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STMicroelectronics STB75NF75LT4

Part No.:
STB75NF75LT4
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixSTB75NF75LT4.pdf
Description:
MOSFET N-CH 75V 75A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:927

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Product details

Overview

STB75NF75LT4 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in D²PAK (TO-263) package, rated for 75V VDS, 75A continuous drain current at TC = 25°C, and RDS(on) ≤ 0.011Ω at VGS = 10V. It features 100% avalanche tested ruggedness, exceptional dv/dt capability, and low gate charge (Qg = 75 nC), making it suitable as a primary switch in high-frequency telecom DC-DC converters.

For engineers reviewing the STB75NF75LT4 datasheet, STB75NF75LT4 pinout, STB75NF75LT4 application, or STB75NF75LT4 equivalent, key selection criteria include its 0.009Ω typical RDS(on), 300A pulsed drain current capability, 680 mJ single-pulse avalanche energy, and D²PAK thermal performance with RthJC = 0.5°C/W - critical for high-efficiency power stage design.

Technical Context

This STripFET™ II device uses a planar vertical structure optimized to minimize input capacitance (Ciss = 4300 pF) and gate charge, enabling fast switching (tr = 155 ns, tf = 60 ns) with low drive loss. Its source-drain diode supports synchronous rectification with trr = 120 ns and Qrr = 500 nC at 150°C junction temperature.

The MOSFET operates across –55°C to +175°C junction range and is fully characterized for unclamped inductive switching. Its safe operating area (SOA) is defined up to 300A pulsed current with derating above 25°C case temperature, and it meets JEDEC JESD97 for lead-free ECOPACK® compliance.

Key Specifications

ParameterValue and Actual Design Meaning
VDS75 V - Maximum blocking voltage in hard-switched topologies without derating
RDS(on) (typ)0.009 Ω at VGS = 10 V - Enables <1 W conduction loss at 37.5 A DC
ID (cont)75 A at TC = 25°C - Supports high-current primary-side switching in 1–3 kW telecom PSUs
Qg75 nC - Reduces gate driver power demand and enables >500 kHz operation with standard drivers
EAS680 mJ - Withstands single unclamped inductive energy spikes in flyback/LLC designs
RthJC0.5 °C/W - Allows direct heatsink mounting for efficient thermal management in compact layouts
dv/dt rating10 V/ns - Ensures robustness against parasitic turn-on in high-dV/dt environments

Pinout & Package

Package: D²PAK (TO-263), surface-mount, single-ended heatsink-compatible outline with exposed drain pad for thermal and electrical connection.

Pin/TerminalCircuit RoleDesign Meaning
Drain (tab)Main power output terminalExposed copper pad - electrically connected to drain; must be soldered to PCB copper pour for thermal and current conduction
SourcePower return pathLow-inductance source connection; forms common reference for gate drive and current sensing
GateControl inputHigh-impedance MOS control node requiring <75 nC charge for full enhancement; sensitive to ESD

Key Features

FeatureDesign Value
STripFET™ II processReduces gate charge by ~30% vs. first-gen STripFET, lowering driver losses and EMI in high-frequency SMPS
100% avalanche testedGuarantees ruggedness under transient overvoltage conditions without external snubbers in flyback/forward converters
Low threshold voltageVGS(th) = 1–2.5 V - Enables direct drive from 3.3 V or 5 V logic controllers without level-shifting
ECOPACK® compliantLead-free second-level interconnect per JEDEC JESD97 - qualified for RoHS-compliant industrial and telecom manufacturing
High dv/dt immunity10 V/ns rating - prevents false turn-on during fast voltage transitions in half-bridge configurations

Applications

Telecom DC-DC ConvertersServer VRMs

Use Scenario: Primary-side switch in 48 V input, 12 V/50 A isolated forward converter for telecom shelf power supplies.

IC Role / Device Role / Timing Role: High-side main switch operating at 200–500 kHz with synchronous rectification on secondary side.

Use Value: 0.009 Ω RDS(on) reduces conduction loss by >40% vs. comparable 12 mΩ devices, improving full-load efficiency to >94%.

Use Scenario: High-current phase-leg switch in multiphase buck converter for CPU core voltage regulation (1.0–1.2 V @ 100+ A).

IC Role / Device Role / Timing Role: Low-side switch handling high di/dt currents with fast turn-off (tf = 60 ns) to minimize shoot-through risk.

Use Value: 300 A pulsed current rating supports peak load transients without SOA violation, ensuring stable operation during CPU burst loads.

Industrial Motor DrivesUPS Inverters

Use Scenario: Half-bridge leg in 24–48 V BLDC motor controller for HVAC blowers and pumps.

IC Role / Device Role / Timing Role: Fast-switching N-channel switch paired with bootstrap gate driver for 10–20 kHz PWM commutation.

Use Value: 120 ns reverse recovery time (trr) of integrated body diode minimizes switching loss during freewheeling, reducing heatsink size by 30%.

Use Scenario: Output H-bridge switch in online double-conversion UPS delivering 230 V AC from 380 V DC bus.

IC Role / Device Role / Timing Role: Hard-switched inverter switch handling 50/60 Hz fundamental plus harmonic content up to 3 kHz.

Use Value: 680 mJ avalanche energy rating allows safe operation during grid fault events without external clamping circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRFB7545PBFRDS(on) = 0.0085 Ω (typ), Qg = 82 nC, TO-220AB packageLacks D²PAK thermal interface; higher RthJA limits power density in SMT layoutsSelect when through-hole assembly or lower RDS(on) is prioritized over board space and thermal performance
IXTH75N10L2RDS(on) = 0.0105 Ω (typ), Qg = 65 nC, TO-247 packageHigher RthJC (0.65°C/W) and larger footprint reduce thermal efficiency in dense PCBsPrefer for legacy TO-247 socket compatibility where D²PAK rework is constrained

Compared with IRFB7545PBF and IXTH75N10L2, STB75NF75LT4 delivers superior thermal resistance (0.5°C/W), surface-mount scalability, and tighter gate charge distribution - making it optimal for high-power-density telecom and server power stages where layout area and thermal headroom are critical.

Availability

STB75NF75LT4 is available at Aetrix Electronics and suitable for telecom power supplies, server VRMs, and industrial motor drives requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for STB75NF75LT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STB75NF75LT4 belongs to ST's STripFET™ II Power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion in telecom and computing infrastructure where low RDS(on), low Qg, and avalanche ruggedness are mandatory.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The STB75NF75LT4 supports 70 A continuous drain current at TC = 100°C, as specified in Table 2 of the datasheet. This derated value reflects thermal limitations of the D²PAK package and must be used in thermal design calculations for sustained operation above ambient temperatures.

Does this MOSFET require a gate resistor for stability in hard-switched applications?

Yes - a gate resistor (typically 4.7 Ω, as used in the datasheet's switching test circuit) is recommended to dampen ringing, control dV/dt, and prevent oscillation during turn-on/turn-off. The device's low input capacitance (4300 pF) makes it susceptible to gate drive loop resonance without proper damping.

Can the integrated body diode be used for synchronous rectification?

No - the body diode is not optimized for synchronous rectification due to relatively high VSD (1.3 V at 75 A) and moderate trr (120 ns). For synchronous designs, an external Schottky or MOSFET-based synchronous rectifier is required to achieve high efficiency.

Is the STB75NF75LT4 suitable for automotive applications?

No - this part is not qualified to AEC-Q101 and lacks automotive-grade screening, temperature range extension beyond 175°C, or guaranteed PPAP documentation. ST offers dedicated automotive variants (e.g., STL75N75HF6) for such use cases.

STB75NF75LT4 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
STripFET™ II
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
75 V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
11mOhm @ 37.5A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
90 nC @ 5 V
Vgs (Max):
±15V
Input Capacitance (Ciss) (Max) @ Vds:
4300 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
300W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

STB75NF75LT4 FAQ

1.How can I place an order for STB75NF75LT4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB75NF75LT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB75NF75LT4 reliable?

The price and inventory of STB75NF75LT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB75NF75LT4 is usually 5 days.

3.What payment methods are accepted for STB75NF75LT4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB75NF75LT4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB75NF75LT4?

STB75NF75LT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB75NF75LT4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB75NF75LT4?

For technical support, including STB75NF75LT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB75NF75LT4 requirements.

6.How does Aetrix verify that STB75NF75LT4 is sourced from the original manufacturer or authorized distributors?

All STB75NF75LT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB75NF75LT4 meets industry standards.

7.What is the process for return or replacement of STB75NF75LT4?

All STB75NF75LT4 units undergo pre-shipment inspection (PSI). If there is an issue with STB75NF75LT4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB75NF75LT4 part is unused and in its original packaging.

Return procedure for STB75NF75LT4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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