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STMicroelectronics STB6NK60ZT4
- Part No.:
- STB6NK60ZT4
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB6NK60ZT4.pdf
- Description:
- MOSFET N-CH 600V 6A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:914
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Product details
Overview
STB6NK60ZT4 from STMicroelectronics is a Zener-protected N-channel 600 V, 1.2 Ω (max) SuperMESH Power MOSFET in D²PAK (TO-263) package, rated for 6 A continuous drain current at TC = 25 °C and optimized for high-voltage switching in offline SMPS, PFC stages, and AC-DC adapters. It delivers 4.5 V/ns peak diode recovery dv/dt capability and 210 mJ single-pulse avalanche energy.
For engineers reviewing the STB6NK60ZT4 datasheet, STB6NK60ZT4 pinout, STB6NK60ZT4 application, or STB6NK60ZT4 equivalent, key selection criteria include its 1.2 Ω RDS(on) at VGS = 10 V, 33–46 nC total gate charge, 100% avalanche-tested ruggedness, and Zener-protected gate structure - critical for reliable operation in hard-switched flyback and resonant converters.
Technical Context
This device implements ST's SuperMESH process - an evolution of PowerMESH - to simultaneously reduce on-resistance and enhance dv/dt immunity without compromising safe operating area. Its Zener-protected gate structure clamps transient overvoltage during fast switching transitions, eliminating external gate protection components in many designs.
The MOSFET features a source-drain diode with 445 ns reverse recovery time and 2.7 µC Qrr at ISD = 6 A, enabling efficient operation in discontinuous conduction mode (DCM) flyback topologies. Thermal resistance RthJC is 1.14 °C/W (D²PAK), supporting high-power density layouts when mounted on copper-clad PCBs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - Withstands full mains rectified voltage (e.g., 375 V DC + margin) in universal-input offline converters. |
| RDS(on) max | 1.2 Ω @ VGS = 10 V, ID = 3 A - Enables low conduction loss in 6 A-class power stages up to ~100 W output. |
| Qg | 33–46 nC - Low gate charge reduces driver loss and enables use with standard gate drivers (e.g., UC384x, VIPer). |
| EAS | 210 mJ - Confirmed single-pulse avalanche energy supports robustness against inductive switching transients. |
| dv/dt rating | 4.5 V/ns - High immunity prevents spurious turn-on during fast voltage transients in high-frequency SMPS. |
| VGS(th) | 3.0–4.5 V - Threshold compatible with 5 V and 12 V logic-level gate drive without level-shifting. |
| TJ range | –55 to 150 °C - Supports industrial and extended-temperature operation in enclosed power supplies. |
Pinout & Package
D²PAK (TO-263) package: surface-mount, thermally enhanced outline with exposed drain tab (pin 2) for direct PCB heat sinking. Standard JEDEC MO-211AB footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Drain, Tab) | Main high-side power path terminal | Exposed metal tab electrically connected to drain; must be soldered to large copper pour for thermal and electrical performance. |
| G (Gate, Pin 1) | Control input | Low-impedance gate node requiring <100 pF layout capacitance; Zener-protected to ±30 V absolute max. |
| S (Source, Pin 3) | Power return reference | Common source node for gate drive return and current sensing; connects to primary ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| Zener-protected gate | Integrated 30 V bidirectional Zener eliminates need for external gate clamp diodes in most applications. |
| 100% avalanche tested | Every unit undergoes unclamped inductive switching test per JEDEC JESD22-A109, ensuring guaranteed ruggedness. |
| SuperMESH technology | Optimized cell layout achieves 1.2 Ω RDS(on) while maintaining >4.5 V/ns dv/dt immunity - not achievable with legacy PowerMESH. |
| Low Coss eq. | 56 pF equivalent output capacitance reduces switching loss and improves zero-voltage switching (ZVS) margin in resonant topologies. |
| High ESD rating | 3.5 kV HBM - Robust handling during SMT assembly and board-level testing without special ESD precautions. |
Applications
| AC-DC Adapter Primary Switch | Industrial Flyback SMPS |
|---|---|
Use Scenario: 36–75 W universal-input (85–265 VAC) adapter for consumer electronics. IC Role / Device Role / Timing Role: Main switch in DCM flyback converter operating at 65–100 kHz. Use Value: 1.2 Ω RDS(on) and 210 mJ EAS enable compact heatsink-free design with >85% efficiency at full load. |
Use Scenario: 48 V/2 A isolated supply in PLC I/O modules with wide ambient temperature range. IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback with valley-switching control. Use Value: 4.5 V/ns dv/dt rating prevents false triggering under EMI stress; D²PAK thermal resistance (1.14 °C/W) sustains 150 °C junction temp. |
| PFC Boost Stage | LED Driver Secondary Switch |
Use Scenario: 150 W active PFC front-end in commercial LED streetlight driver. IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC controller (e.g., L6562A). Use Value: Low Qg (33–46 nC) minimizes gate drive loss at 65 kHz; Zener protection handles gate ringing from boost inductor leakage. |
Use Scenario: Secondary-side synchronous rectifier in 12 V/5 A constant-current LED driver with isolated feedback. IC Role / Device Role / Timing Role: Low-side synchronous rectifier controlled by transformer-coupled timing signal. Use Value: 1.6 V VSD forward drop at 6 A reduces conduction loss vs. Schottky diode; integrated body diode enables self-driven operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP6NK60Z | Same die, TO-220 package; RthJC = 4.2 °C/W vs. 1.14 °C/W (D²PAK); no insulated tab. | Requires mechanical isolation from heatsink; less suitable for high-density SMT layouts. | Select when through-hole assembly or discrete heatsink mounting is preferred. |
| FQP6N60 | 600 V, 1.5 Ω RDS(on), 6 A, TO-220; no Zener gate protection; EAS not specified. | Lacks integrated gate protection and avalanche rating - requires external clamping and derating in harsh environments. | Select only for cost-sensitive, non-critical applications with controlled gate drive and low dv/dt stress. |
Compared with STP6NK60Z and FQP6N60, STB6NK60ZT4 offers superior thermal performance (1.14 °C/W), guaranteed avalanche ruggedness, and integrated gate protection - making it the preferred choice for space-constrained, high-reliability offline power stages where layout simplicity and long-term field reliability are prioritized.
Availability
STB6NK60ZT4 is available at Aetrix Electronics and suitable for AC-DC adapters, industrial flyback SMPS, and PFC boost stages requiring stable component supply across production lifecycles.
Supply support for STB6NK60ZT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.
This device belongs to ST's SuperMESH Power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching power supplies where ruggedness, low RDS(on), and ease of use are critical.
FAQ
What is the maximum continuous drain current for STB6NK60ZT4 at 100 °C case temperature?
The maximum continuous drain current is 3.8 A at TC = 100 °C, as specified in Table 1 of DS2754 Rev 9. This rating reflects thermal derating due to junction-to-case thermal resistance (1.14 °C/W) and maximum allowable junction temperature (150 °C). Operation above this current requires forced cooling or reduced ambient temperature.
Does STB6NK60ZT4 require external gate protection components?
No - STB6NK60ZT4 integrates a bidirectional Zener diode between gate and source, rated for ±30 V, which clamps transient overvoltage during switching. This eliminates the need for external gate protection diodes in typical flyback and PFC applications, simplifying layout and reducing BOM count.
Can STB6NK60ZT4 be used in zero-voltage switching (ZVS) topologies?
Yes - its low 56 pF equivalent output capacitance (Coss eq.) and 445 ns reverse recovery time support efficient ZVS operation in resonant LLC and half-bridge converters. The device's 4.5 V/ns dv/dt rating also ensures stable gate control during high-slew-rate resonant transitions.
How does the D²PAK package of STB6NK60ZT4 compare thermally to TO-220 versions like STP6NK60Z?
STB6NK60ZT4 in D²PAK has RthJC = 1.14 °C/W, versus 4.2 °C/W for STP6NK60Z in TO-220. This 3.7× lower thermal resistance allows significantly higher power dissipation on standard 2 oz. copper PCBs without a heatsink - critical for compact, fanless power supplies targeting UL/EN 62368-1 compliance.
STB6NK60ZT4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- SuperMESH™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.2Ohm @ 3A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 46 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 905 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 110W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
STB6NK60ZT4 FAQ
1.How can I place an order for STB6NK60ZT4 through Aetrix?
Please submit a Request for Quotation (RFQ) for STB6NK60ZT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB6NK60ZT4 reliable?
The price and inventory of STB6NK60ZT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB6NK60ZT4 is usually 5 days.
3.What payment methods are accepted for STB6NK60ZT4?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB6NK60ZT4 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB6NK60ZT4?
STB6NK60ZT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB6NK60ZT4 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB6NK60ZT4?
For technical support, including STB6NK60ZT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB6NK60ZT4 requirements.
6.How does Aetrix verify that STB6NK60ZT4 is sourced from the original manufacturer or authorized distributors?
All STB6NK60ZT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB6NK60ZT4 meets industry standards.
7.What is the process for return or replacement of STB6NK60ZT4?
All STB6NK60ZT4 units undergo pre-shipment inspection (PSI). If there is an issue with STB6NK60ZT4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB6NK60ZT4 part is unused and in its original packaging.
Return procedure for STB6NK60ZT4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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