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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB85NF55LT4

Name: STB85NF55LT4
Brand: STMicroelectronics
SKU: STB85NF55LT4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB85NF55LT4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB85NF55LT4.pdf

Description:: MOSFET N-CH 55V 80A D2PAK

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Product details

Overview

STB85NF55LT4 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in D²PAK (TO-263) package, rated for 55 V V_DS, 0.0060 Ω R_DS(on) at V_GS = 10 V, and 80 A continuous drain current at T_C = 25 °C. It features rugged avalanche capability (E_AS = 980 mJ), low gate charge (Q_g = 80 nC), and is optimized for high-efficiency DC-DC converters and motor control H-bridge switches.

For engineers reviewing the STB85NF55LT4 datasheet, STB85NF55LT4 pinout, STB85NF55LT4 application, or STB85NF55LT4 equivalent, key selection criteria include its 55 V breakdown voltage, sub-8 mΩ on-resistance at 10 V drive, thermal resistance (R_thj-case = 0.5 °C/W), diode recovery performance (t_rr = 80 ns), and D²PAK tape-and-reel packaging for automated assembly.

Technical Context

This MOSFET employs ST's STripFET™ II strip-based process to achieve high cell density and low R_DS(on) while maintaining robust safe operating area (SOA) and unclamped inductive switching capability. Its gate threshold voltage (V_GS(th) = 1.0–2.5 V) supports logic-level drive compatibility with 5 V microcontrollers.

The device integrates a fast, low-loss body diode (V_SD = 1.5 V at I_SD = 80 A, t_rr = 80 ns, Q_rr = 240 nC) and exhibits stable on-resistance over temperature (±30% variation from −55 °C to 175 °C), enabling reliable operation in automotive and industrial power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage for 12–48 V bus applications
R_DS(on) max	0.008 Ω at V_GS = 10 V - Enables <1 W conduction loss at 40 A
I_D cont.	80 A at T_C = 25 °C - Supports high-current motor phases or power supply outputs
E_AS	980 mJ - Withstands repetitive inductive turn-off energy without failure
Q_g	80 nC - Reduces gate driver power requirement and switching loss
t_rr	80 ns - Limits reverse recovery losses in synchronous rectification
R_thj-case	0.5 °C/W - Allows 300 W dissipation with modest heatsinking

Pinout & Package

Package: D²PAK (TO-263), surface-mount, thermally enhanced with exposed drain pad. Tape-and-reel packaging (1000 pcs/reel) per ECOPACK® environmental compliance.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≤±15 V drive; 80 nC total charge
2 (D)	Drain	Main power output; electrically connected to exposed back-side metal pad
3 (S)	Source	Power return and reference node for gate drive; tied to PCB ground plane

Key Features

Feature	Design Value
Low R_DS(on) with logic-level gate drive	0.0060 Ω @ V_GS = 10 V enables direct MCU interface without level-shifting
Rugged avalanche rating	980 mJ single-pulse E_AS ensures reliability in inductive load switching
Fast body diode recovery	80 ns t_rr and 240 nC Q_rr reduce cross-conduction loss in synchronous buck stages
Thermally optimized package	0.5 °C/W R_thj-case allows high-power operation with minimal heatsink footprint

Applications

Motor Drive Half-Bridge

DC-DC Synchronous Buck Converter

Use Scenario: High-current H-bridge for 24–48 V BLDC motor control in industrial actuators.

IC Role / Device Role / Timing Role: Low-side switch handling 80 A continuous phase current with fast PWM switching.

Use Value: Sub-8 mΩ R_DS(on) minimizes I²R heating; 980 mJ E_AS withstands flyback energy during commutation.

Use Scenario: 50 A output stage in telecom or server POL converter operating at 300–500 kHz.

IC Role / Device Role / Timing Role: Synchronous rectifier with low V_SD and fast t_rr to replace Schottky diode.

Use Value: 1.5 V forward drop and 80 ns recovery cut conduction + recovery losses by >35% vs. discrete diode solution.

Automotive Body Control Module

Industrial Solid-State Relay

Use Scenario: Load switching for headlights, fans, or solenoids in 12 V vehicle systems.

IC Role / Device Role / Timing Role: High-side or low-side power switch with integrated protection against load dump and inductive kick.

Use Value: 55 V rating covers ISO 7637-2 pulse 5a (200 V transient); 175 °C T_Jmax meets under-hood thermal requirements.

Use Scenario: Replacement for electromechanical relays in PLC output modules and HVAC controllers.

IC Role / Device Role / Timing Role: Solid-state power switch driving resistive or inductive loads up to 80 A.

Use Value: No contact wear or bounce; 320 A pulsed current rating handles motor startup surges reliably.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PbF	Higher R_DS(on) (4 mΩ min vs. 6 mΩ typ), TO-220 package, no tape-and-reel option	Limited to through-hole assembly; higher thermal resistance (R_thj-case = 0.75 °C/W)	Prefer when legacy board layout prohibits D²PAK rework and lower cost outweighs thermal penalty.
STL85N55M5	Same 55 V/80 A rating but STripFET™ V process; lower Q_g (65 nC), smaller PowerFLAT™ 5x6 package	Requires different PCB footprint and thermal pad layout; not pin-compatible	Select for space-constrained designs needing improved switching efficiency and reduced gate drive loss.

Compared with IRF1404PbF and STL85N55M5, the STB85NF55LT4 offers optimal balance of low R_DS(on), proven ruggedness, D²PAK manufacturability, and documented 980 mJ avalanche energy-making it preferred for high-reliability industrial motor drives where thermal margin and surge immunity are critical.

Availability

STB85NF55LT4 is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, and solid-state relay applications requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for STB85NF55LT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and consumer markets.

The STripFET™ series targets high-efficiency power switching applications, emphasizing low conduction loss, fast switching, and ruggedness in demanding environments such as motor drives and power supplies.

FAQ

What is the maximum safe operating temperature for STB85NF55LT4?

The STB85NF55LT4 has a maximum junction temperature (T_J) of 175 °C and a storage temperature range of −55 to 175 °C. Its thermal resistance junction-to-case is 0.5 °C/W, so sustained 300 W dissipation requires case temperature ≤25 °C. Derating begins above 25 °C at 2.0 W/°C, limiting usable power at elevated ambient temperatures.

Does STB85NF55LT4 require a gate resistor for stability?

Yes-a gate resistor (typically 4.7 Ω, as used in the datasheet switching test circuit) is recommended to dampen ringing caused by gate-drain capacitance (C_rss = 300 pF) and PCB inductance. Without it, overshoot exceeding ±15 V V_GS rating may occur, risking gate oxide damage during fast switching at 80 A.

Can STB85NF55LT4 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (increasing with junction temperature) enables inherent current sharing. However, matched layout (symmetrical gate and source routing), individual gate resistors, and thermal coupling via shared heatsink are required to ensure balanced conduction and avoid thermal runaway under high-current conditions.

Is the body diode suitable for synchronous rectification?

Yes-the body diode has characterized reverse recovery parameters: t_rr = 80 ns, Q_rr = 240 nC, and I_RRM = 6 A at T_J = 150 °C. These values support use in synchronous buck topologies up to ~500 kHz, provided gate timing avoids shoot-through and layout minimizes loop inductance to suppress voltage spikes during recovery.

STB85NF55LT4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ II

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 5 V

Vgs (Max):: ±15V

Input Capacitance (Ciss) (Max) @ Vds:: 4050 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB85NF55LT4 FAQ

1.How can I place an order for STB85NF55LT4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB85NF55LT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB85NF55LT4 reliable?

The price and inventory of STB85NF55LT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB85NF55LT4 is usually 5 days.

3.What payment methods are accepted for STB85NF55LT4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB85NF55LT4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB85NF55LT4?

STB85NF55LT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB85NF55LT4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB85NF55LT4?

For technical support, including STB85NF55LT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB85NF55LT4 requirements.

6.How does Aetrix verify that STB85NF55LT4 is sourced from the original manufacturer or authorized distributors?

All STB85NF55LT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB85NF55LT4 meets industry standards.

7.What is the process for return or replacement of STB85NF55LT4?

All STB85NF55LT4 units undergo pre-shipment inspection (PSI). If there is an issue with STB85NF55LT4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB85NF55LT4 part is unused and in its original packaging.

Return procedure for STB85NF55LT4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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