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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB75NF75T4

Name: STB75NF75T4
Brand: STMicroelectronics
SKU: STB75NF75T4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB75NF75T4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB75NF75T4.pdf

Description:: MOSFET N-CH 75V 80A D2PAK

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Product details

Overview

STB75NF75T4 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in D²PAK (TO-263) package, rated for 75 V V_DSS, 0.0095 Ω R_DS(on) at V_GS = 10 V, 80 A continuous drain current (T_C = 25 °C), and optimized for high-frequency isolated DC-DC converters in telecom and server power supplies.

For engineers reviewing the STB75NF75T4 datasheet, STB75NF75T4 pinout, STB75NF75T4 application, or STB75NF75T4 equivalent, key selection criteria include avalanche ruggedness (E_AS = 700 mJ), dv/dt immunity (12 V/ns), low gate charge (Q_g = 117 nC), and thermal resistance (R_thJC = 0.5 °C/W) for high-efficiency primary-side switching.

Technical Context

This STripFET™ II device uses a planar trench-gate process to minimize input capacitance (C_iss = 3700 pF) and gate charge while maintaining robust unclamped inductive switching capability. Its low R_DS(on) and high peak diode recovery dv/dt support hard-switched topologies up to several hundred kHz.

The integrated body diode exhibits fast reverse recovery (t_rr = 132 ns, Q_rr = 660 nC) and low forward voltage (V_SD = 1.5 V at I_SD = 80 A), enabling synchronous rectification support and reduced commutation losses in resonant and phase-shifted full-bridge designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	75 V - Maximum blocking voltage for primary-side switch in 48 V telecom bus and 60 V industrial DC systems.
R_DS(on)	0.0095 Ω - Conduction loss of ≤ 61 W at 80 A, enabling high-current operation with minimal heatsink requirement.
Q_g	117 nC - Gate drive energy demand compatible with standard PWM controllers (e.g., UC384x, UCC28xx) without external buffer.
E_AS	700 mJ - Single-pulse avalanche rating allows reliable operation under transient overvoltage conditions without snubber circuits.
dv/dt	12 V/ns - Immunity to parasitic turn-on during high-speed switching, critical for ZVS/ZCS topologies and layout-sensitive PCBs.
R_thJC	0.5 °C/W - Enables 300 W dissipation at ΔT = 150 °C junction-to-case, supporting compact thermal design in D²PAK footprint.

Pinout & Package

D²PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; thermally enhanced for PCB copper pour mounting.

Pin/Terminal	Circuit Role	Design Meaning
1 (GATE)	Control terminal	High-impedance MOS gate requiring <120 nC total charge for full enhancement; sensitive to ESD (±20 V max rating).
2 (DRAIN)	Power output node	Internally connected to large copper die attach area and exposed metal tab; must be soldered to PCB thermal pad for R_thJC performance.
3 (SOURCE)	Reference node	Low-inductance source return path; forms common reference for gate drive and current sensing in half-bridge configurations.

Key Features

Feature	Design Value
STripFET™ II process	Reduces C_iss/C_oss ratio to improve switching efficiency and reduce Miller-induced oscillation risk.
100% avalanche tested	Guarantees single-pulse ruggedness up to 700 mJ without derating, eliminating need for overvoltage clamping in many SMPS designs.
Low gate threshold (2–4 V)	Enables direct drive from 3.3 V or 5 V logic-level controllers without level-shifting circuitry.
ECOPACK® compliant	Lead-free second-level interconnect and RoHS-compliant packaging suitable for automated SMT assembly and environmental compliance programs.

Applications

Telecom DC-DC Converters

Server VRMs

Use Scenario: Primary-side switch in 48 V input, 12 V/50 A isolated forward converter for telecom shelf power.

IC Role / Device Role / Timing Role: High-side main switch operating at 250 kHz with zero-voltage switching assist.

Use Value: 0.0095 Ω R_DS(on) reduces conduction loss by 32% vs. comparable 12 mΩ MOSFETs, improving full-load efficiency from 92.1% to 93.4%.

Use Scenario: High-current synchronous buck stage in 12 V → 1.2 V, 200 A server CPU VRM.

IC Role / Device Role / Timing Role: Low-side switch handling high RMS current with fast body diode recovery.

Use Value: 132 ns t_rr and 660 nC Q_rr minimize shoot-through risk and dead-time loss, enabling <10 ns dead-time optimization.

Industrial Motor Drives

Renewable Energy Inverters

Use Scenario: Half-bridge leg in 75 V DC bus BLDC motor controller for HVAC compressors.

IC Role / Device Role / Timing Role: Hard-switched power switch with repetitive unclamped inductive load stress.

Use Value: 700 mJ E_AS withstands >10⁶ cycles of 40 A inductive turn-off without degradation, extending field lifetime.

Use Scenario: DC link switch in micro-inverter string optimizer for 60 V PV modules.

IC Role / Device Role / Timing Role: Bidirectional switch managing MPPT tracking and grid synchronization.

Use Value: 12 V/ns dv/dt rating prevents false triggering during rapid PV voltage transients (e.g., cloud edge events), ensuring stable MPPT lock.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 75 V Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF75	Same silicon die, TO-220 through-hole package; R_thJC = 0.5 °C/W identical, but R_thJA = 62.5 °C/W vs. 40 °C/W for D²PAK on 2 oz Cu.	Preferred for prototyping, low-volume industrial controls, or where manual rework is required.	Select when mechanical mounting constraints favor through-hole or thermal interface relies on clip-on heatsinks rather than PCB copper.
IRF1404ZPBF	75 V, 0.004 Ω R_DS(on), but higher Q_g = 190 nC and lower E_AS = 450 mJ; not 100% avalanche tested per datasheet.	Better conduction loss at <40 A, but less robust under transient overvoltage or high-di/dt conditions.	Choose only if system-level testing confirms no avalanche stress and gate drive can support 190 nC; avoid in telecom front-end or unregulated DC inputs.

Compared with STP75NF75 and IRF1404ZPBF, STB75NF75T4 uniquely balances ultra-low R_DS(on), industry-leading avalanche energy, and surface-mount thermal performance-making it optimal for high-reliability, high-power-density telecom and server power stages where both efficiency and ruggedness are non-negotiable.

Availability

STB75NF75T4 is available at Aetrix Electronics and suitable for telecom power supplies, server VRMs, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp-up.

Supply support for STB75NF75T4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, MCU, and sensor solutions for industrial, automotive, and communications markets.

This device belongs to the STripFET™ II Power MOSFET product line, engineered specifically for high-frequency, high-efficiency switching power conversion in telecom infrastructure and data center power systems.

FAQ

What is the maximum continuous drain current at T_C = 100 °C?

The STB75NF75T4 supports 70 A continuous drain current at case temperature of 100 °C, as specified in Table 1 of the official datasheet (Rev 8, Feb 2007). This derating reflects thermal limits of the D²PAK package and ensures safe operation within SOA boundaries under sustained load.

Is the body diode suitable for synchronous rectification?

Yes-the body diode has measured t_rr = 132 ns and Q_rr = 660 nC at I_SD = 80 A, di/dt = 100 A/µs, and T_J = 150 °C. These values enable controlled commutation in synchronous buck and LLC secondary-side applications when paired with appropriate gate timing.

Does STB75NF75T4 require a gate resistor for stability?

A gate resistor of 4.7 Ω is used in the official switching time test circuit (Figure 15), confirming stable turn-on/turn-off behavior without oscillation. Lower values (<2.2 Ω) may cause ringing due to PCB trace inductance interacting with Q_gd; higher values (>10 Ω) increase switching losses disproportionately.

Can this MOSFET be used in avalanche mode repeatedly?

No-while 100% single-pulse avalanche tested to 700 mJ, the datasheet does not specify repetitive avalanche capability. The device is intended for normal switching operation; repeated avalanche stresses exceed design intent and may degrade reliability over time.

STB75NF75T4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ II

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 160 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB75NF75T4 FAQ

1.How can I place an order for STB75NF75T4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB75NF75T4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB75NF75T4 reliable?

The price and inventory of STB75NF75T4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB75NF75T4 is usually 5 days.

3.What payment methods are accepted for STB75NF75T4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB75NF75T4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB75NF75T4?

STB75NF75T4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB75NF75T4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB75NF75T4?

For technical support, including STB75NF75T4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB75NF75T4 requirements.

6.How does Aetrix verify that STB75NF75T4 is sourced from the original manufacturer or authorized distributors?

All STB75NF75T4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB75NF75T4 meets industry standards.

7.What is the process for return or replacement of STB75NF75T4?

All STB75NF75T4 units undergo pre-shipment inspection (PSI). If there is an issue with STB75NF75T4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB75NF75T4 part is unused and in its original packaging.

Return procedure for STB75NF75T4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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