Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB80NF55-08T4

Name: STB80NF55-08T4
Brand: STMicroelectronics
SKU: STB80NF55-08T4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STB80NF55-08T4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB80NF55-08T4.pdf

Description:: MOSFET N-CH 55V 80A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,457

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STB80NF55-08T4 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in D²PAK (TO-263) package, rated for 55 V drain-source voltage, 80 A continuous drain current at T_C = 25 °C, and 0.0065 Ω typical R_DS(on) at V_GS = 10 V. It delivers high-current switching in DC-DC converters, motor drives, and power supply output stages with rugged avalanche capability (1000 mJ E_AS) and standard-threshold gate drive compatibility.

For engineers reviewing the STB80NF55-08T4 datasheet, STB80NF55-08T4 pinout, STB80NF55-08T4 application, or STB80NF55-08T4 equivalent, key selection criteria include its low on-resistance at 10 V gate drive, 300 W total dissipation at T_C = 25 °C, junction-to-case thermal resistance of 0.5 °C/W, and D²PAK tape-and-reel packaging for automated assembly.

Technical Context

This STripFET™ II device uses a single-feature-size strip-based process to achieve high cell density and low R_DS(on), with gate threshold voltage (2–4 V) enabling direct drive from 3.3 V or 5 V logic controllers. Its SOA curve supports repetitive pulsed operation up to 320 A (I_DM) under defined thermal conditions.

The integrated body diode exhibits 1.5 V forward voltage at 80 A and 80 ns reverse recovery time at T_j = 150 °C, supporting synchronous rectification and inductive load switching. Dynamic parameters include 112 nC total gate charge and 3740 pF input capacitance at V_DS = 25 V, defining driver sizing and switching loss trade-offs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage in high-side or low-side switch configurations without breakdown
R_DS(on) max	0.008 Ω - Ensures ≤0.512 W conduction loss at 80 A, critical for thermal management in compact PCB layouts
I_D continuous	80 A at T_C = 25 °C - Supports high-current power stages without derating when heatsinked to case
E_AS	1000 mJ - Withstands unclamped inductive energy spikes in motor control or relay driving without failure
Q_g	112 nC - Determines minimum gate driver peak current (≥235 mA for 0.48 µs rise time with 4.7 Ω resistor)
R_thj-case	0.5 °C/W - Enables 600 K/W system-level thermal budget allocation when mounted on 1-inch² FR-4 with 2 oz Cu
V_GS(th)	2–4 V - Compatible with standard microcontroller GPIO outputs without level-shifting circuitry

Pinout & Package

D²PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration optimized for high-current PCB copper pour integration.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives 10 V gate drive to fully enhance channel; requires <112 nC charge for full turn-on
2 (Drain)	High-side current path	Connected to exposed metal pad; carries full load current and must be soldered to ≥100 mm² copper area
3 (Source)	Reference node	Return path for load current; establishes local ground reference for gate drive loop integrity

Key Features

Feature	Design Value
STripFET™ II process technology	Enables 0.0065 Ω R_DS(on) in D²PAK while maintaining >175 °C max junction temperature rating
Standard threshold gate drive	V_GS(th) range (2–4 V) allows direct interface with 3.3 V/5 V MCUs without external level shifters
Rugged avalanche capability	1000 mJ single-pulse E_AS eliminates need for external snubbers in inductive switching applications
Low gate charge	112 nC Q_g reduces switching losses and eases gate driver selection for 100 kHz+ SMPS designs
ECOPACK® compliant	Meets RoHS and halogen-free requirements for industrial and consumer end-equipment compliance

Applications

DC-DC Converter Output Stage

Motor Drive Half-Bridge

Use Scenario: High-efficiency 12 V–48 V buck converter delivering up to 80 A to FPGA or ASIC core rails.

IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 200–500 kHz with forced PWM control.

Use Value: 0.0065 Ω R_DS(on) limits conduction loss to <42 W at 80 A, enabling air-cooled design below 60 °C ambient.

Use Scenario: 24 V BLDC motor controller for industrial pumps with 3-phase 10–15 kW output.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter leg, commutated at ≤20 kHz with dead-time control.

Use Value: 320 A pulsed drain current rating supports torque surge peaks without SOA violation during startup.

UPS Inverter Stage

Industrial Power Supply Switch

Use Scenario: Online double-conversion UPS delivering clean 230 VAC output from 380 VDC bus.

IC Role / Device Role / Timing Role: High-frequency switching element in H-bridge inverter stage operating at 16–20 kHz.

Use Value: 1000 mJ E_AS withstands transformer leakage inductance energy during fault conditions.

Use Scenario: 48 V telecom rectifier module with hot-swap and OR-ing functionality.

IC Role / Device Role / Timing Role: Load switch controlling power delivery to downstream boards with soft-start sequencing.

Use Value: Standard V_GS(th) ensures reliable turn-on with 5 V control signal; 0.5 °C/W R_thj-case enables compact heatsink integration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	R_DS(on) = 0.020 Ω @ 10 V; V_DS = 40 V; TO-220 package	Lower voltage rating and higher on-resistance limit use to ≤40 V systems with relaxed thermal constraints	Select when cost sensitivity outweighs efficiency needs and board space permits TO-220 mounting
IXFH80N055T	R_DS(on) = 0.0055 Ω @ 10 V; V_DS = 55 V; TO-247 package; 150 nC Q_g	Lower R_DS(on) improves conduction loss but higher gate charge increases switching loss above 100 kHz	Prefer for high-current linear-regulator replacement or low-frequency (<50 kHz) high-efficiency inverters

Compared with IRF1404PBF and IXFH80N055T, STB80NF55-08T4 offers optimal balance of low R_DS(on), moderate gate charge, and D²PAK surface-mount compatibility-making it ideal for space-constrained, medium-frequency (50–300 kHz), high-current power stages where thermal performance and assembly automation are prioritized.

Availability

STB80NF55-08T4 is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and industrial power supplies requiring stable component supply, long-term lifecycle support, and tape-and-reel delivery for SMT production lines.

Supply support for STB80NF55-08T4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's STripFET™ Power MOSFET product line, engineered specifically for high-current, high-efficiency switching in power conversion and motor control systems where low on-resistance and robust avalanche performance are mandatory.

FAQ

Is STB80NF55-08T4 suitable for 48 V battery-powered motor drives?

Yes. With 55 V V_DS rating and 80 A continuous current capability, it safely handles 48 V nominal battery systems including transient overvoltages up to 55 V. Its 1000 mJ E_AS rating protects against inductive kickback during motor commutation, and D²PAK thermal performance supports sustained operation at full load with appropriate PCB copper area.

What is the maximum safe operating frequency for STB80NF55-08T4 in a hard-switched topology?

Based on its 112 nC gate charge and 3740 pF input capacitance, STB80NF55-08T4 is optimized for switching frequencies up to 300 kHz in well-designed gate-drive circuits. At 200 kHz, typical turn-on/turn-off times (20 ns td(on), 35 ns tf) yield <1% dead-time overhead, but thermal limits require careful attention to conduction vs. switching loss balance above 250 kHz.

Does STB80NF55-08T4 require a gate resistor for stability?

Yes. A 4.7 Ω gate resistor is specified in the datasheet test circuit for switching time measurements and provides optimal damping of gate ringing caused by PCB trace inductance and MOSFET input capacitance. Omitting it risks oscillation, shoot-through in half-bridges, and accelerated gate oxide stress under high di/dt conditions.

Can STB80NF55-08T4 replace STP80NF55-08 in existing TO-220 designs?

No-direct replacement is not mechanically or thermally feasible. STB80NF55-08T4 uses D²PAK surface-mount packaging versus TO-220 through-hole, requiring PCB redesign, requalification of thermal performance, and updated assembly processes. Electrical specs are identical, but thermal resistance differs (0.5 °C/W vs. 1.25 °C/W), impacting heatsink requirements.

STB80NF55-08T4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 155 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3850 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB80NF55-08T4 FAQ

1.How can I place an order for STB80NF55-08T4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB80NF55-08T4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB80NF55-08T4 reliable?

The price and inventory of STB80NF55-08T4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB80NF55-08T4 is usually 5 days.

3.What payment methods are accepted for STB80NF55-08T4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB80NF55-08T4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB80NF55-08T4?

STB80NF55-08T4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB80NF55-08T4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB80NF55-08T4?

For technical support, including STB80NF55-08T4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB80NF55-08T4 requirements.

6.How does Aetrix verify that STB80NF55-08T4 is sourced from the original manufacturer or authorized distributors?

All STB80NF55-08T4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB80NF55-08T4 meets industry standards.

7.What is the process for return or replacement of STB80NF55-08T4?

All STB80NF55-08T4 units undergo pre-shipment inspection (PSI). If there is an issue with STB80NF55-08T4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB80NF55-08T4 part is unused and in its original packaging.

Return procedure for STB80NF55-08T4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…