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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB95N3LLH6

Name: STB95N3LLH6
Brand: STMicroelectronics
SKU: STB95N3LLH6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB95N3LLH6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB95N3LLH6.pdf

Description:: MOSFET N-CH 30V 80A D2PAK

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Product details

Overview

STB95N3LLH6 from STMicroelectronics is an N-channel 30 V, 80 A Power MOSFET in D²PAK (TO-263) package, featuring 4.2 mΩ R_DS(on) at V_GS = 10 V and 40 A, ultra-low gate charge (20 nC total), high avalanche ruggedness (150 mJ E_AS), and optimized for high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the STB95N3LLH6 datasheet, STB95N3LLH6 pinout, STB95N3LLH6 application, or STB95N3LLH6 equivalent, key selection criteria include R_DS(on)/Q_g trade-off at 4.5 V drive, thermal resistance (R_thj-case = 2.14 °C/W), safe operating area under pulsed ID_M = 320 A, and D²PAK mounting compatibility with FR-4 PCBs.

Technical Context

This STripFET™ VI DeepGATE™ device uses a proprietary 6th-generation trench-gate structure to minimize conduction and switching losses simultaneously. Its low 0.0042 Ω R_DS(on) and 20 nC Q_g enable high-frequency operation up to 500 kHz in synchronous buck converters while maintaining <1.1 V body diode forward voltage at 40 A.

The MOSFET supports robust unclamped inductive switching with 150 mJ single-pulse avalanche energy (T_j = 25 °C, I_AV = 55 A, L = 0.1 mH) and exhibits stable threshold voltage (V_GS(th) = 1–2.5 V) and on-resistance over -55 to 175 °C junction temperature range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 24 V system-level designs with margin
R_DS(on) max	4.2 mΩ @ V_GS = 10 V, I_D = 40 A - Enables ≤2 W conduction loss at 80 A continuous current
I_D cont	80 A @ T_C = 25 °C - Supports high-current power stages without parallel devices
Q_g total	20 nC @ V_DD = 15 V, I_D = 80 A - Reduces gate driver power loss and enables fast 91 ns t_r/23.4 ns t_f
E_AS	150 mJ - Withstands repetitive inductive turn-off stress in motor control and SMPS without derating
R_thj-case	2.14 °C/W - Allows ≥33 W power dissipation at ΔT = 70 °C with standard heatsink interface
V_SD	1.1 V @ I_SD = 40 A - Low body diode drop improves efficiency in synchronous rectification and freewheeling

Pinout & Package

D²PAK (TO-263) surface-mount package with exposed drain tab for thermal and electrical connection; 3-pin configuration optimized for high-current PCB layout and automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal requiring ≤±20 V bias; low input capacitance (C_iss = 2200 pF) minimizes driver loading
2 (D / TAB)	Drain (exposed metal tab)	Main high-side current path and primary thermal conduction path to heatsink or copper pour
3 (S)	Source	Reference node for gate drive; connects to low-side switch or ground return in half-bridge topologies

Key Features

Feature	Design Value
STripFET™ VI DeepGATE™ architecture	Reduces R_DS(on) × Q_g figure-of-merit by 25% vs. prior generation, enabling higher frequency operation
High avalanche ruggedness	150 mJ single-pulse E_AS allows reliable operation in inductive load switching without external snubbers
Low gate drive power requirement	20 nC Q_g reduces gate driver IC power consumption and heat generation in compact designs
Enhanced thermal performance	2.14 °C/W R_thj-case enables >30 W continuous dissipation with minimal heatsink volume
Robust body diode	1.1 V V_SD and 28.6 ns t_rr support efficient freewheeling in synchronous buck and H-bridge configurations

Applications

DC-DC Synchronous Buck Converter

Brushless DC Motor Inverter Stage

Use Scenario: 12–24 V input, 3–12 V output, 40–60 A load in telecom power supplies and server VRMs.

IC Role / Device Role / Timing Role: High-side power switch in synchronous rectification topology, switching at 300–500 kHz.

Use Value: 4.2 mΩ R_DS(on) and 20 nC Q_g reduce combined conduction + switching loss to <3.5 W at full load, improving efficiency by ≥1.2% vs. comparable 5 mΩ devices.

Use Scenario: 24 V battery-powered BLDC drives for industrial pumps and HVAC fans, operating at 10–20 kHz PWM.

IC Role / Device Role / Timing Role: Upper-leg phase switch in three-phase inverter, handling 80 A peak phase current with 150 mJ avalanche margin.

Use Value: 150 mJ E_AS and 320 A I_DM eliminate need for external clamping diodes during commutation transients, simplifying BOM and layout.

Automotive Body Control Module (BCM)

Industrial Solid-State Relay Replacement

Use Scenario: Load switching for headlights, cooling fans, and solenoids in 12 V automotive systems with ISO 7637-2 pulse immunity requirements.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) load switch controlled via microcontroller GPIO with integrated gate resistor.

Use Value: 30 V V_DS rating and 175 °C T_jmax ensure reliability across cold-crank (-40 °C) to under-hood hot-soak (150 °C) conditions without derating.

Use Scenario: Replacement of electromechanical relays in PLC output modules and building automation controllers handling 40–60 A resistive loads.

IC Role / Device Role / Timing Role: Solid-state power switch with zero-crossing capability disabled, supporting fast turn-on/turn-off for precise timing control.

Use Value: 2.14 °C/W R_thj-case and 70 W P_TOT allow direct mounting to chassis without auxiliary heatsinking, reducing footprint by >40% vs. relay+driver solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	R_DS(on) = 4.7 mΩ @ 10 V, Q_g = 131 nC, TO-220 package, R_thj-case = 1.25 °C/W	Higher conduction loss but lower gate charge; requires larger heatsink due to TO-220 thermal resistance	Preferable where gate drive voltage is limited to 5 V and board space permits discrete heatsink mounting
IXTH80N30L2	R_DS(on) = 3.8 mΩ @ 10 V, Q_g = 110 nC, TO-247 package, R_thj-case = 0.65 °C/W	Lower R_DS(on) but significantly higher Q_g; superior thermal performance but incompatible with D²PAK footprint	Recommended for high-reliability industrial inverters where thermal budget is critical and through-hole assembly is acceptable

Compared with IRF1404PBF and IXTH80N30L2, STB95N3LLH6 delivers optimal balance of low R_DS(on), moderate Q_g, and D²PAK surface-mount compatibility-making it ideal for space-constrained, high-current DC-DC and motor drive PCBs where thermal interface to copper pour is preferred over discrete heatsinks.

Availability

STB95N3LLH6 is available at Aetrix Electronics and suitable for DC-DC converter design, BLDC motor inverter development, and automotive body control module production requiring stable component supply and long-term lifecycle assurance.

Supply support for STB95N3LLH6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and consumer markets.

The STB95N3LLH6 belongs to ST's STripFET™ VI Power MOSFET product line, engineered specifically for high-efficiency, high-current switching in compact power conversion and motor control systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STB95N3LLH6 supports 61 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating from 80 A at 25 °C reflects thermal limits imposed by the D²PAK package's 2.14 °C/W junction-to-case resistance and safe operating area constraints.

Does this MOSFET require a gate resistor for stability in high-speed switching?

Yes-a gate resistor (typically 4.7 Ω) is recommended to dampen ringing and control dV/dt during switching, as validated in Figure 12 test circuit. The device's 2200 pF C_iss and 280 pF C_rss make it susceptible to oscillation without proper gate drive impedance matching.

Can STB95N3LLH6 be used in linear mode (non-switching) applications?

No-it is not characterized or rated for linear (ohmic) operation. The Safe Operating Area (SOA) curve in Figure 2 shows only pulsed and DC boundaries up to 80 A, with no guaranteed performance in sustained linear region; use is restricted to switching applications per datasheet scope.

Is the exposed drain tab electrically isolated from the PCB mounting pad?

No-the D²PAK drain tab (Pin 2) is internally connected to the MOSFET's drain and must be soldered directly to a large copper pour or heatsink. Electrical isolation requires insulating thermal interface material; the tab is not dielectric-coated and conducts fully to the silicon die.

STB95N3LLH6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™ VI

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.2mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24.5 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 70W (Tc)

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STB95N3LLH6 FAQ

1.How can I place an order for STB95N3LLH6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB95N3LLH6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB95N3LLH6 reliable?

The price and inventory of STB95N3LLH6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB95N3LLH6 is usually 5 days.

3.What payment methods are accepted for STB95N3LLH6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB95N3LLH6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB95N3LLH6?

STB95N3LLH6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB95N3LLH6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB95N3LLH6?

For technical support, including STB95N3LLH6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB95N3LLH6 requirements.

6.How does Aetrix verify that STB95N3LLH6 is sourced from the original manufacturer or authorized distributors?

All STB95N3LLH6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB95N3LLH6 meets industry standards.

7.What is the process for return or replacement of STB95N3LLH6?

All STB95N3LLH6 units undergo pre-shipment inspection (PSI). If there is an issue with STB95N3LLH6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB95N3LLH6 part is unused and in its original packaging.

Return procedure for STB95N3LLH6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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