and storage temperature range of –55 to +175 °C. Its RthJC is 0.5 °C/W, so with 300 W total dissipation at TC = 25 °C, case temperature must be held ≤ 100 °C to maintain TJ ≤ 175 °C. Derating is 2 W/°C above 25 °C case temperature.
Does STB60NF10-1 require a gate resistor for stability?
Yes - a gate resistor (typically 4.7 Ω, as used in the datasheet switching test circuit) is required to dampen ringing caused by gate loop inductance and Ciss/Crss interaction. Without it, overshoot and oscillation during turn-on/turn-off can exceed ±20 V VGS rating and cause premature failure.
Can STB60NF10-1 replace STP60NF10 in existing TO-220 layouts?
No - STB60NF10-1 uses I²PAK (TO-262) packaging with different pin spacing (e.g., 2.4 mm e1 pitch vs. TO-220's 2.54 mm), larger body dimensions, and isolated metal tab. Direct replacement requires PCB redesign, heatsink adaptation, and verification of creepage/clearance compliance.
Is the source-drain diode suitable for synchronous rectification?
No - the intrinsic body diode has 1.3 V forward voltage at 80 A and 92 ns reverse recovery time, resulting in high conduction and recovery losses. It is not optimized for synchronous rectification; external Schottky or MOSFET-based synchronous rectifiers are required for high-efficiency designs.
STB60NF10-1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- STripFET™ II
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 23mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 104 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4270 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- I2PAK
STB60NF10-1 FAQ
1.How can I place an order for STB60NF10-1 through Aetrix?
Please submit a Request for Quotation (RFQ) for STB60NF10-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB60NF10-1 reliable?
The price and inventory of STB60NF10-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB60NF10-1 is usually 5 days.
3.What payment methods are accepted for STB60NF10-1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB60NF10-1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB60NF10-1?
STB60NF10-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB60NF10-1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB60NF10-1?
For technical support, including STB60NF10-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB60NF10-1 requirements.
6.How does Aetrix verify that STB60NF10-1 is sourced from the original manufacturer or authorized distributors?
All STB60NF10-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB60NF10-1 meets industry standards.
7.What is the process for return or replacement of STB60NF10-1?
All STB60NF10-1 units undergo pre-shipment inspection (PSI). If there is an issue with STB60NF10-1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB60NF10-1 part is unused and in its original packaging.
Return procedure for STB60NF10-1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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