STMicroelectronics STB7NK80Z-1

Overview

STB7NK80Z-1 from STMicroelectronics is a Zener-protected N-channel SuperMESH Power MOSFET rated for 800 V drain-source voltage, 1.8 Ω maximum R_DS(on), and 5.2 A continuous drain current at T_C = 25 °C. It delivers high dv/dt capability (4.5 V/ns), 100% avalanche-tested ruggedness, and low gate charge (40–56 nC), making it suitable for high-voltage flyback and resonant SMPS primary-side switching.

For engineers reviewing the STB7NK80Z-1 datasheet, STB7NK80Z-1 pinout, STB7NK80Z-1 application, or STB7NK80Z-1 equivalent, key selection criteria include its I²PAK package thermal resistance (R_thJC = 1 °C/W), unclamped inductive avalanche energy (E_AS = 210 mJ), and Zener-protected gate structure - critical for reliability in offline AC-DC converters and industrial motor drive snubbers.

Technical Context

This device implements ST's SuperMESH process - an evolution of PowerMESH - optimizing cell pitch and drift region doping to reduce on-resistance while preserving high-voltage blocking integrity. Its Zener-protected gate integrates a monolithic 30 V clamp between gate and source, eliminating external gate protection components.

The MOSFET supports fast switching with typical turn-on delay of 20 ns and fall time of 20 ns under 400 V/2.6 A resistive load conditions, enabled by low C_iss (1138 pF) and minimized Q_gd/Q_gs ratio. Its body diode exhibits 530 ns reverse recovery time and 3.31 µC Q_rr at 150 °C, enabling hard-switched PFC stages without excessive diode loss.

Key Specifications

Pinout & Package

The STB7NK80Z-1 is housed in an I²PAK (TO-262) package with three terminals: Drain (Tab), Gate (Pin 1), Source (Pin 3). The metal tab is electrically connected to the Drain, requiring insulated mounting in high-voltage applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP7NK80Z and FQP8N80C, the STB7NK80Z-1 provides superior thermal performance via I²PAK packaging and guaranteed gate robustness - critical for long-lifetime, high-reliability offline power supplies where field failure root cause analysis points to gate oxide rupture or avalanche-induced wear-out.

Availability

STB7NK80Z-1 is available at Aetrix Electronics and suitable for AC-DC adapters, industrial PLC power supplies, LED driver bulk switches, and motor drive snubbers requiring stable component supply and long-term manufacturability.

Supply support for STB7NK80Z-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and analog/mixed-signal ICs for automotive, industrial, and consumer markets.

The STB7NK80Z-1 belongs to ST's SuperMESH Power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching power supplies operating up to 100 kHz with stringent safety and surge immunity requirements.

FAQ

Is STB7NK80Z-1 RoHS-compliant and halogen-free?

Yes. STB7NK80Z-1 meets RoHS Directive 2011/65/EU and is manufactured in ST's ECOPACK2-compliant I²PAK package, which is both lead-free and halogen-free per IEC 61249-2-21. Full compliance documentation is available in ST's ECOPACK database at www.st.com/ecopack.

What is the maximum safe operating area (SOA) limitation at 100 °C case temperature?

At T_C = 100 °C, the continuous drain current is limited to 3.3 A (per Table 1), and the SOA boundary is defined by thermal constraints rather than secondary breakdown. Pulse operation up to 20.8 A is permitted only for pulse widths ≤100 µs and duty cycles ≤1%, as confirmed in Figure 1 of DS2861 Rev 7.

Can STB7NK80Z-1 replace STP7NK80Z in existing TO-220 layouts?

No - STB7NK80Z-1 uses an I²PAK (TO-262) footprint incompatible with TO-220 pads. While electrically interchangeable, mechanical redesign is required: I²PAK has 2.54 mm pin pitch vs. TO-220's 5.08 mm, and the drain tab orientation differs. ST provides land pattern drawings in Section 4.1 of DS2861.

Does the Zener gate protection affect gate threshold voltage stability over temperature?

No. The Zener clamp operates only during overvoltage transients (>±30 V); it does not influence normal gate biasing. V_GS(th) remains stable from –50 °C to 150 °C, with normalized variation ≤±10% (Figure 10), ensuring consistent turn-on behavior across industrial temperature ranges.