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STMicroelectronics STB85NS04Z
- Part No.:
- STB85NS04Z
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB85NS04Z.pdf
- Description:
- MOSFET N-CH 33V 80A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,204
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Product details
Overview
STB85NS04Z from STMicroelectronics is an N-channel clamped Power MOSFET in D²PAK package, rated for 33 V drain-source voltage, 11 mΩ typical RDS(on) at VGS = 10 V and 30 A, 80 A continuous drain current at TC = 25°C, and 175°C maximum junction temperature - designed for high-ruggedness automotive switching applications including motor control and power distribution.
For engineers reviewing the STB85NS04Z datasheet, STB85NS04Z pinout, STB85NS04Z application, or STB85NS04Z equivalent, this device's fully clamped avalanche capability, low gate charge (68 nC), 100% avalanche tested construction, and ESD-robust gate (2 kV HBM) are critical selection criteria in harsh-environment power switching designs.
Technical Context
This MOSFET employs ST's Mesh Overlay™ strip layout process to achieve low RDS(on) and enhanced ruggedness. Its integrated zener clamping enables safe operation under unclamped inductive switching, with 550 mJ single-pulse avalanche energy at 30 V and 60 A IAS.
The device features low dynamic parameters: Ciss = 2500 pF, Coss = 800 pF, and fast switching times (tr(Voff) = 85 ns, tf = 145 ns) with 4.7 Ω external gate resistance - optimized for high-efficiency, high-frequency DC-DC and motor drive topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 33 V - Maximum drain-source blocking voltage limited by internal zener clamping |
| RDS(on) | 11 mΩ (typ) @ VGS = 10 V, ID = 30 A - Enables <1 W conduction loss at 30 A |
| ID (cont) | 80 A @ TC = 25°C - Current rating constrained by wire bonding, not silicon |
| Qg | 68 nC (typ) - Low gate charge supports efficient 100+ kHz PWM switching with moderate gate drivers |
| Tj(max) | 175°C - Enables operation in under-hood automotive environments without derating |
| EAS | 550 mJ - Confirmed single-pulse avalanche energy ensures reliability during load dump or inductive turn-off |
| Rth(j-case) | 0.7 °C/W - High thermal conductivity allows >200 W dissipation with minimal heatsink |
Pinout & Package
Package: D²PAK (TO-263), surface-mount, 3-pin, lead-free ECOPACK® compliant, with exposed drain pad for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control input | Receives 10 V logic-level signal; RG = 14 Ω internal series resistance limits dV/dt-induced ringing |
| 2 (Drain) | High-side power output | Internally connected to exposed copper pad; carries full load current and dissipates heat directly to PCB/heatsink |
| 3 (Source) | Power return / reference node | Provides low-inductance return path; used as local ground reference for gate drive and current sensing |
Key Features
| Feature | Design Value |
|---|---|
| Fully clamped avalanche structure | Zener-diode protected drain enables reliable unclamped inductive switching without external snubbers |
| 100% avalanche tested | Every unit validated for 60 A IAS and 550 mJ EAS, ensuring production-line robustness |
| Low Qg/Qgd ratio | Qgd/Qg = 19/68 ≈ 0.28 - Reduces Miller effect, improves hard-switching immunity |
| High ESD tolerance | VESD(G-S) = 2 kV (HBM); VESD(D-S) = 4 kV - Supports automated assembly and field-replaceable modules |
| Mesh Overlay™ process | Strip-based cell layout delivers 11 mΩ RDS(on) in D²PAK while maintaining SOA integrity |
Applications
| Automotive Motor Control | DC-DC Converter Primary Switch |
|---|---|
Use Scenario: High-current window lift or seat actuator driver in passenger vehicles. IC Role / Device Role / Timing Role: Main power switch controlling brushed DC motor direction and speed via PWM. Use Value: Clamped avalanche capability withstands back-EMF spikes up to 33 V without failure; 175°C rating supports placement near engine bay heat sources. |
Use Scenario: 48 V–12 V buck converter in start-stop systems. IC Role / Device Role / Timing Role: Synchronous rectifier or primary-side high-side switch operating at 150 kHz. Use Value: Low 11 mΩ RDS(on) and 68 nC Qg enable >95% efficiency at 60 A; 0.7 °C/W Rth(j-case) simplifies thermal design on 2 oz Cu PCB. |
| Industrial Power Distribution | Off-Board Battery Protection |
Use Scenario: Solid-state relay replacement in programmable logic controller (PLC) output modules. IC Role / Device Role / Timing Role: Load switch isolating 24 V DC field power from control logic. Use Value: 80 A continuous rating supports high-inrush solenoid loads; 100% avalanche test ensures long-term reliability under short-circuit fault conditions. |
Use Scenario: Smart battery disconnect in 12 V AGM/LiFePO4 backup systems. IC Role / Device Role / Timing Role: Bidirectional current-blocking switch protecting against reverse polarity and overcurrent. Use Value: Source-drain diode VSD = 1.5 V @ 60 A enables low-loss freewheeling; 320 A pulsed IDM handles cranking surge events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STB85NF55-1 | 55 V VDSS, 14 mΩ RDS(on), same D²PAK package, non-clamped | Lacks integrated avalanche clamping; requires external protection in inductive loads | Select when higher voltage margin is needed and system-level clamping is already implemented |
| IRFB4115PBF | 150 V VDSS, 12 mΩ RDS(on), TO-220AB package, no clamping, higher Qg (130 nC) | Higher voltage rating but larger footprint and slower switching due to higher gate charge | Prefer for industrial 120 V AC-fed supplies where voltage headroom outweighs thermal density needs |
Compared with STB85NS04Z, STB85NF55-1 trades clamping for higher voltage rating and slightly higher on-resistance, while IRFB4115PBF offers greater VDSS at the cost of thermal performance and switching speed - making STB85NS04Z optimal for compact, high-ruggedness 33 V automotive switches.
Availability
STB85NS04Z is available at Aetrix Electronics and suitable for automotive motor control, DC-DC converter primary switching, and industrial power distribution requiring stable component supply across extended temperature and lifecycle requirements.
Supply support for STB85NS04Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.
This device belongs to ST's SAFeFET™ Power MOSFET product line, engineered specifically for automotive-grade ruggedness - emphasizing clamped avalanche reliability, high-temperature operation, and AEC-Q101 alignment in surface-mount power packages.
FAQ
Is STB85NS04Z qualified to AEC-Q101?
No official AEC-Q101 qualification is stated in the datasheet. While it is explicitly designed for automotive environments - featuring 100% avalanche testing, 175°C Tj(max), and clamped operation - formal AEC-Q101 stress test reporting is not included. Customers requiring certified qualification should consult ST's latest automotive product roadmap or request test reports directly.
What is the maximum recommended gate drive voltage?
The absolute maximum VGS is ±18 V per datasheet Table 1. ST recommends limiting gate drive to +10 V to ensure optimal RDS(on) and avoid unnecessary gate oxide stress. Driving above +12 V yields diminishing RDS(on) improvement while increasing risk of gate leakage and long-term reliability degradation.
Can STB85NS04Z be used in parallel configurations?
Yes - its positive temperature coefficient of RDS(on) (confirmed in Figure 10) enables inherent current sharing. However, layout symmetry, matched gate drive impedance, and individual source inductance control are essential. Derate total current by ≥20% versus sum of individual ratings to account for thermal coupling and parameter spread.
Does the "clamped" designation mean it replaces external TVS diodes?
It provides intrinsic clamping up to 33 V during avalanche events, eliminating need for external TVS in many inductive turn-off scenarios. However, it does not replace TVS for fast transient suppression (e.g., ISO 7637-2 pulse 5a). System-level surge testing remains required to validate full protection coverage.
STB85NS04Z Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- SAFeFET™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 33 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 15mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 100 nC @ 10 V
- Vgs (Max):
- ±18V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2500 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 215W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
STB85NS04Z FAQ
1.How can I place an order for STB85NS04Z through Aetrix?
Please submit a Request for Quotation (RFQ) for STB85NS04Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB85NS04Z reliable?
The price and inventory of STB85NS04Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB85NS04Z is usually 5 days.
3.What payment methods are accepted for STB85NS04Z?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB85NS04Z transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB85NS04Z?
STB85NS04Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB85NS04Z order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB85NS04Z?
For technical support, including STB85NS04Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB85NS04Z requirements.
6.How does Aetrix verify that STB85NS04Z is sourced from the original manufacturer or authorized distributors?
All STB85NS04Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB85NS04Z meets industry standards.
7.What is the process for return or replacement of STB85NS04Z?
All STB85NS04Z units undergo pre-shipment inspection (PSI). If there is an issue with STB85NS04Z, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB85NS04Z part is unused and in its original packaging.
Return procedure for STB85NS04Z:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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