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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB80N4F6AG

Name: STB80N4F6AG
Brand: STMicroelectronics
SKU: STB80N4F6AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB80N4F6AG

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB80N4F6AG.pdf

Description:: MOSFET N-CH 40V 80A D2PAK

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Product details

Overview

STB80N4F6AG from STMicroelectronics is an AEC-Q101-qualified automotive-grade N-channel 40 V Power MOSFET in D²PAK (TO-263) package, featuring 5.5 mΩ typ. R_DS(on) at V_GS = 10 V, 80 A continuous drain current at T_C = 25 °C, and 149 mJ single-pulse avalanche energy - deployed in high-current DC-DC converter primary switches and motor control H-bridge legs.

For engineers reviewing the STB80N4F6AG datasheet, STB80N4F6AG pinout, STB80N4F6AG application, or STB80N4F6AG equivalent, key selection criteria include R_DS(on) stability over temperature, gate charge (36 nC), thermal resistance (2.14 °C/W j-case), avalanche ruggedness, and D²PAK thermal pad layout compatibility.

Technical Context

This device uses STripFET™ F6 trench-gate technology to achieve low conduction loss and fast switching with minimal gate drive power. Its 160 pF Crss and 2150 pF Ciss support high-frequency operation up to 500 kHz in synchronous rectification and PWM motor drives.

The MOSFET integrates a robust body diode with 41.1 ns trr and 43.6 nC Q_RR, enabling efficient unclamped inductive switching in automotive solenoid drivers and EPS systems without external freewheeling diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/24 V automotive battery rail protection and load switching
R_DS(on) typ.	5.5 mΩ @ V_GS = 10 V - Enables ≤ 17.6 W conduction loss at 80 A, reducing heatsink requirements
Q_g	36 nC - Low gate charge allows fast turn-on with standard 1 A gate drivers, minimizing switching loss
E_AS	149 mJ - Supports repetitive inductive energy absorption in starter relays and fuel injector drivers
R_thj-case	2.14 °C/W - Enables 70 W dissipation at ΔT = 150 °C, supporting high-power density PCB layouts
trr	41.1 ns - Fast body diode recovery reduces cross-conduction loss in half-bridge configurations

Pinout & Package

Supplied in D²PAK (TO-263) package with exposed drain tab for enhanced thermal performance and mechanical mounting via soldered tab. Package outline conforms to JEDEC TO-263AB standard with 3-pin configuration (Drain, Gate, Source).

Pin/Terminal	Circuit Role	Design Meaning
TAB (Drain)	Main current-carrying terminal, electrically connected to die drain	Thermally and electrically coupled to PCB copper pour; requires full-solder coverage for R_thj-pcb ≤ 35 °C/W
G (Gate)	Control electrode for channel formation	Low-impedance input (±20 V rating); 36 nC total charge demands controlled slew rate to limit EMI
S (Source)	Reference node for gate drive and current return path	Must be routed with low-inductance trace to minimize V_GS noise during switching transitions

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive underhood applications including engine control modules and transmission ECUs
Very low R_DS(on)	5.5 mΩ typ. enables >97% efficiency in 48 V BLDC motor inverters at 50 A load
High avalanche ruggedness	149 mJ E_AS supports safe operation during load dump and inductive kick events without snubbers
Low gate charge	36 nC Q_g reduces driver power consumption and simplifies gate driver IC selection (e.g., STGAP2S)

Applications

Automotive Engine Control Unit (ECU)

Electric Power Steering (EPS)

Use Scenario: High-side switching of fuel injectors and ignition coils in 12 V/24 V engine management systems.

IC Role / Device Role / Timing Role: Power switch controlling pulsed coil current with precise timing resolution down to 1 µs.

Use Value: 40 V V_DS and 149 mJ E_AS ensure reliable operation during battery transients and inductive flyback.

Use Scenario: Half-bridge leg in 48 V EPS motor inverter driving brushless DC torque motor.

IC Role / Device Role / Timing Role: Synchronous rectifier and PWM-controlled power stage switch operating at 20–50 kHz.

Use Value: 5.5 mΩ R_DS(on) and 41.1 ns trr reduce conduction + switching losses, improving system thermal margin by ≥12 °C.

Onboard Charger (OBC) DC-DC Stage

Commercial HVAC Blower Drive

Use Scenario: Primary-side switch in isolated 3.3 kW LLC resonant DC-DC converter for EV battery charging.

IC Role / Device Role / Timing Role: High-efficiency hard-switched MOSFET handling 80 A peak currents with tight duty cycle control.

Use Value: 2.14 °C/W R_thj-case and 70 W P_TOT allow direct heatsink mounting without thermal interface material degradation.

Use Scenario: Low-side switch in 3-phase inverter for 2.2 kW HVAC blower motor in commercial building systems.

IC Role / Device Role / Timing Role: Continuous-duty power switch rated for 56 A at T_C = 100 °C ambient.

Use Value: AEC-Q101 qualification ensures long-term reliability in thermally demanding indoor environments with 15+ year service life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB4115PBF	R_DS(on) = 4.5 mΩ (lower), Q_g = 120 nC (higher), no AEC-Q101 certification	Industrial UPS only; not qualified for automotive safety-critical functions	Select when maximum efficiency outweighs qualification requirements and gate drive capability permits higher Q_g
IPB80N04S4-03	R_DS(on) = 3.0 mΩ, Q_g = 52 nC, AEC-Q101 qualified, same D²PAK package	Higher current density but increased gate drive demand and cost	Prefer for next-gen 48 V systems requiring <3 mΩ R_DS(on) and validated automotive compliance

Compared with IRFB4115PBF and IPB80N04S4-03, STB80N4F6AG delivers optimal balance of low R_DS(on), moderate Q_g, and full AEC-Q101 compliance - making it the preferred choice for cost-sensitive, thermally constrained automotive power stages where gate drive headroom is limited.

Availability

STB80N4F6AG is available at Aetrix Electronics and suitable for automotive engine control units, electric power steering systems, and onboard charger DC-DC converters requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for STB80N4F6AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This part belongs to the STripFET™ F6 Power MOSFET product line, engineered specifically for high-efficiency, high-reliability automotive power conversion and motor control applications demanding AEC-Q101 compliance and robust avalanche performance.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STB80N4F6AG supports 56 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the official datasheet (DocID027978 Rev 2). This derating reflects thermal limitations of the D²PAK package and must be verified against actual board-level thermal design using the 2.14 °C/W R_thj-case value.

Is the body diode suitable for synchronous rectification?

Yes - the integrated source-drain diode has 41.1 ns reverse recovery time (trr) and 43.6 nC Q_RR at I_SD = 80 A, enabling use in synchronous rectification topologies up to 200 kHz. However, external Schottky diodes are recommended for ultra-low forward voltage requirements below 0.8 V.

Does this MOSFET require a gate resistor for safe operation?

A gate resistor is required to control dV/dt and prevent parasitic oscillation. With 36 nC Q_g and typical gate driver output impedance, a 4.7 Ω resistor achieves ~10.5 ns turn-on delay and 7.6 ns rise time per Figure 15 test circuit - values validated in automotive-grade designs per AEC-Q101 stress testing.

Can STB80N4F6AG replace STB75NF55-1 in existing designs?

No - STB75NF55-1 is a 55 V, 75 A device with different R_DS(on) (6.5 mΩ), gate charge (85 nC), and thermal resistance (2.5 °C/W). While both are D²PAK-packaged N-MOSFETs, STB80N4F6AG's lower V_DS and higher current rating necessitate revalidation of SOA, avalanche margin, and gate drive strength in legacy 55 V systems.

STB80N4F6AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2150 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 70W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STB80N4F6AG FAQ

1.How can I place an order for STB80N4F6AG through Aetrix?

Please submit a Request for Quotation (RFQ) for STB80N4F6AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB80N4F6AG reliable?

The price and inventory of STB80N4F6AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB80N4F6AG is usually 5 days.

3.What payment methods are accepted for STB80N4F6AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB80N4F6AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB80N4F6AG?

STB80N4F6AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB80N4F6AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB80N4F6AG?

For technical support, including STB80N4F6AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB80N4F6AG requirements.

6.How does Aetrix verify that STB80N4F6AG is sourced from the original manufacturer or authorized distributors?

All STB80N4F6AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB80N4F6AG meets industry standards.

7.What is the process for return or replacement of STB80N4F6AG?

All STB80N4F6AG units undergo pre-shipment inspection (PSI). If there is an issue with STB80N4F6AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB80N4F6AG part is unused and in its original packaging.

Return procedure for STB80N4F6AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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