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STMicroelectronics STB8NM60T4
- Part No.:
- STB8NM60T4
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB8NM60T4.pdf
- Description:
- MOSFET N-CH 650V 8A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,988
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Product details
Overview
STB8NM60T4 from STMicroelectronics is an N-channel 600 V, 0.9 Ω typ., 5 A MDmesh™ Power MOSFET in DPAK (TO-252) package, featuring 100% avalanche tested operation, low gate charge (13 nC), and high dv/dt capability (15 V/ns). It serves as a high-voltage switching device in offline SMPS, PFC stages, and industrial motor drives.
For engineers reviewing the STB8NM60T4 datasheet, STB8NM60T4 pinout, STB8NM60T4 application, or STB8NM60T4 equivalent, key selection criteria include RDS(on) at 10 V gate drive, unclamped inductive switching robustness (EAS = 200 mJ), diode reverse recovery performance (Qrr = 1.95 µC), and thermal resistance (RthJC = 1.3 °C/W).
Technical Context
This device employs ST's MDmesh™ multi-drain process combined with PowerMESH™ horizontal layout to achieve ultra-low on-resistance and superior dynamic performance. Its strip-based cell structure enables reduced input capacitance (Ciss = 400 pF) and optimized gate charge distribution.
The integrated body diode exhibits fast, soft recovery (trr = 300 ns, IRRM = 13 A) and is rated for 5 A continuous source-drain current. The MOSFET operates within a junction temperature range of –55 °C to 150 °C and supports gate drive voltages up to ±30 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - Withstands full mains-referenced DC bus voltage in 400 V AC input systems without derating. |
| RDS(on) max | 1.0 Ω @ VGS = 10 V, ID = 2.5 A - Ensures <1.25 W conduction loss at 5 A, enabling compact heatsink design. |
| Qg | 13 nC - Enables efficient 100 kHz+ switching with moderate gate driver strength (e.g., TC4427). |
| EAS | 200 mJ - Supports reliable unclamped inductive switching in flyback and resonant converters without snubbers. |
| trr | 300 ns @ TJ = 25 °C - Minimizes commutation losses and EMI in hard-switched topologies. |
| RthJC | 1.3 °C/W - Allows >70 W power dissipation with modest heatsinking (e.g., 10 cm² copper area). |
| ID cont | 5 A @ TC = 25 °C - Sustains full load in 100–200 W offline converters with proper PCB thermal relief. |
Pinout & Package
DPAK (TO-252) package with exposed drain tab for enhanced thermal and electrical performance. Standard 3-pin surface-mount outline with gull-wing leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires 10 V nominal drive for full enhancement; ±30 V absolute max rating. |
| 2 (D / TAB) | Drain / Exposed Pad | Main high-side current path; electrically connected to metal tab - must be isolated from heatsink unless referenced to drain potential. |
| 3 (S) | Source | Reference node for gate drive and current sensing; connects to power ground or low-side switch node. |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh™ technology | Enables 600 V breakdown with 0.9 Ω typ. RDS(on), reducing conduction loss by ~35% vs. conventional planar MOSFETs. |
| 100% avalanche tested | Guarantees single-pulse avalanche ruggedness (IAS = 2.5 A) across production lot - eliminates need for external clamping in many designs. |
| Low Ciss/Coss ratio | Ciss = 400 pF, Coss = 100 pF - Improves switching efficiency and reduces Miller-induced shoot-through risk. |
| Soft-recovery body diode | Qrr = 1.95 µC, trr = 300 ns - Lowers diode switching loss and EMI generation during ZVS/ZCS transitions. |
| ECOPACK® compliant | Meets RoHS and halogen-free requirements per ST's environmental grade definitions - suitable for global industrial shipments. |
Applications
| AC-DC Power Supply | Industrial Motor Control |
|---|---|
|
Use Scenario: Primary-side switch in 100–250 W universal-input flyback converter. IC Role / Device Role / Timing Role: High-voltage switching element handling 400 V DC bus; switched at 65–130 kHz. Use Value: Low Qg and soft diode reduce gate drive loss and EMI filtering burden; 200 mJ EAS tolerates transformer leakage energy without snubber. |
Use Scenario: Half-bridge leg in 3-phase inverter driving 0.5–2 kW BLDC motor. IC Role / Device Role / Timing Role: Low-side switching device in IGBT/MOSFET hybrid topology; operated with 5–10 µs dead time. Use Value: Fast trr and low Qrr minimize cross-conduction loss; RthJC = 1.3 °C/W supports direct PCB copper cooling. |
| LED Driver | Telecom DC-DC Converter |
|
Use Scenario: Buck-mode constant-current driver for high-bay LED fixtures (30–100 W). IC Role / Device Role / Timing Role: Main power switch regulating output current via PWM dimming at 1–10 kHz. Use Value: 600 V rating accommodates 480 V AC line surges; low RDS(on) maintains >92% efficiency at full load. |
Use Scenario: Primary switch in telecom-grade 48 V input forward converter powering base station subsystems. IC Role / Device Role / Timing Role: High-reliability switching transistor operating continuously at 100 °C case temperature. Use Value: Rated 3.1 A continuous at TC = 100 °C ensures stable operation under forced-air cooling; 150 °C max TJ supports extended lifetime. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP8NM60FP | Same die, but in TO-220FP (full-pack) package; higher RthJA (60 °C/W), no exposed drain tab. | Suitable for through-hole prototyping or lower-power (<60 W) designs where PCB space permits larger footprint. | Select when mechanical mounting stability or manual soldering is prioritized over thermal performance. |
| FDPF18N50 | 500 V rating, 0.33 Ω RDS(on), 18 A ID; different cell technology (SuperFET), higher Coss (220 pF). | Better for 230 V AC-only systems requiring higher current density; not rated for 400 V DC bus margin. | Choose only if system DC bus stays ≤400 V and higher peak current is needed; verify dv/dt immunity (not specified). |
Compared with STP8NM60FP and FDPF18N50, STB8NM60T4 delivers optimal balance of 600 V safety margin, DPAK thermal efficiency, and soft-recovery diode performance - making it preferred for space-constrained, high-reliability 100–200 W industrial SMPS.
Availability
STB8NM60T4 is available at Aetrix Electronics and suitable for AC-DC power supplies, industrial motor control inverters, LED drivers, and telecom DC-DC converters requiring stable component supply and long-term lifecycle support.
Supply support for STB8NM60T4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.
This device belongs to ST's MDmesh™ high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in offline power conversion and industrial motor control applications.
FAQ
What is the maximum safe operating junction temperature for STB8NM60T4?
The STB8NM60T4 has a specified operating junction temperature range of –55 °C to 150 °C. Continuous operation at 150 °C is permitted only when case temperature (TC) is maintained ≤100 °C per derated ID = 3.1 A, and thermal design ensures RthJC ≤1.3 °C/W is achieved via adequate copper area and optional heatsinking.
Does STB8NM60T4 have an integrated body diode, and what are its key recovery parameters?
Yes, STB8NM60T4 includes an integrated source-drain body diode rated for 5 A continuous and 20 A pulsed current. Its key recovery specs are: reverse recovery time trr = 300 ns (TJ = 25 °C), reverse recovery charge Qrr = 1.95 µC, and peak reverse recovery current IRRM = 13 A - all measured at ISD = 5 A, di/dt = 100 A/μs, and VDD = 100 V.
Can STB8NM60T4 replace STD5NM60T4 in existing designs?
Yes - STB8NM60T4 is a direct functional and pin-compatible replacement for STD5NM60T4, sharing identical DPAK package, pinout, electrical ratings (VDS, ID, RDS(on)), and MDmesh™ die architecture. Both are listed in the same DS1949 Rev 18 datasheet and exhibit identical avalanche, switching, and thermal characteristics.
What gate drive voltage is required to fully enhance STB8NM60T4?
A minimum gate-source voltage of 10 V is required to achieve the specified RDS(on) of 0.9 Ω typ. Gate threshold voltage VGS(th) ranges from 3 V to 5 V (min/typ/max), but reliable saturation and low conduction loss demand ≥10 V drive. Absolute maximum VGS is ±30 V; exceeding this risks permanent gate oxide damage.
STB8NM60T4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1Ohm @ 2.5A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 400 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 100W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
STB8NM60T4 FAQ
1.How can I place an order for STB8NM60T4 through Aetrix?
Please submit a Request for Quotation (RFQ) for STB8NM60T4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB8NM60T4 reliable?
The price and inventory of STB8NM60T4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB8NM60T4 is usually 5 days.
3.What payment methods are accepted for STB8NM60T4?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB8NM60T4 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB8NM60T4?
STB8NM60T4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB8NM60T4 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB8NM60T4?
For technical support, including STB8NM60T4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB8NM60T4 requirements.
6.How does Aetrix verify that STB8NM60T4 is sourced from the original manufacturer or authorized distributors?
All STB8NM60T4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB8NM60T4 meets industry standards.
7.What is the process for return or replacement of STB8NM60T4?
All STB8NM60T4 units undergo pre-shipment inspection (PSI). If there is an issue with STB8NM60T4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB8NM60T4 part is unused and in its original packaging.
Return procedure for STB8NM60T4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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