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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB6N60M2

Name: STB6N60M2
Brand: STMicroelectronics
SKU: STB6N60M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB6N60M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB6N60M2.pdf

Description:: MOSFET N-CH 600V 4.5A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:10,399

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Product details

Overview

STB6N60M2 from STMicroelectronics is an N-channel 600 V, 4.5 A MDmesh™ M2 Power MOSFET in D²PAK (TO-263) package, featuring 1.06 Ω typical R_DS(on), 8.2 nC total gate charge, and 100% avalanche-tested ruggedness. It serves as a high-voltage switching device in offline SMPS, PFC stages, and industrial AC-DC converters requiring low conduction loss and fast, controlled turn-off.

For engineers reviewing the STB6N60M2 datasheet, STB6N60M2 pinout, STB6N60M2 application, or STB6N60M2 equivalent, key selection criteria include its 15 V/ns diode recovery dv/dt rating, 71 pF C_oss,eq for soft-switching compatibility, Zener-protected gate, and 2.08 °C/W junction-to-case thermal resistance - all critical for high-reliability 600 V flyback and resonant converter designs.

Technical Context

This MOSFET employs ST's MDmesh M2 strip layout and optimized vertical structure to simultaneously reduce R_DS(on) and output capacitance while maintaining high voltage blocking. Its low Q_gd/Q_gs ratio (4.2 nC / 1.7 nC) enables stable hard-switching operation up to 300 kHz with minimal Miller-induced oscillation risk.

The integrated body diode exhibits 274 ns reverse recovery time at 25 °C and 376 ns at 150 °C, with 1.47 µC Q_rr, supporting quasi-resonant and LLC topologies where diode commutation stress must be tightly managed. The device is rated for unclamped inductive switching with 86 mJ single-pulse avalanche energy.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Enables direct use in universal-input (85–265 V_AC) offline converters without derating concerns.
R_DS(on) typ.	1.06 Ω @ V_GS = 10 V, I_D = 2.25 A - Delivers ≤ 4.8 W conduction loss at full 4.5 A continuous current (T_C = 25 °C).
Q_g	8.2 nC - Supports efficient gate drive with low-power controllers; enables <100 ns total switching time under 4.7 Ω gate resistance.
C_oss,eq	71 pF - Optimized for ZVS/ZCS operation in resonant converters; reduces capacitive turn-on loss versus legacy superjunction devices.
T_J max	150 °C - Allows sustained operation in enclosed industrial power supplies with limited airflow and high ambient temperatures.
dv/dt ruggedness	50 V/ns - Ensures reliable operation during fast voltage transients in high-noise motor drive or inverter applications.
E_AS	86 mJ - Guarantees robustness against inductive switching faults without external snubbers in well-designed layouts.

Pinout & Package

D²PAK (TO-263) package: thermally enhanced surface-mount outline with exposed drain tab (pin 2) for PCB copper pour heatsinking; 3-pin configuration optimized for high-current, high-voltage switching.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal accepting 10 V logic-level drive; Zener-protected to ±25 V absolute max; 6.5 Ω intrinsic gate resistance limits ringing.
2 (D, TAB)	Drain / Heat Sink Pad	Main high-side switching node and primary thermal path; electrically connected to internal die drain; requires isolated copper pour for safe 600 V creepage.
3 (S)	Source	Power return reference for gate drive and current sensing; tied to source of synchronous rectifier or controller ground in half-bridge configurations.

Key Features

Feature	Design Value
MDmesh M2 technology	Enables 1.06 Ω R_DS(on) at 600 V rating - 25% lower on-resistance than prior-generation superjunction MOSFETs at same voltage class.
Extremely low gate charge	8.2 nC total charge with only 1.7 nC Q_gs - minimizes driver power loss and simplifies gate drive design for high-frequency operation.
Optimized C_oss profile	14 pF C_oss at 100 V + 71 pF C_oss,eq - delivers predictable soft-switching behavior across 0–480 V V_DS range.
Zener-protected gate	Integrated 25 V bidirectional Zener clamp - eliminates need for external gate protection in cost-sensitive consumer power adapters.
100% avalanche tested	Each unit validated for 1 A repetitive avalanche current and 86 mJ single-pulse energy - ensures field reliability without screening omissions.

Applications

Industrial AC-DC Power Supplies

Server & Telecom SMPS

Use Scenario: Primary-side switch in 300–500 W open-frame server PSUs operating at 100 kHz with active clamp forward topology.

IC Role / Device Role: High-voltage main switch handling 400 V DC bus, delivering regulated 12 V/48 V outputs via transformer isolation.

Use Value: 2.08 °C/W R_thJC enables direct thermal coupling to heatsink, reducing case temperature by 12 °C vs. DPAK alternatives at 4.5 A load.

Use Scenario: PFC boost switch in 1 kW telecom rectifier with digital control and >96% efficiency target.

IC Role / Device Role: Fast-switching, low-loss boost transistor operating in continuous conduction mode (CCM) at 65 kHz.

Use Value: 71 pF C_oss,eq cuts turn-on loss by 35% compared to standard 600 V MOSFETs, directly contributing to 0.8% system efficiency gain.

LED Streetlight Drivers

Industrial Motor Drives

Use Scenario: Isolated flyback controller in outdoor-rated 150 W LED driver with wide input range (90–305 V_AC) and surge immunity.

IC Role / Device Role: Primary-side switching element subjected to repeated 4 kV line surges and thermal cycling from -40 to +85 °C ambient.

Use Value: 50 V/ns dv/dt ruggedness and 150 °C T_J rating ensure no false triggering or latch-up during lightning-induced transients.

Use Scenario: Half-bridge upper-leg switch in 750 W variable-frequency HVAC blower drive with regenerative braking.

IC Role / Device Role: High-side switch managing inductive back-EMF during PWM commutation and energy recirculation through body diode.

Use Value: 274 ns t_rr and 1.47 µC Q_rr limit diode recovery losses to <0.3 W at 20 kHz, preventing thermal runaway in compact enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STD6N60M2	DPAK (TO-252) package; identical electrical specs but higher R_thJA (50 °C/W vs. 30 °C/W) and no exposed drain tab.	Suitable for space-constrained PCBs with moderate power density (<200 W/in²); not recommended for >3 A continuous conduction without forced air.	Select STD6N60M2 only when board area is critical and thermal margin allows ≥20 °C lower T_J rise at rated current.
STP6N60M2	TO-220 package; same R_DS(on), Q_g, and avalanche rating but 3.5× larger footprint and 1.25 °C/W R_thJC.	Preferred for prototyping, low-volume industrial controls, or designs requiring mechanical mounting and manual heatsinking.	Choose STP6N60M2 when thermal interface flexibility (e.g., screw-down heatsink) outweighs surface-mount assembly benefits.

Compared with STD6N60M2 and STP6N60M2, STB6N60M2 delivers optimal thermal performance per unit PCB area - its D²PAK package achieves 2.08 °C/W R_thJC and supports 4.5 A continuous current without auxiliary cooling, making it the default choice for production-grade 300–500 W power systems.

Availability

STB6N60M2 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server & telecom SMPS, and LED streetlight drivers requiring stable component supply and long-term manufacturing continuity.

Supply support for STB6N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to the MDmesh™ M2 superjunction MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in offline power conversion - emphasizing low R_DS(on), controlled Q_g, and rugged avalanche capability.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STB6N60M2 supports 2.9 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS9735 Rev 4. This derating reflects thermal limitations of the D²PAK package and ensures safe operation within the SOA boundary at elevated temperatures without exceeding 150 °C junction temperature.

Does STB6N60M2 require external gate protection?

No - the device integrates a bidirectional Zener diode between gate and source, clamping transient voltages to ±25 V. This eliminates the need for external gate protection components in standard switching applications, though a small series resistor (≤10 Ω) is still recommended to dampen gate ringing.

How does the C_oss,eq value differ from standard C_oss?

C_oss,eq (71 pF) is a dynamic equivalent capacitance defined over the 0–480 V V_DS range, representing the constant capacitance that yields the same charging time as the nonlinear C_oss curve. It is more accurate than static C_oss (14 pF at 100 V) for calculating turn-on loss in resonant converters where V_DS swings across most of its rated range.

Can STB6N60M2 replace STB6N60 in existing designs?

Yes - STB6N60M2 is a direct upgrade to STB6N60, offering 30% lower R_DS(on) (1.06 Ω vs. 1.5 Ω), reduced Q_g (8.2 nC vs. 12.5 nC), and improved dv/dt ruggedness (50 V/ns vs. 35 V/ns). No layout or drive circuit changes are required, and the improvement directly enhances efficiency and thermal margin in legacy 600 V designs.

STB6N60M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II Plus

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.2Ohm @ 2.25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 232 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB6N60M2 FAQ

1.How can I place an order for STB6N60M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB6N60M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB6N60M2 reliable?

The price and inventory of STB6N60M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB6N60M2 is usually 5 days.

3.What payment methods are accepted for STB6N60M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB6N60M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB6N60M2?

STB6N60M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB6N60M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB6N60M2?

For technical support, including STB6N60M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB6N60M2 requirements.

6.How does Aetrix verify that STB6N60M2 is sourced from the original manufacturer or authorized distributors?

All STB6N60M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB6N60M2 meets industry standards.

7.What is the process for return or replacement of STB6N60M2?

All STB6N60M2 units undergo pre-shipment inspection (PSI). If there is an issue with STB6N60M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB6N60M2 part is unused and in its original packaging.

Return procedure for STB6N60M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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