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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB7N52K3

Name: STB7N52K3
Brand: STMicroelectronics
SKU: STB7N52K3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB7N52K3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB7N52K3.pdf

Description:: MOSFET N-CH 525V 6A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:4,761

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Product details

Overview

STD7N52K3 from STMicroelectronics is an N-channel 525 V, 730 mΩ typ. (850 mΩ max.), 6 A MDmesh K3 Power MOSFET in DPAK (TO-252) package, optimized for high-voltage switching in offline SMPS, PFC stages, and industrial inverters. It delivers 110 mJ single-pulse avalanche energy, 12 V/ns di/dt-rated diode recovery, and Zener-protected gate.

For engineers reviewing the STD7N52K3 datasheet, STD7N52K3 pinout, STD7N52K3 application, or STD7N52K3 equivalent, key selection criteria include its 525 V V_DS, 730 mΩ R_DS(on) at 10 V_GS, 220 ns reverse recovery time, and DPAK thermal resistance of 1.39 °C/W - all critical for high-efficiency, high-reliability flyback and resonant converters.

Technical Context

This MDmesh K3 device employs a vertically optimized silicon structure to reduce specific on-resistance while maintaining robust 525 V breakdown voltage. Its low C_iss (870 pF typ.) and ultra-low C_rss (13 pF) minimize switching losses and improve EMI behavior in hard-switched topologies.

The integrated Zener-protected gate withstands ±30 V transient stress, and its improved body diode exhibits 1.6 V forward drop at 6 A with 1.8 µC Q_rr - enabling snubberless operation in continuous conduction mode (CCM) PFC and reducing dead-time sensitivity in half-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	525 V - supports universal-input offline SMPS up to 400 V DC bus with 30% margin
R_DS(on) max	850 mΩ at V_GS = 10 V, I_D = 3 A - enables <1.5 W conduction loss at 3 A in TO-252
I_D cont @ T_C=100°C	3.8 A - defines real-world current capability under heatsink-limited thermal conditions
E_AS	110 mJ (T_J = 25°C) - ensures unclamped inductive switching survival in relay drivers and motor controls
dv/dt rating	12 V/ns - prevents spurious turn-on in high-noise bridge-leg environments
Q_g	33 nC - determines gate driver power requirement and switching speed trade-off
trr	220 ns @ I_SD = 6 A, di/dt = 100 A/µs - sets minimum dead time in synchronous rectification

Pinout & Package

DPAK (TO-252) package with exposed drain tab for low thermal resistance (R_thJC = 1.39 °C/W) and surface-mount compatibility. Tab is electrically connected to Drain.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≤±30 V drive; Zener-clamped internally
2 (TAB)	Drain	Main high-side power terminal; thermally coupled to PCB copper pour via exposed tab
3 (S)	Source	Reference node for gate drive; carries full load current and diode reverse recovery charge

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse E_AS ≥ 110 mJ across production lot - eliminates need for external snubbers in inductive switching
Extremely high dv/dt capability	12 V/ns rating prevents false triggering during fast voltage transients in bridge configurations
Very low intrinsic capacitance	C_iss = 870 pF and C_rss = 13 pF reduce Miller effect and enable >300 kHz operation in LLC resonant converters
Zener-protected gate	Integrated ±30 V gate protection eliminates need for external Zener clamp in gate driver circuits
Improved diode reverse recovery	Q_rr = 1.8 µC and trr = 220 ns lower switching losses vs legacy K2 devices in CCM PFC designs

Applications

Industrial AC-DC Power Supplies

Server & Telecom PSU PFC Stages

Use Scenario: 1 kW active PFC front-end operating at 100 kHz with universal input (90–264 VAC).

IC Role / Device Role / Timing Role: High-side switch in boost topology; handles 6 A RMS input current and 525 V blocking.

Use Value: Low R_DS(on) reduces conduction loss by 18% vs comparable 1 Ω devices; fast trr minimizes dead-time losses.

Use Scenario: 3 kW telecom rectifier with interleaved PFC and digital control.

IC Role / Device Role / Timing Role: Primary switching element in dual-phase boost converter; operates at 70 kHz with 120° phase shift.

Use Value: 12 V/ns dv/dt immunity prevents shoot-through during phase transitions; Zener gate protection simplifies driver design.

Motor Drive Inverter Legs

High-Voltage LED Driver Circuits

Use Scenario: 750 W BLDC inverter for HVAC compressors using 600 V DC bus.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg; commutates 6 A peak motor current.

Use Value: 110 mJ E_AS withstands inductive kickback during fault conditions without external clamping.

Use Scenario: Constant-current 400 V LED string driver for street lighting with dimming control.

IC Role / Device Role / Timing Role: Main series-pass switch regulating current through 120 V LED stack.

Use Value: 525 V V_DS provides 30% overvoltage margin against line surges; low C_oss improves PWM efficiency above 1 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP7N52K3	TO-220 package; identical electrical specs but higher R_thJA (62 °C/W vs 50 °C/W) and no exposed drain tab	Better suited for prototyping or low-volume heatsink-mounted designs where PCB space is not constrained	Select when mechanical mounting flexibility outweighs thermal performance needs
IPP60R099C7	650 V Si MOSFET; R_DS(on) = 99 mΩ but higher Q_g (71 nC); no integrated Zener gate protection	Requires external gate clamp; better for high-frequency (>200 kHz) resonant converters needing lower R_DS(on)	Choose only if system-level gate driver includes Zener clamping and thermal design accommodates higher Q_g losses

Compared with STP7N52K3, STD7N52K3 offers superior thermal performance in compact layouts; versus IPP60R099C7, it trades higher R_DS(on) for guaranteed avalanche ruggedness, integrated gate protection, and lower Q_g - making it more robust in cost-sensitive industrial SMPS.

Availability

STD7N52K3 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server telecom PSUs, and motor drive inverter legs requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STD7N52K3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STD7N52K3 belongs to the MDmesh K3 high-voltage MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching power supplies and industrial motor control systems.

FAQ

Is STD7N52K3 pin-compatible with earlier MDmesh K2 devices like STD7N52K2?

No. While both use DPAK packaging, STD7N52K3 features revised internal layout and optimized die structure for lower R_DS(on) and improved diode recovery. Pin assignment (G-D-S) remains identical, but gate charge profile and dynamic parameters differ - requiring revalidation of gate driver sizing and dead-time settings.

What is the maximum recommended gate resistor value for reliable switching at 100 kHz?

Based on Q_g = 33 nC and typical gate driver output impedance, a 4.7 Ω series resistor achieves optimal trade-off between switching speed (td(on)/td(off) ≈ 13/36 ns) and ringing suppression. Values above 10 Ω increase switching losses significantly; below 2.2 Ω risk overshoot due to PCB inductance coupling.

Does the "100% avalanche tested" specification cover repetitive avalanche conditions?

No. The 100% test verifies single-pulse avalanche capability (E_AS = 110 mJ). Repetitive avalanche is not rated - the device must operate within SOA limits defined in Figure 1, with pulse width constrained by junction temperature rise. System-level protection (e.g., overcurrent shutdown) is required for fault conditions.

Can STD7N52K3 be used in synchronous rectification applications?

Not as a synchronous rectifier. Its body diode has improved trr and Q_rr, but it lacks the low forward voltage and bidirectional conduction optimization of dedicated SR MOSFETs. It functions reliably as a controlled switch in secondary-side active clamp or primary-side regulation, but external Schottky diodes remain preferred for rectification below 100 V.

STB7N52K3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH3™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 525 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 980mOhm @ 3.1A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 737 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 90W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STB7N52K3 FAQ

1.How can I place an order for STB7N52K3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB7N52K3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB7N52K3 reliable?

The price and inventory of STB7N52K3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB7N52K3 is usually 5 days.

3.What payment methods are accepted for STB7N52K3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB7N52K3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB7N52K3?

STB7N52K3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB7N52K3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB7N52K3?

For technical support, including STB7N52K3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB7N52K3 requirements.

6.How does Aetrix verify that STB7N52K3 is sourced from the original manufacturer or authorized distributors?

All STB7N52K3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB7N52K3 meets industry standards.

7.What is the process for return or replacement of STB7N52K3?

All STB7N52K3 units undergo pre-shipment inspection (PSI). If there is an issue with STB7N52K3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB7N52K3 part is unused and in its original packaging.

Return procedure for STB7N52K3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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