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STMicroelectronics STB80NF03L-04-1

Part No.:
STB80NF03L-04-1
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet:
AetrixSTB80NF03L-04-1.pdf
Description:
MOSFET N-CH 30V 80A I2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,547

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Product details

Overview

STB80NF03L-04-1 from STMicroelectronics is an N-channel 30 V, 80 A Power MOSFET in I2PAK (TO-262) package with RDS(on) = 3.5 mΩ at VGS = 10 V, 100% avalanche tested, and exceptional dv/dt capability. It serves as a high-current, high-speed switching device in automotive lamp drivers, ABS actuators, and DC-DC converters.

For engineers reviewing the STB80NF03L-04-1 datasheet, STB80NF03L-04-1 pinout, STB80NF03L-04-1 application, or STB80NF03L-04-1 equivalent, key selection criteria include its 3.5 mΩ on-resistance at 10 V gate drive, 2.3 J single-pulse avalanche energy, 320 A pulsed drain current, and I2PAK thermal performance for high-reliability motor control and power conversion designs.

Technical Context

This MOSFET employs ST's StripFET™ II process with single-feature-size strip geometry, enabling high cell density and low RDS(on). Its rugged avalanche rating (EAS = 2.3 J) and 2 V/ns dv/dt immunity support unclamped inductive switching in safety-critical automotive subsystems.

The device features integrated body diode with trr = 75 ns and Qrr = 0.15 µC under specified conditions, and gate charge parameters (Qg = 85 nC, Qgd = 40 nC at VGS = 4.5 V) optimized for fast, low-loss switching in 12 V–24 V systems.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V - Maximum drain-source blocking voltage for 12 V automotive rail applications with margin
RDS(on)3.5 mΩ @ VGS = 10 V, ID = 40 A - Enables <1.4 W conduction loss at 80 A continuous current
ID (cont)80 A @ TC = 25 °C - Sustains full rated current with heatsink at standard test condition
EAS2.3 J - Confirmed single-pulse avalanche energy for robustness against inductive kickback
dv/dt2 V/ns - Immunity to parasitic turn-on during fast voltage transients in motor drives
tr/tf270 ns / 95 ns @ RG = 4.7 Ω - Fast switching with moderate gate resistance for EMI control
Qg85 nC @ VDD = 24 V, ID = 80 A - Gate drive power requirement informs driver IC selection

Pinout & Package

STB80NF03L-04-1 uses the I2PAK (TO-262) package: 3-pin surface-mount variant with isolated tab, footprint compatible with TO-220 but optimized for automated assembly and thermal performance on PCBs.

Pin/TerminalCircuit RoleDesign Meaning
1 (Source)Main source terminalLow-inductance connection point for return path; electrically tied to exposed tab
2 (Gate)Control inputHigh-impedance MOS gate requiring <±20 V drive; sensitive to ESD
3 (Drain)Main drain terminalConnected internally to exposed metal tab; primary high-side switching node

Key Features

FeatureDesign Value
StripFET™ II processEnables 3.5 mΩ RDS(on) in I2PAK without die size penalty or thermal derating
100% avalanche testedGuarantees EAS ≥ 2.3 J per unit - eliminates screening failure risk in safety-critical loads
Exceptional dv/dt immunity2 V/ns rating prevents false turn-on during fast bus transients in ABS or airbag circuits
Optimized body diodetrr = 75 ns and low Qrr = 0.15 µC reduce switching losses in synchronous rectification

Applications

Automotive Lamp DriverABS Actuator Control

Use Scenario: High-side switching of halogen/LED headlamps and fog lamps in 12 V vehicle electrical architecture.

IC Role / Device Role / Timing Role: Power switch controlling load current up to 80 A with PWM dimming and short-circuit protection.

Use Value: Low RDS(on) minimizes heat generation in confined headlamp housings; avalanche rating handles load dump transients.

Use Scenario: Driving solenoid valves in anti-lock braking system hydraulic modulators.

IC Role / Device Role / Timing Role: Fast-switching high-current driver for inductive valve coils with precise pulse-width control.

Use Value: 270 ns rise time enables sub-millisecond actuation; 2 V/ns dv/dt immunity prevents spurious triggering during ECU noise events.

DC-DC Converter Primary SwitchIndustrial Motor Starter

Use Scenario: Primary-side switch in 12 V–48 V isolated DC-DC converters for telecom or industrial power supplies.

IC Role / Device Role / Timing Role: High-efficiency synchronous rectifier or main switching FET operating at 100–500 kHz.

Use Value: 85 nC total gate charge balances switching speed and driver power consumption; low Coss reduces capacitive losses.

Use Scenario: Soft-start and run control of 3-phase BLDC motors in HVAC blowers and pump controllers.

IC Role / Device Role / Timing Role: Half-bridge high-side switch handling peak currents >60 A during startup surge.

Use Value: 320 A pulsed rating supports locked-rotor current; 175 °C max junction temperature ensures reliability under sustained overload.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP80NF03L-04Same silicon, TO-220 package; RDS(on) identical, but higher Rthj-case (0.55 °C/W vs 0.50 °C/W)Better suited for prototyping or low-volume through-hole assembly; less suitable for high-density SMT layoutsSelect when manual soldering or legacy board compatibility is required
IRF3205PBFHigher RDS(on) (5.5 mΩ), lower EAS (1.1 J), no guaranteed avalanche ratingAcceptable for non-safety-critical motor control but not automotive ABS or airbag systemsChoose only for cost-sensitive industrial applications where avalanche robustness is not mandated

Compared with STP80NF03L-04 and IRF3205PBF, STB80NF03L-04-1 delivers superior thermal resistance and guaranteed avalanche performance in surface-mount form-critical for automotive-grade reliability and high-power density designs where board space and transient immunity are constrained.

Availability

STB80NF03L-04-1 is available at Aetrix Electronics and suitable for automotive lamp drivers, ABS actuator control, and DC-DC converter primary switching requiring stable component supply across production lifecycles.

Supply support for STB80NF03L-04-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to ST's STripFET™ II Power MOSFET product line, engineered specifically for high-current, high-reliability switching in harsh automotive environments including engine control, chassis systems, and lighting.

FAQ

What is the maximum safe operating temperature for STB80NF03L-04-1?

The absolute maximum junction temperature is 175 °C, and the storage temperature range is –60 °C to +175 °C. Thermal design must ensure case temperature remains ≤100 °C under full 80 A load to maintain long-term reliability and avoid SOA violation.

Does STB80NF03L-04-1 require gate resistors for stability?

Yes - a series gate resistor (typically 4.7 Ω) is recommended to dampen ringing and control dV/dt-induced oscillations. The datasheet specifies switching times and gate charge using RG = 4.7 Ω, confirming this value as the reference design point for stable operation.

Can STB80NF03L-04-1 replace STP80NF03L-04 in existing TO-220 designs?

No direct drop-in replacement - STB80NF03L-04-1 uses I2PAK (TO-262) packaging with different footprint, thermal pad layout, and mounting requirements. Board redesign is required to accommodate the surface-mount outline and thermal via pattern specified in ST's P011C mechanical drawing.

Is the body diode suitable for synchronous rectification?

Yes - the integrated body diode has trr = 75 ns and Qrr = 0.15 µC at Tj = 150 °C, making it viable for medium-frequency synchronous rectification in 12 V–24 V DC-DC topologies where external Schottky diodes would otherwise be used.

STB80NF03L-04-1 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
STripFET™ II
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
4mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
110 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
5500 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
300W (Tc)
Operating Temperature:
-60°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
I2PAK

STB80NF03L-04-1 FAQ

1.How can I place an order for STB80NF03L-04-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB80NF03L-04-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB80NF03L-04-1 reliable?

The price and inventory of STB80NF03L-04-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB80NF03L-04-1 is usually 5 days.

3.What payment methods are accepted for STB80NF03L-04-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB80NF03L-04-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB80NF03L-04-1?

STB80NF03L-04-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB80NF03L-04-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB80NF03L-04-1?

For technical support, including STB80NF03L-04-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB80NF03L-04-1 requirements.

6.How does Aetrix verify that STB80NF03L-04-1 is sourced from the original manufacturer or authorized distributors?

All STB80NF03L-04-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB80NF03L-04-1 meets industry standards.

7.What is the process for return or replacement of STB80NF03L-04-1?

All STB80NF03L-04-1 units undergo pre-shipment inspection (PSI). If there is an issue with STB80NF03L-04-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB80NF03L-04-1 part is unused and in its original packaging.

Return procedure for STB80NF03L-04-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STB80NF03L-04-1 Tags

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