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STMicroelectronics STB80NF55L-08-1
- Part No.:
- STB80NF55L-08-1
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
STB80NF55L-08-1.pdf
- Description:
- MOSFET N-CH 55V 80A I2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,274
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Product details
Overview
STB80NF55L-08-1 from STMicroelectronics is an N-channel enhancement-mode power MOSFET rated for 55 V VDSS, 80 A continuous drain current at TC = 25°C, and 6.5 mΩ typical RDS(on) at VGS = 10 V. It features logic-level gate drive (VGS(th) typ. 1.6 V), integrated body diode with 1.5 V forward voltage at 80 A, and is packaged in TO-220AB. It is used in high-current DC-DC converters and motor control H-bridge legs.
For engineers reviewing the STB80NF55L-08-1 datasheet, STB80NF55L-08-1 pinout, STB80NF55L-08-1 application, or STB80NF55L-08-1 equivalent, key selection criteria include RDS(on) at 4.5 V gate drive, unclamped inductive switching ruggedness (EAS = 870 mJ), diode reverse recovery performance (trr = 85 ns), and thermal resistance (Rthj-case = 0.5 °C/W).
Technical Context
This MOSFET employs ST's STripFET™ II process with single-feature-size strip geometry, enabling high cell density and low on-resistance while maintaining avalanche robustness. Its gate threshold voltage (1–2.5 V) ensures compatibility with 3.3 V and 5 V logic controllers without level-shifting.
The device supports fast switching with 35 ns turn-on delay and 145 ns rise time under 4.5 V gate drive, and its body diode exhibits controlled reverse recovery (Qrr = 280 nC, IRRM = 6.5 A) suitable for synchronous rectification and freewheeling in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 55 V - Maximum blocking voltage before avalanche conduction begins |
| RDS(on) @ VGS = 10 V | 6.5 mΩ typical - Enables <1 W conduction loss at 40 A in TO-220 package |
| RDS(on) @ VGS = 5 V | 8 mΩ max - Ensures usable on-resistance with standard logic-level drivers |
| ID (continuous) | 80 A at TC = 25°C - Current limited by package thermal capability, not silicon |
| EAS | 870 mJ - Single-pulse avalanche energy rating confirms ruggedness under inductive fault conditions |
| tr | 145 ns - Rise time measured with 4.7 Ω gate resistor, defines minimum practical switching frequency |
| Rthj-case | 0.5 °C/W - Junction-to-case thermal resistance enables 300 W dissipation at 25°C case temperature |
Pinout & Package
STB80NF55L-08-1 is supplied in TO-220AB package (3-lead, straight lead form). The case is electrically connected to the drain terminal. Thermal pad must be soldered to PCB copper for rated power dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Source terminal | Reference node for gate drive; connects to power ground or low-side switch return path |
| 2 (Gate) | Control input | High-impedance MOS gate requiring <100 nA leakage; driven by logic-level PWM signal |
| 3 (Drain) | Power output / high-side connection | Internally bonded to metal tab; electrically tied to heatsink and PCB thermal pad |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) max 2.5 V enables direct interface with 3.3 V microcontrollers and gate drivers |
| Low RDS(on) at 5 V | 8 mΩ max at VGS = 5 V reduces conduction loss in 5 V control systems |
| Robust avalanche rating | 870 mJ EAS allows safe operation during inductive load turn-off transients without external snubbers |
| Fast body diode | 85 ns trr and 280 nC Qrr minimize switching losses when used as freewheeling diode |
Applications
| Motor Drive Half-Bridge | DC-DC Synchronous Rectifier |
|---|---|
Use Scenario: High-current brushed DC motor control in industrial actuators with bidirectional PWM at 20 kHz. IC Role / Device Role / Timing Role: Low-side switch in H-bridge topology; handles 80 A peak current with minimal conduction loss. Use Value: 6.5 mΩ RDS(on) limits I²R loss to 0.52 W at 40 A, reducing heatsink requirements vs. higher-RDS(on) alternatives. | Use Scenario: Secondary-side synchronous rectification in 48 V → 12 V isolated DC-DC converter operating at 300 kHz. IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode; body diode conducts during dead-time, channel conducts during active phase. Use Value: 85 ns reverse recovery time prevents cross-conduction losses and enables stable zero-voltage switching behavior. |
| UPS Inverter Output Stage | High-Power LED Driver |
Use Scenario: 1 kW offline UPS inverter stage converting 380 V DC bus to 230 V AC using full-bridge topology. IC Role / Device Role / Timing Role: High-side and low-side switch in leg; operates with 10 µs dead-time and 50 kHz PWM. Use Value: 870 mJ avalanche energy rating absorbs inductive kickback during short-circuit events without failure. | Use Scenario: Constant-current driver for 100 W high-brightness LED arrays in street lighting fixtures. IC Role / Device Role / Timing Role: Primary switching element in buck converter regulating 3 A output at 36 V. Use Value: 0.5 °C/W Rthj-case allows full 80 A rating with modest heatsinking, supporting >95% efficiency at full load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404PBF | RDS(on) = 4.7 mΩ @ 10 V but VGS(th) = 2–4 V; no specified EAS rating | Higher gate threshold requires stronger drive; less rugged in unclamped inductive switching | Prefer where lower RDS(on) outweighs avalanche margin and logic-level compatibility |
| IXTH80N55L2 | RDS(on) = 7.5 mΩ @ 10 V; VGS(th) = 1.5–2.5 V; EAS = 1.2 J | Higher avalanche rating but larger TO-247 package; slower tr (200 ns) | Prefer where enhanced ruggedness justifies larger footprint and reduced switching speed |
Compared with IRF1404PBF and IXTH80N55L2, STB80NF55L-08-1 offers optimal balance of logic-level drive, 6.5 mΩ on-resistance, and 870 mJ avalanche energy in the compact TO-220AB package-making it ideal for space-constrained, high-reliability 55 V power stages.
Availability
STB80NF55L-08-1 is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, and high-power LED drivers requiring stable component supply and long-term industrial availability.
Supply support for STB80NF55L-08-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, digital, and mixed-signal ICs, discrete devices, and MEMS sensors for automotive, industrial, and consumer markets.
This part belongs to ST's STripFET™ II power MOSFET product line, engineered for high-efficiency, high-current switching in 40–100 V applications where low gate charge and avalanche ruggedness are critical.
FAQ
What is the maximum safe operating junction temperature for STB80NF55L-08-1?
The absolute maximum operating junction temperature is 175°C, as specified in the Absolute Maximum Ratings table. Continuous operation above this temperature risks irreversible degradation of the silicon die and bond wires. Derating is required above 25°C case temperature at 2 W/°C, and thermal design must ensure Tj remains ≤175°C under worst-case load and ambient conditions.
Can STB80NF55L-08-1 be used in parallel configurations?
Yes, it supports paralleling due to its positive temperature coefficient of RDS(on), which promotes current sharing as temperature rises. However, matched gate drive layout, identical source inductance, and symmetrical thermal mounting are mandatory. Gate resistors ≥4.7 Ω per device are recommended to damp oscillation and ensure simultaneous turn-on.
Does STB80NF55L-08-1 have a built-in ESD protection diode on the gate?
No, the device does not integrate gate ESD protection. The gate oxide is sensitive to electrostatic discharge, with ±16 V maximum gate-source voltage rating. External gate protection-such as a 12 V Zener clamp between gate and source-is strongly recommended in production handling and PCB layout to prevent damage during assembly or system operation.
Is the TO-220AB package of STB80NF55L-08-1 lead-free and RoHS compliant?
Yes, STB80NF55L-08-1 is manufactured in accordance with EU RoHS Directive 2011/65/EU and is lead-free. The device uses matte tin plating on leads and complies with JEDEC J-STD-020 moisture sensitivity level (MSL) 1, allowing unlimited floor life at ≤30°C/60% RH without baking prior to reflow soldering.
STB80NF55L-08-1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- STripFET™ II
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 100 nC @ 4.5 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4350 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- I2PAK
STB80NF55L-08-1 FAQ
1.How can I place an order for STB80NF55L-08-1 through Aetrix?
Please submit a Request for Quotation (RFQ) for STB80NF55L-08-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB80NF55L-08-1 reliable?
The price and inventory of STB80NF55L-08-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB80NF55L-08-1 is usually 5 days.
3.What payment methods are accepted for STB80NF55L-08-1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB80NF55L-08-1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB80NF55L-08-1?
STB80NF55L-08-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB80NF55L-08-1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB80NF55L-08-1?
For technical support, including STB80NF55L-08-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB80NF55L-08-1 requirements.
6.How does Aetrix verify that STB80NF55L-08-1 is sourced from the original manufacturer or authorized distributors?
All STB80NF55L-08-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB80NF55L-08-1 meets industry standards.
7.What is the process for return or replacement of STB80NF55L-08-1?
All STB80NF55L-08-1 units undergo pre-shipment inspection (PSI). If there is an issue with STB80NF55L-08-1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB80NF55L-08-1 part is unused and in its original packaging.
Return procedure for STB80NF55L-08-1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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