STMicroelectronics STB75N20

Overview

STB75N20 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in D²PAK package, rated for 200V drain-source voltage, 75A continuous drain current at 25°C, and 0.028Ω typical R_DS(on) at V_GS = 10V. It features low gate charge (84 nC), exceptional dv/dt capability, and 100% avalanche tested - designed as primary switch in high-efficiency isolated DC-DC converters.

For engineers reviewing the STB75N20 datasheet, STB75N20 pinout, STB75N20 application, or STB75N20 equivalent, key selection criteria include its 200V breakdown rating, 0.028Ω on-resistance, 84 nC total gate charge, 190W power dissipation at T_C = 25°C, and D²PAK thermal performance with R_thJC = 0.66°C/W.

Technical Context

This STripFET™ II device uses a planar vertical structure optimized to minimize input capacitance (C_iss = 3260 pF) and gate charge, enabling fast switching (t_d(on) = 53 ns, t_f = 29 ns) with low drive loss. Its rugged unclamped inductive switching capability supports reliable operation under hard-switching conditions.

The integrated source-drain diode exhibits 1.6V forward voltage at 75A and 222 ns reverse recovery time at 25°C, with controlled Q_rr = 2.18 µC - critical for synchronous rectification and ZVS/ZCS topologies where diode recovery behavior directly impacts efficiency and EMI.

Key Specifications

Pinout & Package

STB75N20 is housed in a surface-mount D²PAK (TO-263) package with three terminals: Gate (G), Drain (D), and Source (S). The package features a large exposed drain pad for enhanced thermal conduction to PCB copper, supporting high-power density layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 200V power MOSFET applications.

Compared with IRFP4668PbF and IXTH75N20L, STB75N20 offers the best balance of low Q_g/R_DS(on) trade-off in surface-mount form, enabling higher-density, lower-cost board designs without sacrificing ruggedness or thermal performance.

Availability

STB75N20 is available at Aetrix Electronics and suitable for telecom AC-DC rectification, server PSU primary switching, and industrial motor drive inverters requiring stable component supply across multi-year production cycles.

Supply support for STB75N20 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

STB75N20 belongs to the STripFET™ II Power MOSFET product line, engineered specifically for high-frequency, high-efficiency switched-mode power supplies where low gate charge and rugged avalanche capability are essential.

FAQ

What is the maximum safe operating temperature for STB75N20?

The STB75N20 has a maximum operating junction temperature (T_J) of 150°C and a storage temperature range of –50°C to +150°C. Derating begins at T_C = 25°C, with continuous drain current reduced to 47A at T_C = 100°C per absolute maximum ratings table. Thermal design must maintain T_J ≤ 150°C under worst-case load and ambient conditions.

Does STB75N20 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control switching speed and suppress ringing. For typical 100–300 kHz operation with a 1-A peak gate driver, a 4.7Ω resistor is recommended (per Figure 15 test circuit). Lower values increase dv/dt stress; higher values raise switching losses. Layout parasitics must be minimized regardless of R_G value.

Can STB75N20 be used in synchronous rectification configurations?

No - STB75N20 is not optimized for synchronous rectification. Its body diode has 1.6V forward voltage and 222 ns reverse recovery time at 25°C, which causes significant loss and EMI in secondary-side roles. Dedicated synchronous rectifier MOSFETs (e.g., STP16NF06L) offer lower V_SD and faster trr for that function.

Is STB75N20 pin-compatible with STP75N20 or STW75N20?

No - STB75N20 (D²PAK), STP75N20 (TO-220), and STW75N20 (TO-247) share identical electrical specifications but differ in mechanical footprint, thermal resistance, and mounting method. Pinouts are functionally identical (G-D-S), but physical layout, soldering, and heatsinking approaches are not interchangeable without board redesign.