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STMicroelectronics STB9NK50ZT4
- Part No.:
- STB9NK50ZT4
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB9NK50ZT4.pdf
- Description:
- MOSFET N-CH 500V 7.2A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,025
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Product details
Overview
STB9NK50ZT4 from STMicroelectronics is a Zener-protected N-channel SuperMESH Power MOSFET rated for 500 V drain-source voltage, 700 mΩ typical RDS(on), and 7.2 A continuous drain current at TC = 25 °C, housed in a D²PAK (TO-263) package. It delivers high dv/dt capability and 100% avalanche-tested ruggedness for high-voltage switching in offline SMPS and industrial motor drives.
For engineers reviewing the STB9NK50ZT4 datasheet, STB9NK50ZT4 pinout, STB9NK50ZT4 application, or STB9NK50ZT4 equivalent, key selection criteria include its 190 mJ single-pulse avalanche energy, 4.5 V/ns peak diode recovery dv/dt rating, gate charge of 32 nC, and thermal resistance RthJC of 1.14 °C/W - all critical for reliable high-stress flyback and resonant converter designs.
Technical Context
This device implements ST's SuperMESH process - an optimized evolution of PowerMESH - to reduce on-resistance while maintaining robustness against unclamped inductive switching stress. Its Zener-protected gate structure enables ±30 V VGS tolerance and 3.5 kV HBM ESD rating without external clamping.
The MOSFET features low intrinsic capacitance (Ciss = 910 pF, Coss = 125 pF) and fast switching (td(on) = 17 ns, tf = 22 ns), enabling high-frequency operation up to 100 kHz in hard-switched topologies. Its source-drain diode supports synchronous rectification with trr = 238 ns and Qrr = 1.5 µC at 150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - Supports full mains input (85–265 VAC) with margin for surge and ringing in offline converters. |
| RDS(on) max | 850 mΩ - Limits conduction loss to ≤4.4 W at 7.2 A, enabling thermally constrained PCB layouts. |
| ID cont @ TC=25°C | 7.2 A - Sustains peak load current in 100–300 W SMPS without derating below 100 °C case temperature. |
| EAS | 190 mJ - Withstands single unclamped inductive energy events (e.g., transformer saturation) without failure. |
| dv/dt (peak) | 4.5 V/ns - Ensures immunity to false turn-on during high-slew-rate voltage transients in bridge-leg configurations. |
| Qg | 32 nC - Enables efficient gate drive with standard 1-A peak drivers at ≤100 kHz switching frequency. |
| RthJC | 1.14 °C/W - Allows direct heatsink mounting to dissipate 110 W junction-to-case power with ≤125 °C ΔT. |
Pinout & Package
STB9NK50ZT4 is supplied in a surface-mount D²PAK (TO-263) package with exposed drain tab for thermal and electrical connection. The package complies with ECOPACK environmental standards and uses standard reflow profiles.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 10 V logic-level drive; Zener-clamped to ±30 V for ESD robustness. |
| 2 (D / TAB) | Drain (exposed tab) | Main high-side power path; electrically and thermally connected to heatsink; requires isolation if heatsink is grounded. |
| 3 (S) | Source | Power return reference; ties to ground or low-side switch node; defines VGS control voltage. |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Guarantees minimum 190 mJ single-pulse avalanche energy per unit - eliminates screening failures in production. |
| SuperMESH cell architecture | Reduces RDS(on) by ~25% vs. legacy PowerMESH while preserving breakdown integrity and switching speed. |
| Zener-protected gate | Integrates bidirectional gate-source Zener (±30 V) - removes need for external TVS in most industrial environments. |
| Low gate charge (Qg) | 32 nC total charge minimizes driver power loss and simplifies gate drive design for <100 kHz applications. |
| High dv/dt immunity | 4.5 V/ns rating prevents spurious turn-on during fast voltage transitions in half-bridge or LLC resonant circuits. |
Applications
| Industrial Motor Drives | Offline Switch-Mode Power Supplies |
|---|---|
|
Use Scenario: Half-bridge inverter stage for 200–500 W brushless DC motor controllers operating from 300 VDC bus. IC Role / Device Role / Timing Role: High-side N-channel switch in hard-switched topology; synchronized with low-side FET via dead-time control. Use Value: Avalanche ruggedness ensures survival during motor stall or short-circuit events; low RDS(on) reduces thermal stress under continuous 7.2 A load. |
Use Scenario: Primary-side switch in 150 W universal-input flyback converter for LED lighting and industrial sensors. IC Role / Device Role / Timing Role: Main power switch modulated at 65 kHz; handles 500 V transient spikes during demagnetization. Use Value: 4.5 V/ns dv/dt rating prevents false triggering from transformer leakage spikes; 190 mJ EAS absorbs energy during overvoltage faults. |
| Uninterruptible Power Supplies | AC-DC Adapters for Industrial Equipment |
|
Use Scenario: Boost PFC stage in 300 VA online UPS with active hold-up capacitor charging. IC Role / Device Role / Timing Role: Fast-switching boost switch operating in continuous conduction mode (CCM) at 70 kHz. Use Value: Low Coss (125 pF) and Crss (30 pF) minimize switching loss and improve light-load efficiency; Zener gate protection sustains reliability across line surges. |
Use Scenario: Primary-side switch in 24 V/5 A AC-DC adapter for programmable logic controllers (PLCs) and I/O modules. IC Role / Device Role / Timing Role: Hard-switched MOSFET in quasi-resonant (QR) flyback with valley-switching control. Use Value: 700 mΩ typical RDS(on) enables >88% efficiency at full load; D²PAK package allows direct heatsinking to metal chassis for convection cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP9NK50Z | Same die, TO-220 through-hole package; RthJC = 4.2 °C/W; PTOT = 30 W (vs. 110 W for STB9NK50ZT4). | Lower power density; suited for lower-current (<4.5 A) or forced-air-cooled designs where board space permits leaded mounting. | Select when mechanical robustness, serviceability, or prototyping convenience outweighs thermal performance needs. |
| FQP5N50CTU | 500 V, 1.2 Ω RDS(on) max, 4.5 A ID; no integrated Zener protection; Ciss = 720 pF; EAS not specified. | Lacks avalanche rating and gate Zener - requires external protection and careful SOA management in demanding topologies. | Consider only in cost-sensitive, low-stress applications with conservative voltage derating and external clamping. |
Compared with STP9NK50Z and FQP5N50CTU, STB9NK50ZT4 provides superior thermal performance (1.14 °C/W), guaranteed avalanche capability, and integrated gate protection - making it the preferred choice for compact, high-reliability 7.2 A switching stages where D²PAK mounting is feasible.
Availability
STB9NK50ZT4 is available at Aetrix Electronics and suitable for industrial motor drives, offline switch-mode power supplies, uninterruptible power supplies, and AC-DC adapters requiring stable component supply and long-term manufacturing continuity.
Supply support for STB9NK50ZT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.
This device belongs to ST's SuperMESH Power MOSFET product line - engineered specifically for high-efficiency, high-reliability switching in 400–650 V industrial and offline power conversion systems.
FAQ
What is the maximum safe operating temperature for STB9NK50ZT4?
The STB9NK50ZT4 has a specified operating junction temperature range of –55 °C to +150 °C. Its absolute maximum rating assumes proper heatsinking to maintain TJ ≤ 150 °C under worst-case power dissipation (110 W). Derating is required above TC = 25 °C per the RthJC = 1.14 °C/W specification.
Does STB9NK50ZT4 require external gate protection?
No - STB9NK50ZT4 integrates bidirectional Zener protection between gate and source, rated for ±30 V, and is qualified to 3.5 kV HBM ESD. External gate resistors (e.g., 10–47 Ω) are still recommended for ringing suppression, but discrete TVS diodes are unnecessary in standard industrial environments.
Can STB9NK50ZT4 replace STP9NK50Z in existing TO-220 designs?
No - STB9NK50ZT4 uses a D²PAK (TO-263) surface-mount package with different footprint, thermal path, and pinout (G-D-S vs. G-D-S but tab-as-drain). Direct replacement requires PCB redesign, new thermal interface, and revalidation of gate drive timing due to lower RthJC and higher peak current capability.
What is the significance of the "100% avalanche tested" specification?
Each STB9NK50ZT4 unit undergoes individual unclamped inductive switching (UIS) testing at 190 mJ - verifying its ability to absorb inductive energy without degradation. This ensures field reliability in applications like motor drives and PFC where sudden current interruptions generate high-voltage spikes across the drain-source terminals.
STB9NK50ZT4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- SuperMESH™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 850mOhm @ 3.6A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 32 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 910 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 110W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
STB9NK50ZT4 FAQ
1.How can I place an order for STB9NK50ZT4 through Aetrix?
Please submit a Request for Quotation (RFQ) for STB9NK50ZT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB9NK50ZT4 reliable?
The price and inventory of STB9NK50ZT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB9NK50ZT4 is usually 5 days.
3.What payment methods are accepted for STB9NK50ZT4?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB9NK50ZT4 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB9NK50ZT4?
STB9NK50ZT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB9NK50ZT4 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB9NK50ZT4?
For technical support, including STB9NK50ZT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB9NK50ZT4 requirements.
6.How does Aetrix verify that STB9NK50ZT4 is sourced from the original manufacturer or authorized distributors?
All STB9NK50ZT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB9NK50ZT4 meets industry standards.
7.What is the process for return or replacement of STB9NK50ZT4?
All STB9NK50ZT4 units undergo pre-shipment inspection (PSI). If there is an issue with STB9NK50ZT4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB9NK50ZT4 part is unused and in its original packaging.
Return procedure for STB9NK50ZT4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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