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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB7ANM60N

Name: STB7ANM60N
Brand: STMicroelectronics
SKU: STB7ANM60N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB7ANM60N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB7ANM60N.pdf

Description:: MOSFET N-CH 600V 5A D2PAK

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Product details

Overview

STB7ANM60N from STMicroelectronics is an AEC-Q101-qualified N-channel 600 V, 900 mΩ (max), 5 A Power MOSFET in DPAK (TO-252) package, built on MDmesh™ II vertical strip technology. It delivers ultra-low gate charge (14 nC) and input capacitance (363 pF), enabling high-efficiency hard-switching and resonant topologies in automotive and industrial power converters.

For engineers reviewing the STB7ANM60N datasheet, STB7ANM60N pinout, STB7ANM60N application, or STB7ANM60N equivalent, this device is selected for high-voltage DC-DC stages, auxiliary power supplies, and motor control inverters where avalanche ruggedness, low R_DS(on), and fast switching (t_d(off) = 26 ns) are critical.

Technical Context

This MOSFET employs ST's second-generation MDmesh™ II process, combining a vertical drift region with optimized strip layout to minimize conduction and switching losses simultaneously. Its 100% unclamped inductive avalanche tested capability (E_AS = 119 mJ) supports robust operation under transient overloads without external snubbers.

The device features low intrinsic gate resistance (5.4 Ω) and tightly controlled threshold voltage (2–4 V), ensuring stable turn-on behavior across temperature (–55 °C to 150 °C). Its C_oss eq. of 130 pF enables predictable soft-recovery characteristics in ZVS circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Supports 400 V DC bus designs with ≥50% voltage margin for surge immunity.
R_DS(on) max	900 mΩ at V_GS = 10 V, I_D = 2.5 A - Enables <1.1 W conduction loss at 5 A continuous drain current.
Q_g	14 nC - Reduces gate drive power and allows use of smaller, lower-cost drivers in high-frequency SMPS.
C_iss	363 pF at V_DS = 50 V - Low input capacitance minimizes Miller effect and improves switching controllability.
E_AS	119 mJ (single-pulse, T_J = 25 °C) - Withstands repetitive energy transients in automotive load-dump conditions.
R_thJC	2.78 °C/W - Enables 45 W power dissipation with ≤125 °C junction rise above case, supporting compact heatsink design.
dv/dt rating	15 V/ns - Ensures reliable commutation in noisy high-di/dt environments without spurious turn-on.

Pinout & Package

DPAK (TO-252) package: surface-mount, single-ended lead frame with exposed drain tab for thermal and electrical connection. Standard type A2 variant per DS9116 Rev 4, featuring 6.0–6.2 mm body width (D), 6.4–6.6 mm body length (E), and 2.16–2.41 mm lead pitch (e).

Pin/Terminal	Circuit Role	Design Meaning
TAB (Drain)	Main power output terminal / heat sink interface	Exposed copper pad electrically connected to drain; must be soldered to PCB copper pour for thermal management and low-inductance return path.
Pin 1 (Gate)	Control input	Low-impedance gate node requiring <5.4 Ω series resistance to damp oscillation; sensitive to ESD (±25 V absolute max).
Pin 3 (Source)	Power reference / return path	Common source node for gate drive loop; must be routed with minimal inductance to reduce switching overshoot and improve stability.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications per stress test requirements including HTOL, TC, and UHAST.
100% avalanche tested	Each unit undergoes unclamped inductive switching test at I_AR = 2 A, confirming ruggedness without derating.
Low Q_gd/Q_gs ratio	7.7 nC / 2.7 nC ≈ 2.85 - Improves hard-switching immunity and reduces Miller-induced false turn-on risk.
Low C_oss eq.	130 pF - Enables faster V_DS fall time and lower capacitive switching loss in high-frequency converters (>100 kHz).
Enhanced diode recovery	Q_rr = 1.5 µC (T_J = 25 °C), trr = 213 ns - Reduces reverse recovery loss and EMI in synchronous rectifier and half-bridge configurations.

Applications

Automotive HVAC Blower Control

Industrial AC-DC Auxiliary Supply

Use Scenario: High-side switch in 12 V/24 V blower motor driver with PWM speed regulation and overcurrent protection.

IC Role / Device Role / Timing Role: Main power switch handling up to 5 A continuous load; operates at 20–50 kHz with fast turn-off (t_f = 12 ns) to limit shoot-through risk.

Use Value: AEC-Q101 qualification ensures reliability in under-hood temperature cycling; low R_DS(on) reduces thermal stress on PCB copper.

Use Scenario: Primary-side switch in 600 V flyback converter powering microcontroller, sensors, and CAN transceivers in PLC modules.

IC Role / Device Role / Timing Role: High-voltage switching element with 600 V blocking capability; used in discontinuous conduction mode (DCM) with 65 kHz switching frequency.

Use Value: Low Q_g and C_iss enable efficient gate driving with low-power controllers; avalanche rating eliminates need for clamping diodes.

Server PSU Hold-Up Capacitor Charger

EV Onboard Charger (OBC) PFC Stage

Use Scenario: Inrush limiter and hold-up charger for bulk capacitor banks after AC-DC rectification in telecom/server PSUs.

IC Role / Device Role / Timing Role: Soft-start switch controlling pre-charge current into 400 V/1000 µF bus; rated for 20 A pulsed (I_DM) during startup.

Use Value: 100% avalanche-tested capability safely absorbs energy from capacitor charging transients without failure.

Use Scenario: Boost switch in 3.3 kW two-phase interleaved PFC stage operating at 65–100 kHz with digital control.

IC Role / Device Role / Timing Role: High-efficiency power switch with low conduction + switching loss trade-off; leverages low C_oss eq. for ZVS-assisted transitions.

Use Value: MDmesh™ II architecture achieves <0.8 Ω typical R_DS(on), reducing conduction loss by ~15% vs. first-gen 600 V MOSFETs at same die size.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP7NM60FD	600 V, 1.2 Ω max R_DS(on), 7 A, TO-220 package; no AEC-Q101, higher Q_g (22 nC)	Non-automotive industrial use only; requires larger heatsink due to higher R_DS(on) and TO-220 thermal resistance	Select when cost sensitivity outweighs automotive qualification and board space constraints.
IXTP50N10D2	100 V, 50 A, TO-220; incompatible voltage rating; not suitable for 400 V+ bus applications	Only viable in low-voltage (<150 V) DC-DC or motor drives - not a functional substitute	Reject for any 600 V system; included only to clarify non-interchangeability due to voltage mismatch.

Compared with STP7NM60FD, STB7ANM60N offers 25% lower R_DS(on), 36% lower Q_g, and automotive qualification - critical for space-constrained, thermally demanding, or safety-critical systems. IXTP50N10D2 is electrically incompatible due to 100 V rating versus required 600 V blocking.

Availability

STB7ANM60N is available at Aetrix Electronics and suitable for automotive HVAC systems, industrial AC-DC auxiliary supplies, and EV onboard charger PFC stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STB7ANM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to ST's MDmesh™ II high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in automotive and industrial power conversion systems up to 600 V.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STB7ANM60N supports 3 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS9116 Rev 4. This derating reflects thermal limits of the DPAK package and ensures safe operation within its SOA boundary at elevated ambient temperatures.

Is the source-drain diode suitable for synchronous rectification?

No - the integrated body diode has t_rr = 213 ns and Q_rr = 1.5 µC at 25 °C, making it unsuitable for high-frequency synchronous rectification. External Schottky or GaN FETs are recommended for that function; this MOSFET is intended as a controlled switch, not a rectifier.

Does STB7ANM60N have a guaranteed minimum gate threshold voltage?

Yes - V_GS(th) is guaranteed between 2 V and 4 V (min/max) at I_D = 250 µA, per Table 4. This ensures reliable turn-on with standard 10 V gate drivers while preventing accidental activation from noise below 2 V.

Can STB7ANM60N replace STD7ANM60N in existing designs?

Yes - STB7ANM60N is the updated orderable part number for the same silicon and DPAK package as STD7ANM60N, per DS9116 Rev 4 revision history. Pinout, ratings, and performance are identical; only marking and ordering designation changed.

STB7ANM60N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 900mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250mA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 363 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB7ANM60N FAQ

1.How can I place an order for STB7ANM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STB7ANM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB7ANM60N reliable?

The price and inventory of STB7ANM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB7ANM60N is usually 5 days.

3.What payment methods are accepted for STB7ANM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB7ANM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB7ANM60N?

STB7ANM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB7ANM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB7ANM60N?

For technical support, including STB7ANM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB7ANM60N requirements.

6.How does Aetrix verify that STB7ANM60N is sourced from the original manufacturer or authorized distributors?

All STB7ANM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB7ANM60N meets industry standards.

7.What is the process for return or replacement of STB7ANM60N?

All STB7ANM60N units undergo pre-shipment inspection (PSI). If there is an issue with STB7ANM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB7ANM60N part is unused and in its original packaging.

Return procedure for STB7ANM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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