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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB80NF55-06-1

Name: STB80NF55-06-1
Brand: STMicroelectronics
SKU: STB80NF55-06-1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB80NF55-06-1

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: STB80NF55-06-1.pdf

Description:: MOSFET N-CH 55V 80A I2PAK

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Product details

Overview

STB80NF55-06-1 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in I²PAK (TO-262) package, rated for 55 V V_DS, <0.0065 Ω R_DS(on) at V_GS = 10 V and 40 A, and 80 A continuous drain current (limited by package). It delivers high-current switching in DC-DC converters, motor drives, and industrial power supplies with rugged avalanche capability and exceptional dv/dt immunity.

For engineers reviewing the STB80NF55-06-1 datasheet, STB80NF55-06-1 pinout, STB80NF55-06-1 application, or STB80NF55-06-1 equivalent, key selection criteria include its 0.5 °C/W R_thJC, 142 nC total gate charge, 100 ns reverse recovery time, and I²PAK thermal performance-critical for high-efficiency, high-reliability power stage design.

Technical Context

This MOSFET employs ST's STripFET™ II process with single-feature-size strip geometry, enabling ultra-low on-resistance and high cell density without compromising ruggedness. Its 100% avalanche-tested construction ensures reliable unclamped inductive switching up to 1.3 J single-pulse energy at T_J = 25 °C.

The device features a fast intrinsic body diode (t_rr = 100 ns, Q_rr = 0.32 µC at I_SD = 80 A, dI/dt = 100 A/µs), optimized for synchronous rectification and freewheeling in hard-switched topologies. Gate threshold voltage is tightly specified at 2–4 V, supporting robust TTL/CMOS drive compatibility.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage in power switch applications; supports 48 V nominal bus systems with margin.
R_DS(on)	<0.0065 Ω @ V_GS = 10 V, I_D = 40 A - Enables ≤2.6 W conduction loss at 80 A, critical for thermal management in compact designs.
I_D (continuous)	80 A @ T_C = 25 °C - Package-limited current rating; defines maximum steady-state load handling with heatsink.
E_AS	1.3 J - Single-pulse avalanche energy; allows safe operation under inductive turn-off stress without external snubbers.
Q_g	142 nC - Total gate charge determines driver strength requirement; impacts switching loss and gate drive power.
t_r/t_f	155 ns / 65 ns @ V_DD = 50 V, I_D = 40 A, R_G = 4.7 Ω - Fast switching enables high-frequency operation (>100 kHz) with low transition losses.
R_thJC	0.5 °C/W - Junction-to-case thermal resistance; enables direct mounting to heatsink for efficient heat extraction.

Pinout & Package

I²PAK (TO-262) package: 3-terminal surface-mount-compatible outline with isolated drain tab, designed for high-power dissipation and mechanical robustness in industrial environments. Features ECOPACK® lead-free second-level interconnect and JEDEC-compliant marking (B80NF55-06-1).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives gate drive signal; requires ≥10 V for full enhancement; low input capacitance (C_iss = 4400 pF) eases driver design.
2 (Drain)	High-side power terminal	Internally connected to metal tab; must be electrically isolated from heatsink unless system ground referenced; handles full load current path.
3 (Source)	Power return/reference node	Serves as common reference for gate drive and current sensing; low-inductance layout essential for stable high-speed switching.

Key Features

Feature	Design Value
STripFET™ II process technology	Enables 0.005 Ω typical R_DS(on) and >95% die utilization-reducing cost per ampere and improving thermal uniformity.
100% avalanche tested	Guarantees minimum 1.3 J E_AS per unit-eliminates need for derating or external protection in inductive load circuits.
Exceptional dv/dt immunity	Rated 7 V/ns - prevents spurious turn-on during high-slew-rate transients in motor drives and SMPS primary switches.
Application-oriented characterization	Includes full SOA curves, diode recovery data (t_rr, Q_rr, I_RRM), and thermal impedance plots-enabling accurate real-world reliability modeling.
ECOPACK® compliance	Lead-free second-level interconnect with JEDEC JESD97 marking-meets RoHS and halogen-free requirements without performance trade-offs.

Applications

DC-DC Converter Primary Switch

Brushed DC Motor Driver High-Side

Use Scenario: 48 V input, 100 kHz synchronous buck converter delivering 60 A to FPGA core rail.

IC Role / Device Role / Timing Role: Main high-side power switch controlling energy transfer into output inductor; operates in hard-switched mode with 155 ns rise time.

Use Value: Low R_DS(on) reduces conduction loss to <1.5 W at full load; 0.5 °C/W R_thJC enables compact heatsink integration.

Use Scenario: 24–48 V industrial actuator with bidirectional H-bridge driving 15 A peak brushed DC motor.

IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration; commutates motor current with controlled turn-off to minimize voltage spikes.

Use Value: 100% avalanche rating absorbs inductive kickback without snubber; fast t_rr (100 ns) minimizes cross-conduction risk during PWM dead-time.

Uninterruptible Power Supply (UPS) Inverter

Industrial Solenoid Driver

Use Scenario: Online UPS with 55 V DC bus converting to 230 V AC via full-bridge inverter at 16 kHz.

IC Role / Device Role / Timing Role: One quadrant of full-bridge power stage; switched with complementary PWM and active clamping.

Use Value: 7 V/ns dv/dt immunity prevents false triggering during bus transients; 320 A pulsed ID capability supports surge loads.

Use Scenario: PLC-controlled 48 V solenoid valve driver requiring 80 A inrush current for 100 ms activation.

IC Role / Device Role / Timing Role: Direct-drive power switch replacing relay; handles repetitive inrush and hold current with minimal voltage drop.

Use Value: <0.0065 Ω R_DS(on) limits voltage drop to <0.52 V at 80 A-ensuring solenoid coil receives >98% of supply voltage.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF55-06	Same silicon die, TO-220 package; R_thJC = 0.5 °C/W but lower max I_D (60 A) due to thermal limitation.	Preferred for through-hole prototyping or lower-cost PCB assembly where heatsink interface differs.	Select when board space permits TO-220 footprint and manual assembly is required; avoid in high-density SMT layouts.
IRF1404ZPBF	55 V, 200 A (T_C = 25 °C), R_DS(on) = 0.004 Ω, but higher Q_g (190 nC); TO-220 package.	Better conduction efficiency but slower switching; less suitable for >100 kHz operation due to gate drive demand.	Choose only if conduction loss dominates over switching loss and gate driver can support 190 nC charge.

Compared with STP80NF55-06 and IRF1404ZPBF, STB80NF55-06-1 offers optimal balance of low R_DS(on), moderate Q_g, and I²PAK thermal performance-making it ideal for high-power-density, surface-mount power stages where both efficiency and layout compactness matter.

Availability

STB80NF55-06-1 is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, uninterruptible power supplies, and industrial solenoid control requiring stable component supply and long-term industrial lifecycle support.

Supply support for STB80NF55-06-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete devices, and MEMS sensors for automotive, industrial, and consumer markets.

This device belongs to ST's STripFET™ Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in industrial motor control, renewable energy inverters, and telecom infrastructure.

FAQ

What is the maximum continuous drain current for STB80NF55-06-1 at 100°C case temperature?

The maximum continuous drain current is 80 A at T_C = 25 °C and derates to 80 A at T_C = 100 °C per Table 1 in the official datasheet-because the limit is package-defined, not junction-temperature-limited. This reflects the I²PAK's robust thermal design, maintaining full rated current across a wide operating range.

Does STB80NF55-06-1 require a gate resistor for stability in hard-switching applications?

Yes-a gate resistor (typically 4.7 Ω, as used in the datasheet's switching time test circuit) is recommended to dampen ringing, control dV/dt, and prevent oscillation. The device's 142 nC Q_g and 4400 pF C_iss make external gate resistance critical for reliable turn-on/turn-off behavior in high-di/dt environments.

Can STB80NF55-06-1 replace STP80NF55-06 in an existing TO-220 design?

No direct drop-in replacement: STB80NF55-06-1 uses I²PAK (TO-262) with different pad layout, thermal pad orientation, and mounting hole pattern. While electrically identical, mechanical redesign-including PCB footprint, heatsink interface, and solder stencil-is required for migration.

Is the body diode suitable for synchronous rectification in a 100 kHz buck converter?

Yes-the body diode has t_rr = 100 ns and Q_rr = 0.32 µC at I_SD = 80 A, enabling use in synchronous rectification up to ~200 kHz with proper dead-time control. However, external Schottky diodes may still be preferred for lowest forward drop in high-efficiency designs.

STB80NF55-06-1 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ II

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 189 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

STB80NF55-06-1 FAQ

1.How can I place an order for STB80NF55-06-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB80NF55-06-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB80NF55-06-1 reliable?

The price and inventory of STB80NF55-06-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB80NF55-06-1 is usually 5 days.

3.What payment methods are accepted for STB80NF55-06-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB80NF55-06-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB80NF55-06-1?

STB80NF55-06-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB80NF55-06-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB80NF55-06-1?

For technical support, including STB80NF55-06-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB80NF55-06-1 requirements.

6.How does Aetrix verify that STB80NF55-06-1 is sourced from the original manufacturer or authorized distributors?

All STB80NF55-06-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB80NF55-06-1 meets industry standards.

7.What is the process for return or replacement of STB80NF55-06-1?

All STB80NF55-06-1 units undergo pre-shipment inspection (PSI). If there is an issue with STB80NF55-06-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB80NF55-06-1 part is unused and in its original packaging.

Return procedure for STB80NF55-06-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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