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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB6NM60N

Name: STB6NM60N
Brand: STMicroelectronics
SKU: STB6NM60N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB6NM60N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB6NM60N.pdf

Description:: MOSFET N-CH 600V 4.6A D2PAK

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Product details

Overview

STB6NM60N from STMicroelectronics is an N-channel 600 V, 0.85 Ω (typ), 4.6 A MDmesh™ II Power MOSFET in D²PAK package, designed for high-efficiency switching converters operating up to 150 °C junction temperature, with 100% avalanche tested ruggedness and low gate charge (13 nC) enabling fast hard-switching in SMPS and PFC stages.

For engineers reviewing the STB6NM60N datasheet, STB6NM60N pinout, STB6NM60N application, or STB6NM60N equivalent, key selection criteria include its 600 V V_DSS, 0.85 Ω R_DS(on) at V_GS = 10 V, 13 nC total gate charge, 40 V/ns dv/dt capability, and D²PAK thermal resistance of 2.78 °C/W - all critical for high-voltage flyback, LLC resonant, and industrial AC-DC power supply design.

Technical Context

This device implements ST's second-generation MDmesh™ vertical structure combined with strip layout, achieving ultra-low R_DS(on) × Q_g figure-of-merit (0.85 Ω × 13 nC = 11.05 Ω·nC). Its 650 V rated breakdown voltage (V_(BR)DSS ≥ 600 V) supports 400 V AC input derating with margin, while 15 V/ns peak diode recovery dv/dt ensures robustness in inductive turn-off.

The source-drain diode exhibits 1.3 V forward voltage at 4.6 A and 300 ns reverse recovery time (T_j = 25 °C), enabling quasi-resonant operation without external snubbers. Gate threshold voltage (2–4 V) and ±25 V V_GS rating support standard 12–15 V gate drivers with safe overdrive margin.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands 400 V AC rectified input (≈565 V peak) with 6% margin; suitable for universal-input offline SMPS.
R_DS(on)	0.85 Ω (typ) at V_GS = 10 V - Enables <1.5 W conduction loss at 4.6 A, reducing heatsink requirements in 65–150 W designs.
Q_g	13 nC - Low drive power demand allows use of low-cost gate drivers (e.g., UC384x family) without buffering.
I_D (cont)	4.6 A at T_C = 25 °C - Sustains full load in compact D²PAK packages when mounted on ≥25 cm² copper area.
R_thj-case	2.78 °C/W - Enables 15 W dissipation with ≤42 °C case-to-ambient rise, supporting natural-convection cooling in enclosed adapters.
E_AS	65 mJ - Withstands single-pulse unclamped inductive energy events (e.g., transformer leakage spikes) without failure.
dv/dt (off)	40 V/ns - Resists false turn-on during fast voltage transients in bridge-leg configurations.

Pinout & Package

D²PAK (TO-263) package: surface-mount, isolated drain tab, 3-pin configuration with exposed metal pad for thermal and electrical connection to PCB ground plane.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Low-impedance input (R_g = 6 Ω); requires <100 ns rise/fall for optimal switching; sensitive to ESD (±25 V max).
2 (Drain)	High-voltage power terminal	Internally connected to exposed metal tab; must be soldered to large copper pour for thermal and safety isolation.
3 (Source)	Power return and reference node	Common return for gate driver and load; low-inductance layout essential to minimize V_GS ringing during switching.

Key Features

Feature	Design Value
MDmesh™ II technology	Combines optimized vertical drift region and planar strip layout to achieve industry-leading R_DS(on) × Q_g trade-off for 600 V class.
100% avalanche rated	Guaranteed single-pulse avalanche energy of 65 mJ enables reliable operation under transient overloads without derating.
Low C_iss/C_oss	420 pF input capacitance and 30 pF output capacitance reduce switching losses and improve light-load efficiency in QR flyback.
Fast diode recovery	300 ns t_rr and 2 µC Q_rr minimize commutation losses and EMI in synchronous rectification and half-bridge topologies.
ECOPACK® compliant	Lead-free, RoHS-compliant D²PAK package with halogen-free molding compound meeting industrial environmental standards.

Applications

Industrial AC-DC Adapters

Server PSU Primary Switch

Use Scenario: 100–240 V AC input, 65–120 W output, active PFC + LLC resonant converter.

IC Role / Device Role / Timing Role: Main switch in PFC boost stage and LLC half-bridge primary side; operates at 65–300 kHz with ZVS.

Use Value: 0.85 Ω R_DS(on) and 13 nC Q_g reduce conduction + switching losses by >18% vs. legacy 600 V MOSFETs, enabling 92%+ efficiency at full load.

Use Scenario: High-density 80 PLUS Titanium server power supply with digital control and multi-phase PFC.

IC Role / Device Role / Timing Role: Primary-side switch in interleaved PFC and asymmetric half-bridge DC-DC stages; handles 4.6 A RMS current.

Use Value: 2.78 °C/W R_thj-case and 150 °C T_jmax allow operation at 85 °C ambient without forced air, supporting fanless 1U chassis designs.

LED Driver Power Stage

Industrial Motor Drive Inverter

Use Scenario: Constant-current LED driver for street lighting (230 V AC input, 100–200 W output, DALI dimming).

IC Role / Device Role / Timing Role: High-side switch in buck-boost or SEPIC topology; switches at 50–100 kHz with PWM dimming.

Use Value: 600 V V_DSS and 1.3 V V_SD diode drop enable direct rectified-line operation with minimal bulk capacitor size and reduced BOM cost.

Use Scenario: 3-phase inverter for HVAC compressors and pump drives (230/400 V AC input, 0.5–2 kW output).

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 6–12 kHz hard-switched inverter legs; used with bootstrap gate drive.

Use Value: 40 V/ns dv/dt immunity and 18.4 A pulsed ID prevent shoot-through during high-di/dt motor phase transitions, improving system reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NM60N	Same die, TO-220 package; R_thj-case = 2.78 °C/W (identical), but through-hole mounting and no isolated tab.	Preferred for prototyping, lower-volume industrial controls where manual assembly and heatsink clamping are acceptable.	Select when mechanical robustness and serviceability outweigh PCB space constraints and automated assembly needs.
FDPF18N50FT	500 V rating, 0.32 Ω R_DS(on), 34 nC Q_g; higher conduction loss at 400 V bus but lower gate drive demand at 25 V.	Suitable only for 230 V AC-only systems (<350 V DC bus); not rated for universal-input or PFC front-end use.	Choose only for cost-sensitive 230 V fixed-input applications where 600 V margin is unnecessary and gate drive headroom is limited.

Compared with STP6NM60N, STB6NM60N offers superior thermal integration via D²PAK's exposed drain pad and automated assembly compatibility, while FDPF18N50FT trades off voltage rating and switching speed for lower R_DS(on) in restricted-input applications.

Availability

STB6NM60N is available at Aetrix Electronics and suitable for industrial AC-DC adapters, server PSU primary switches, LED driver power stages, and industrial motor drive inverters requiring stable component supply and long-term lifecycle support.

Supply support for STB6NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching power supplies targeting 80 PLUS Platinum/Titanium compliance and compact form factors.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STB6NM60N supports 2.9 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the D²PAK package and must be applied when ambient temperature or PCB copper area restricts heat dissipation - design verification requires junction temperature calculation using R_thj-case = 2.78 °C/W and actual power dissipation.

Does STB6NM60N require a negative gate turn-off voltage?

No. The device has a gate threshold voltage range of 2–4 V and is fully enhanced at V_GS = 10 V; it does not require negative gate bias for reliable turn-off. However, applying –5 V during off-state improves noise immunity in high-dv/dt environments - this is optional and supported within the ±25 V V_GS absolute maximum rating.

Can STB6NM60N replace STP6NM60N in an existing TO-220 footprint?

No - STB6NM60N uses D²PAK (TO-263), which has different pad layout, thermal pad requirements, and mechanical dimensions than TO-220. Direct replacement would require PCB redesign, including new land pattern, stencil aperture, and thermal via placement. Mechanical drawings confirm incompatible lead pitch and body outline between the two packages.

Is the source-drain diode suitable for synchronous rectification?

No - the intrinsic body diode has 300 ns reverse recovery time and 2 µC Q_rr, making it unsuitable for high-frequency synchronous rectification where fast recovery or zero-recovery diodes are required. It is optimized for freewheeling in hard-switched topologies, not for active rectification; external Schottky or GaN FETs are recommended for SR applications above 100 kHz.

STB6NM60N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 4.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 920mOhm @ 2.3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 420 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB6NM60N FAQ

1.How can I place an order for STB6NM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STB6NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB6NM60N reliable?

The price and inventory of STB6NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB6NM60N is usually 5 days.

3.What payment methods are accepted for STB6NM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB6NM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB6NM60N?

STB6NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB6NM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB6NM60N?

For technical support, including STB6NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB6NM60N requirements.

6.How does Aetrix verify that STB6NM60N is sourced from the original manufacturer or authorized distributors?

All STB6NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB6NM60N meets industry standards.

7.What is the process for return or replacement of STB6NM60N?

All STB6NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STB6NM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB6NM60N part is unused and in its original packaging.

Return procedure for STB6NM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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