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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB80NE03L-06T4

Name: STB80NE03L-06T4
Brand: STMicroelectronics
SKU: STB80NE03L-06T4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB80NE03L-06T4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB80NE03L-06T4.pdf

Description:: MOSFET N-CH 30V 80A D2PAK

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Product details

Overview

STB80NE03L-06 from STMicroelectronics is an N-channel 30V Power MOSFET in D²PAK (TO-263) package, rated for 80A continuous drain current at 25°C and 60A at 100°C, with R_DS(on) ≤ 0.006Ω at V_GS = 10V. It features exceptional dv/dt capability (7 V/ns), 100% avalanche tested (E_AS = 600 mJ), and low gate charge (Q_g = 95 nC), enabling high-efficiency switching in DC-DC converters and motor drives.

For engineers reviewing the STB80NE03L-06 datasheet, STB80NE03L-06 pinout, STB80NE03L-06 application, or STB80NE03L-06 equivalent, key selection criteria include its 30V V_DS, 0.005Ω typical R_DS(on), 150W power dissipation, rugged unclamped inductive switching capability, and D²PAK thermal performance (R_thJC = 1°C/W).

Technical Context

This MOSFET employs ST's StripFET™ II process with single-feature-size strip geometry, delivering high cell density for ultra-low on-resistance and improved manufacturing reproducibility. Its internal structure supports robust unclamped inductive switching with 80A repetitive avalanche current and 600mJ single-pulse energy rating.

The device operates across -55°C to +175°C junction temperature range, exhibits low gate threshold voltage (1.0–2.5V), and integrates a fast-recovery source-drain diode (t_rr = 75 ns, Q_rr = 0.14 nC) optimized for synchronous rectification and freewheeling in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12V/24V automotive and industrial bus applications
R_DS(on)	0.005 Ω (typ) @ V_GS = 10 V - Enables <1W conduction loss at 40A, critical for thermally constrained PCBs
I_D (cont)	80 A @ T_C = 25°C - Supports high-current load switching without external heatsink in short-duration duty cycles
E_AS	600 mJ - Confirmed single-pulse avalanche energy allows reliable operation under inductive turn-off stress
Q_g	95 nC - Low total gate charge reduces driver power demand and enables faster switching with standard gate drivers
dv/dt	7 V/ns - High immunity to parasitic turn-on in high-noise motor control and SMPS environments
R_thJC	1 °C/W - Enables direct case-to-heatsink thermal path for high-power dissipation up to 150W

Pinout & Package

Package: D²PAK (TO-263), surface-mount, thermally enhanced with exposed drain pad. Dimensions per JEDEC MO-211, lead-free ECOPACK® compliant.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current return path / thermal interface	Exposed metal tab electrically connected to Drain; must be soldered to large copper pour for thermal and electrical integrity
Source	Reference node for gate drive and current sensing	Low-inductance connection point for shunt resistor placement and gate driver ground reference
Gate	Control terminal for channel modulation	High-impedance input requiring low-ESR gate resistor (e.g., 4.7Ω) to damp ringing and control dI/dt

Key Features

Feature	Design Value
StripFET™ II process architecture	Enables 0.005Ω R_DS(on) in D²PAK without die size penalty, improving power density vs planar alternatives
100% unclamped inductive avalanche tested	Guarantees 80A I_AR and 600mJ E_AS - eliminates need for external snubbers in relay replacement and solenoid driving
Low Q_gd/Q_g ratio (44/95 nC)	Reduces Miller plateau duration, minimizing switching transition time and associated losses in hard-switched converters
Fast body diode (t_rr = 75 ns)	Supports synchronous rectification in buck converters and bidirectional current flow in H-bridge motor control

Applications

Automotive DC-DC Converters

Industrial Motor Drives

Use Scenario: 12V-to-5V/3.3V step-down converter in engine control units and infotainment systems.

IC Role / Device Role / Timing Role: Primary high-side switch operating at 200–500 kHz with synchronous rectification.

Use Value: 0.005Ω R_DS(on) minimizes conduction loss at 40A peak, while 7 V/ns dv/dt rating prevents false triggering from ignition noise.

Use Scenario: Half-bridge leg in 24V/48V BLDC motor controllers for HVAC actuators and power seats.

IC Role / Device Role / Timing Role: Low-side switching element handling 60A continuous current with fast freewheeling via integrated diode.

Use Value: 75 ns reverse recovery time and 0.14 nC Q_rr reduce switching loss and EMI during commutation transitions.

Server PSU OR-ing FETs

UPS Inverter Stages

Use Scenario: Hot-swap OR-ing diode replacement in redundant 12V server power distribution.

IC Role / Device Role / Timing Role: Bidirectional current-handling MOSFET controlled by ideal diode controller.

Use Value: Low R_DS(on) cuts forward drop to <0.2V at 80A, reducing heat generation versus Schottky solutions.

Use Scenario: Output stage switch in line-interactive UPS inverters converting 36V battery to 120/230V AC.

IC Role / Device Role / Timing Role: Hard-switched power switch in full-bridge topology with 50–60 Hz fundamental and 10–20 kHz carrier.

Use Value: 150W P_TOT and 1°C/W R_thJC allow sustained 60A operation with minimal heatsink volume.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30V Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404ZPBF	R_DS(on) = 0.004Ω (typ), but higher Q_g = 130 nC and no avalanche rating specified	Lacks guaranteed avalanche ruggedness; unsuitable for unclamped inductive loads	Prefer where gate drive strength permits higher Q_g and avalanche stress is absent
STP80NF03L-06	Same die, TO-220 package; identical R_DS(on), E_AS, and SOA, but R_thJC = 1.25°C/W	Lower thermal efficiency requires larger heatsink; not surface-mount compatible	Select when through-hole mounting or legacy board layout mandates TO-220

Compared with IRF1404ZPBF and STP80NF03L-06, STB80NE03L-06 uniquely combines D²PAK surface-mount compatibility, 1°C/W thermal resistance, and factory-verified 600mJ avalanche energy-making it optimal for space-constrained, high-reliability 30V switching designs.

Availability

STB80NE03L-06 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and UPS inverter stages requiring stable component supply and long-term lifecycle support.

Supply support for STB80NE03L-06 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's STripFET™ Power MOSFET product line, engineered specifically for high-current, low-voltage switching in automotive body electronics, industrial automation, and telecom power systems.

FAQ

Is STB80NE03L-06 still in active production?

No - STB80NE03L-06 is marked obsolete by STMicroelectronics as of the July 2006 datasheet revision. However, Aetrix Electronics maintains legacy inventory with full traceability and offers extended supply support including cross-reference guidance and last-time-buy planning for ongoing production programs.

What is the maximum safe operating area (SOA) for pulsed operation?

Per Figure 1 in the datasheet, the SOA supports 320A pulsed drain current at V_DS = 10V for pulse widths ≤ 10ms at T_C = 25°C. At 100°C case temperature, the pulsed current limit drops to 160A for the same duration, constrained by thermal runaway limits and R_DS(on) temperature coefficient.

Can this MOSFET replace a mechanical relay in 24V automotive circuits?

Yes - its 80A continuous rating, 320A pulsed capability, and 100% avalanche testing make it suitable for replacing 40A SPST relays in HVAC, lighting, and starter solenoid control. Gate drive must provide ≥10V with <100ns rise time and include negative turn-off bias to prevent shoot-through in half-bridge configurations.

Does the D²PAK package require special PCB layout considerations?

Yes - the exposed drain tab must connect to a minimum 400 mm² copper area (2 oz Cu, 2-layer) with ≥8 thermal vias (0.3mm diameter, 0.8mm pitch) to achieve the rated R_thJC = 1°C/W. Source and gate traces should be short and wide to minimize inductance; gate loop area must be <10 mm² to suppress oscillation.

STB80NE03L-06T4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6500 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB80NE03L-06T4 FAQ

1.How can I place an order for STB80NE03L-06T4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB80NE03L-06T4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB80NE03L-06T4 reliable?

The price and inventory of STB80NE03L-06T4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB80NE03L-06T4 is usually 5 days.

3.What payment methods are accepted for STB80NE03L-06T4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB80NE03L-06T4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB80NE03L-06T4?

STB80NE03L-06T4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB80NE03L-06T4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB80NE03L-06T4?

For technical support, including STB80NE03L-06T4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB80NE03L-06T4 requirements.

6.How does Aetrix verify that STB80NE03L-06T4 is sourced from the original manufacturer or authorized distributors?

All STB80NE03L-06T4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB80NE03L-06T4 meets industry standards.

7.What is the process for return or replacement of STB80NE03L-06T4?

All STB80NE03L-06T4 units undergo pre-shipment inspection (PSI). If there is an issue with STB80NE03L-06T4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB80NE03L-06T4 part is unused and in its original packaging.

Return procedure for STB80NE03L-06T4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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