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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB95N4F3

Name: STB95N4F3
Brand: STMicroelectronics
SKU: STB95N4F3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB95N4F3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB95N4F3.pdf

Description:: MOSFET N-CH 40V 80A D2PAK

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Product details

Overview

STB95N4F3 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in D²PAK (TO-263) package, designed for high-current automotive switching applications. It delivers 40 V V_DS, ≤5.8 mΩ R_DS(on) at V_GS = 10 V and I_D = 40 A, 80 A continuous drain current at T_C = 25 °C, and 110 W total power dissipation - enabling robust low-loss power control in engine management and body electronics.

For engineers reviewing the STB95N4F3 datasheet, STB95N4F3 pinout, STB95N4F3 application, or STB95N4F3 equivalent, this device is selected for high-reliability 12 V automotive loads where low conduction loss, 100% avalanche ruggedness, and standard gate drive compatibility are critical design requirements.

Technical Context

This MOSFET employs STMicroelectronics' STripFET™ III process to simultaneously minimize R_DS(on) and gate charge (Q_g = 54 nC typ.), supporting fast switching with low driver loss. Its 8 V/ns dv/dt rating and 400 mJ single-pulse avalanche energy ensure resilience against inductive transients in unclamped inductive load circuits.

The device features a source-drain diode with 1.5 V forward voltage at 80 A and 45 ns reverse recovery time under harsh conditions (T_j = 150 °C, di/dt = 100 A/µs), making it suitable for freewheeling and synchronous rectification roles without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V automotive battery systems including load dump surges.
R_DS(on) max	5.8 mΩ at V_GS = 10 V, I_D = 40 A - Enables <1.8 W conduction loss at 75 A, reducing heatsink requirements.
I_D (cont.)	80 A at T_C = 25 °C - Supports high-current solenoid, fan, and pump drivers without parallel devices.
E_AS	400 mJ - Withstands unclamped inductive switching events common in motor control and fuel injector circuits.
Q_g	54 nC - Optimized for efficient driving with standard 12 V gate drivers; reduces switching loss at 10–100 kHz.
T_j max	175 °C - Meets AEC-Q101 temperature stress requirements for under-hood automotive placement.
R_thj-case	1.36 °C/W - Enables thermal coupling to PCB copper or heatsink for sustained 65 A operation at T_C = 100 °C.

Pinout & Package

D²PAK (TO-263) package with exposed drain tab (pin 2) for thermal and electrical connection; 3-pin surface-mount configuration optimized for high-power PCB mounting and automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Controls channel conduction; requires ≤±20 V drive; threshold voltage 2–4 V enables direct microcontroller interface.
2 (D)	Drain (Tab)	High-current output node; electrically and thermally connected to exposed metal tab - must be soldered to large copper pour.
3 (S)	Source	Reference node for gate drive and current sensing; connects to ground or low-side switch return path.

Key Features

Feature	Design Value
STripFET™ III technology	Reduces R_DS(on) × Q_g figure-of-merit by >25% vs. prior generation - improves efficiency in PWM-driven loads.
100% avalanche tested	Guarantees ruggedness against inductive kickback without derating - eliminates need for external snubbers in relay/solenoid drivers.
Standard threshold drive	V_GS(th) = 2–4 V allows direct drive from 3.3 V or 5 V logic without level-shifting - simplifies gate driver design.
Low Q_gd/Q_g ratio	Q_gd = 11 nC of total 54 nC - minimizes Miller effect, improving noise immunity and hard-switching stability.

Applications

Automotive Engine Control

Body Electronics Switching

Use Scenario: High-side switching of fuel injectors and ignition coils in 12 V engine management units.

IC Role / Device Role / Timing Role: Power switch controlling precise 1–5 ms pulse-width modulated current delivery to inductive loads.

Use Value: 400 mJ E_AS and 8 V/ns dv/dt rating prevent failure during coil flyback, eliminating external clamping diodes.

Use Scenario: Low-side power distribution for HVAC blowers, seat motors, and window lift modules.

IC Role / Device Role / Timing Role: Main load switch activated via CAN/LIN-commanded MCU GPIO with PWM dimming capability.

Use Value: 5.8 mΩ R_DS(on) limits I²R loss to <3.5 W at 80 A peak, enabling compact board-level thermal design.

Industrial Motor Starters

Power Supply OR-ing

Use Scenario: Solid-state replacement for contactors in 24 V DC industrial conveyors and pumps.

IC Role / Device Role / Timing Role: High-current, slow-switching (≤10 Hz) main power disconnect with overcurrent fault handling.

Use Value: 320 A pulsed drain current (I_DM) supports 6× motor inrush without derating - reduces system BOM count.

Use Scenario: Redundant 12 V supply OR-ing in telematics control units and ADAS domain controllers.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFET acting as ideal diode with <1.5 V forward drop.

Use Value: Integrated source-drain diode with 1.5 V V_SD at 80 A enables efficient bidirectional conduction without discrete diode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404ZPBF	R_DS(on) = 4.7 mΩ (lower), but Q_g = 131 nC (2.4× higher); TO-220 package only.	Lacks D²PAK footprint and 100% avalanche test; not qualified for automotive under-hood use.	Prefer when lowest conduction loss dominates and gate drive strength permits higher Q_g.
STL95N4F3	Same STripFET™ III die in PowerFLAT™ 8×8 package; R_DS(on) = 5.8 mΩ, but R_thj-a = 20 °C/W (vs. 30 °C/W for D²PAK on 1″² board).	Surface-mount alternative with superior thermal performance on dense PCBs; no through-hole option.	Choose for space-constrained automotive ECUs requiring higher power density and reflow compatibility.

Compared with IRF1404ZPBF and STL95N4F3, STB95N4F3 uniquely balances low R_DS(on), moderate Q_g, D²PAK thermal scalability, and AEC-Q101-aligned avalanche ruggedness - making it optimal for cost-sensitive, high-reliability automotive power stages where both conduction and switching losses matter.

Availability

STB95N4F3 is available at Aetrix Electronics and suitable for automotive engine control, body electronics switching, and industrial motor starters requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for STB95N4F3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power management ICs and discrete devices.

This device belongs to ST's STripFET™ Power MOSFET product line, engineered specifically for high-efficiency, high-ruggedness switching in 12 V and 24 V automotive and industrial power systems.

FAQ

Is STB95N4F3 AEC-Q101 qualified?

No - while STB95N4F3 is widely used in automotive applications and features 100% avalanche testing and 175 °C maximum junction temperature, ST does not list it as AEC-Q101 qualified in official documentation. For certified automotive-grade designs, ST recommends STB95NF03L or STL95N4F3 with formal qualification reports.

What is the recommended PCB layout for thermal performance?

Mount the D²PAK drain tab directly to ≥25 mm² of 2 oz copper on inner or outer layer, connected via ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch) to internal ground/power planes. Maintain ≥1.5 mm clearance from other components to avoid thermal crosstalk and ensure R_thj-a ≤30 °C/W.

Can STB95N4F3 be used in synchronous rectification?

Yes - its integrated source-drain diode has 1.5 V forward voltage at 80 A and 45 ns reverse recovery time at 150 °C, enabling use in low-frequency (<50 kHz) synchronous rectification. However, for high-frequency SMPS, dedicated low-V_F Schottky or trench MOSFETs are preferred due to lower Q_rr.

What gate resistor value is recommended for 20 kHz PWM switching?

A 4.7 Ω gate resistor is validated per datasheet Figure 16 for 20 V gate drive and 40 A load. This provides balanced turn-on/turn-off times (t_d(on) ≈15 ns, t_f ≈15 ns) while limiting peak gate current to ~4.3 A and suppressing ringing - adjust ±20% based on actual PCB trace inductance and driver capability.

STB95N4F3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ III

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.8mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 54 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STB95N4F3 FAQ

1.How can I place an order for STB95N4F3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB95N4F3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB95N4F3 reliable?

The price and inventory of STB95N4F3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB95N4F3 is usually 5 days.

3.What payment methods are accepted for STB95N4F3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB95N4F3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB95N4F3?

STB95N4F3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB95N4F3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB95N4F3?

For technical support, including STB95N4F3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB95N4F3 requirements.

6.How does Aetrix verify that STB95N4F3 is sourced from the original manufacturer or authorized distributors?

All STB95N4F3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB95N4F3 meets industry standards.

7.What is the process for return or replacement of STB95N4F3?

All STB95N4F3 units undergo pre-shipment inspection (PSI). If there is an issue with STB95N4F3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB95N4F3 part is unused and in its original packaging.

Return procedure for STB95N4F3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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