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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB76NF80

Name: STB76NF80
Brand: STMicroelectronics
SKU: STB76NF80
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB76NF80

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB76NF80.pdf

Description:: MOSFET N-CH 80V 80A D2PAK

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Product details

Overview

STB76NF80 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in D²PAK (TO-263) package, rated for 80 V V_DS, 0.0095 Ω R_DS(on) max at V_GS = 10 V, and 80 A continuous drain current at T_C = 25 °C. It features 100% avalanche tested ruggedness, exceptional dv/dt capability, and is optimized for high-efficiency automotive switching applications including motor control and DC-DC conversion.

For engineers reviewing the STB76NF80 datasheet, STB76NF80 pinout, STB76NF80 application, or STB76NF80 equivalent, key selection criteria include its low on-resistance, high pulsed current rating (320 A), thermal resistance (R_thJC = 0.5 °C/W), and robust unclamped inductive switching performance under automotive temperature and stress conditions.

Technical Context

This MOSFET employs ST's "single feature size" strip-based STripFET™ II process, enabling high cell density and low R_DS(on) while maintaining excellent safe operating area (SOA) and avalanche energy rating (E_AS = 700 mJ). Its gate threshold voltage (V_GS(th) = 2–4 V) supports standard 10 V gate drive, and its dynamic parameters-including Q_g = 117 nC, C_iss = 3700 pF, and t_r/t_f = 100/30 ns-support fast, efficient hard-switching up to high frequencies.

The integrated body diode exhibits low forward voltage (V_SD = 1.5 V at I_SD = 80 A) and controlled reverse recovery (t_rr = 132 ns, Q_rr = 660 nC), making it suitable for synchronous rectification and freewheeling in inductive loads without external Schottky supplementation in many automotive designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage for 12 V/24 V automotive systems with transient margin
R_DS(on) max	0.011 Ω at V_GS = 10 V - Enables ≤0.7 W conduction loss at 80 A, critical for thermal management
I_D cont	80 A at T_C = 25 °C - Supports high-current motor drivers and starter solenoid interfaces
E_AS	700 mJ - Confirmed single-pulse avalanche energy ensures reliability during inductive turn-off stress
dv/dt	12 V/ns - High immunity to false triggering in noisy automotive environments
R_thJC	0.5 °C/W - Allows direct heatsink mounting for high-power dissipation up to 300 W
Q_g	117 nC - Determines gate driver power requirement and switching speed trade-off

Pinout & Package

D²PAK (TO-263) package: surface-mount, 3-terminal, single-die power package with exposed drain tab for thermal and electrical connection. Tab is electrically connected to Drain (Pin 2).

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≥10 V drive for full enhancement; sensitive to ESD (±20 V rating)
2 (D)	Drain	Main high-side power path; tied to exposed metal tab for low-inductance, low-thermal-resistance connection
3 (S)	Source	Power return and reference node; defines local ground for gate drive loop

Key Features

Feature	Design Value
100% avalanche tested	Guarantees ruggedness against inductive kickback without derating; eliminates need for external snubbers in many automotive loads
Exceptional dv/dt capability	12 V/ns rating prevents spurious turn-on during fast transients common in alternator/load-dump scenarios
Low R_DS(on) × Q_g figure of merit	~1.37 Ω·nC - Balances conduction and switching losses for high-efficiency 10–100 kHz switching
High pulsed current rating	I_DM = 320 A - Supports short-duration peak loads such as starter motor cranking or ABS actuator pulses

Applications

Automotive Motor Control

DC-DC Converter Primary Switch

Use Scenario: Driving brushed DC motors in power windows, seat adjusters, and HVAC blowers in 12 V vehicle architectures.

IC Role / Device Role / Timing Role: High-side or low-side power switch handling bidirectional 40–80 A load currents with PWM duty cycling.

Use Value: Low R_DS(on) minimizes heat generation in confined cabin modules; avalanche rating handles back-EMF without failure.

Use Scenario: Primary-side switching element in 12 V to 5 V/3.3 V buck converters for infotainment and ADAS ECUs.

IC Role / Device Role / Timing Role: Fast-turning, high-current switch operating at 200–500 kHz with tight duty cycle control.

Use Value: Low Q_g and fast t_r/t_f reduce gate drive losses; SOA compliance enables stable operation under line/load transients.

Automotive Lighting Driver

Starter Solenoid Interface

Use Scenario: High-side switch for LED headlamp arrays requiring precise current regulation and dimming via PWM.

IC Role / Device Role / Timing Role: Constant-current switch modulated at >1 kHz to eliminate visible flicker and support adaptive driving beam logic.

Use Value: Tight V_GS(th) distribution (2–4 V) ensures consistent turn-on across temperature; low V_SD reduces forward drop in series LED strings.

Use Scenario: Interface between microcontroller GPIO and high-current starter solenoid coil (≥100 A inrush).

IC Role / Device Role / Timing Role: Robust, low-impedance switch replacing electromechanical relays to improve lifetime and response time.

Use Value: 320 A pulsed rating accommodates cold-cranking surges; R_thJC = 0.5 °C/W allows direct PCB copper pour heatsinking without discrete heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF3205PbF	V_DS = 55 V, R_DS(on) = 0.008 Ω, Q_g = 71 nC - lower voltage rating, lower gate charge	Not suitable for 80 V automotive transients; limited to 24 V industrial or 12 V non-transient systems	Select only if system max V_DD < 45 V and gate drive is current-limited or low-voltage.
STP75NF75	V_DS = 75 V, R_DS(on) = 0.0095 Ω, E_AS = 520 mJ - same R_DS(on), lower avalanche energy, older STripFET™ I process	Lower ruggedness margin in unclamped inductive switching; reduced thermal margin at high ambient	Acceptable for cost-sensitive 12 V applications where full 80 V transient immunity is not required.

Compared with IRF3205PbF and STP75NF75, STB76NF80 provides superior 80 V transient tolerance, higher avalanche energy, and better thermal performance-making it the preferred choice for modern automotive power stages demanding long-term reliability under harsh conditions.

Availability

STB76NF80 is available at Aetrix Electronics and suitable for automotive motor control, DC-DC converter primary switching, LED lighting drivers, and starter solenoid interface applications requiring stable component supply and long-lifecycle support.

Supply support for STB76NF80 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, power devices, and microcontrollers for automotive, industrial, and consumer markets.

The STripFET™ II product line delivers high-current, high-voltage power MOSFETs optimized for ruggedness, efficiency, and manufacturability in automotive-grade power switching applications-specifically targeting engine control units, body electronics, and electrified chassis systems.

FAQ

What is the maximum junction temperature for continuous operation?

The STB76NF80 has a specified operating junction temperature range of –55 °C to +175 °C. For reliable continuous operation, maximum T_J should be limited to 150 °C to maintain long-term parametric stability and avoid accelerated wear-out mechanisms. Derating begins at T_C = 25 °C using the 2.0 W/°C factor beyond 25 °C case temperature.

Is the STB76NF80 suitable for synchronous rectification?

Yes-the integrated body diode has characterized reverse recovery (t_rr = 132 ns, Q_rr = 660 nC) and low forward voltage (V_SD = 1.5 V at 80 A), enabling use in synchronous rectifier topologies up to ~200 kHz. However, for optimal efficiency above 100 kHz, a dedicated low-Q_rr Schottky or GaN FET may yield lower total losses.

Does this MOSFET require a gate resistor for automotive applications?

Yes-a gate resistor (typically 4.7–10 Ω) is recommended to dampen ringing, limit peak gate current, and control dV/dt during switching. The datasheet specifies switching times with R_G = 4.7 Ω; omitting it risks oscillation, EMI, and gate oxide overstress due to parasitic inductance in automotive harnesses and PCB layouts.

How is the D²PAK drain tab electrically configured?

The exposed metal tab on the D²PAK package is internally connected to the Drain (Pin 2) terminal. It must be soldered to a large copper pour or heatsink, which becomes part of the high-side power path and primary thermal conduction route. Electrical isolation from other layers is required unless the heatsink is intentionally tied to the drain potential.

STB76NF80 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ II

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 160 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB76NF80 FAQ

1.How can I place an order for STB76NF80 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB76NF80 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB76NF80 reliable?

The price and inventory of STB76NF80 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB76NF80 is usually 5 days.

3.What payment methods are accepted for STB76NF80?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB76NF80 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB76NF80?

STB76NF80 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB76NF80 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB76NF80?

For technical support, including STB76NF80 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB76NF80 requirements.

6.How does Aetrix verify that STB76NF80 is sourced from the original manufacturer or authorized distributors?

All STB76NF80 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB76NF80 meets industry standards.

7.What is the process for return or replacement of STB76NF80?

All STB76NF80 units undergo pre-shipment inspection (PSI). If there is an issue with STB76NF80, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB76NF80 part is unused and in its original packaging.

Return procedure for STB76NF80:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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