STMicroelectronics STB9NK60ZDT4
- Part No.:
- STB9NK60ZDT4
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB9NK60ZDT4.pdf
- Description:
- MOSFET N-CH 600V 7A D2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:7,621
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Product details
Overview
STB9NK60ZDT4 from STMicroelectronics is an N-channel 600 V, 0.85 Ω typ. RDS(on), 7 A Zener-protected SuperFREDMESH™ Power MOSFET in D²PAK package with integrated fast body-diode (trr = 130 ns), rated for 125 W total dissipation and 15 V/ns dv/dt capability. It serves as a high-voltage switching device in offline SMPS and PFC stages.
For engineers reviewing the STB9NK60ZDT4 datasheet, STB9NK60ZDT4 pinout, STB9NK60ZDT4 application, or STB9NK60ZDT4 equivalent, key selection criteria include its Zener-protected gate (BVGSO = 30 V), low Coss,eq (72 pF), 100% avalanche tested rating (EAS = 235 mJ), and thermal resistance (Rthj-case = 1 °C/W).
Technical Context
This MOSFET employs ST's SuperFREDMESH™ process to co-optimize conduction loss, switching speed, and ruggedness. Its internal structure integrates a fast-recovery source-drain diode with trr = 130 ns (Tj = 25 °C) and Qrr = 550 nC, enabling hard-switched topologies without external snubbers.
The device features built-in back-to-back gate-source Zener diodes (BVGSO = 30 V, IGS = ±1 mA), eliminating need for external gate protection. Its 15 V/ns dv/dt rating and 100% unclamped inductive avalanche testing (IAR = 7 A, EAS = 235 mJ) support reliable operation under transient overvoltage and inductive turn-off stress.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - supports 400 V AC mains-derived DC bus with 50% safety margin |
| RDS(on) max | 0.95 Ω @ VGS = 10 V, ID = 3.5 A - enables <1.2 W conduction loss at 3.5 A |
| ID continuous | 7 A @ TC = 25 °C - suitable for medium-power switch-mode converters up to ~350 W |
| trr | 130 ns @ ISD = 7 A, di/dt = 100 A/µs - reduces switching loss and EMI in hard-switched flyback/PFC |
| Qg | 41–53 nC - enables efficient gate drive with standard 1-A peak drivers |
| Rthj-case | 1 °C/W - allows full 125 W power dissipation with minimal heatsink (ΔT = 125 °C) |
| EAS | 235 mJ @ Tj = 25 °C - sustains single-pulse inductive energy without failure |
Pinout & Package
Package: D²PAK (TO-263), surface-mount, thermally enhanced with exposed drain tab (pin 2/TAB). Mounting requires soldering the tab to ≥1 in² 2 oz copper PCB area for optimal thermal performance (Rthj-pcb = 30 °C/W).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Pin 1) | Gate terminal | Control input; Zener-protected (±30 V abs max); requires ≤10 V drive for full enhancement |
| D (Pin 2 / TAB) | Drain terminal | Main high-side power node; electrically connected to exposed metal tab for thermal and electrical path |
| S (Pin 3) | Source terminal | Power return and reference node; ties to gate driver ground; carries full load current and diode reverse recovery charge |
Key Features
| Feature | Design Value |
|---|---|
| Zener-protected gate | Integrated 30 V back-to-back Zeners eliminate need for external gate clamp diodes |
| Faster body diode | 130 ns trr and 550 nC Qrr reduce switching loss and voltage overshoot vs standard MOSFETs |
| High dv/dt immunity | 15 V/ns rating ensures robustness against parasitic turn-on in high-speed, high-voltage layouts |
| 100% avalanche tested | Each unit validated for 235 mJ single-pulse energy, enabling reliable unclamped inductive switching |
| Low gate charge | 41–53 nC Qg minimizes driver power and enables >100 kHz operation with low gate loss |
Applications
| AC-DC Adapter Power Supply | Industrial LED Driver |
|---|---|
Use Scenario: 65–150 W universal-input flyback converter with primary-side regulation. IC Role / Device Role / Timing Role: Main high-side switching transistor handling 400 V DC bus and delivering regulated output via transformer coupling. Use Value: Fast diode recovery (130 ns) suppresses ringing and reduces snubber losses; Zener gate protection prevents ESD-induced failure during assembly. | Use Scenario: Constant-current buck-boost LED driver for street lighting operating from 277 V AC line. IC Role / Device Role / Timing Role: Primary switch in isolated SEPIC or flyback topology driving 40–80 V LED strings at 1–2 A. Use Value: 600 V rating accommodates surge transients on commercial lighting circuits; 125 W rating supports thermal headroom at 70 °C ambient. |
| Server PSU PFC Stage | Appliance Motor Drive |
Use Scenario: Boost PFC front-end in 500–800 W server power supply with active clamp control. IC Role / Device Role / Timing Role: High-voltage boost switch operating at 65–100 kHz with discontinuous/continuous conduction mode. Use Value: Low Coss,eq (72 pF) reduces capacitive turn-on loss; 15 V/ns dv/dt rating prevents false triggering during fast voltage transitions. | Use Scenario: Inverter leg switch in 150–300 W BLDC motor controller for HVAC blowers or washing machine pumps. IC Role / Device Role / Timing Role: Low-side or high-side switching element in 3-phase bridge, commutated at 10–20 kHz. Use Value: Avalanche ruggedness (235 mJ) absorbs inductive kickback during PWM dead-time; 0.95 Ω RDS(on) limits conduction loss at 7 A peak. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP9NK60ZFP | Same die, TO-220FP package; higher Rthj-case (1.25 °C/W); no exposed drain tab | Lower power density; unsuitable for space-constrained SMT designs requiring minimal footprint | Select when through-hole mounting and lower cost outweigh thermal performance needs |
| IPP60R099CP | 650 V, 0.099 Ω, TO-220; CoolMOS™ P6; lower RDS(on) but no integrated Zener or fast diode | Requires external gate protection and freewheeling diode; optimized for high-efficiency, high-frequency resonant topologies | Select when efficiency >100 kHz and external component count is acceptable |
Compared with STP9NK60ZFP and IPP60R099CP, STB9NK60ZDT4 uniquely combines Zener gate protection, fast body diode, and D²PAK thermal performance-making it optimal for cost-sensitive, medium-power SMT SMPS where layout simplicity and ruggedness are prioritized over ultra-low RDS(on).
Availability
STB9NK60ZDT4 is available at Aetrix Electronics and suitable for AC-DC adapters, industrial LED drivers, server PSU PFC stages, and appliance motor drives requiring stable component supply across production lifecycles.
Supply support for STB9NK60ZDT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.
This device belongs to ST's SuperFREDMESH™ Power MOSFET product line, engineered specifically for high-voltage, medium-power switching applications demanding ruggedness, integrated protection, and simplified board-level design.
FAQ
What is the maximum gate-source voltage rating for STB9NK60ZDT4?
The absolute maximum gate-source voltage (VGS) is ±30 V. The integrated back-to-back Zener diodes clamp at 30 V (BVGSO = 30 V @ IGS = ±1 mA), providing robust protection against ESD and gate transients without external components. Exceeding ±30 V risks permanent gate oxide damage.
Does STB9NK60ZDT4 require an external freewheeling diode in flyback applications?
No. STB9NK60ZDT4 integrates a fast-recovery source-drain diode with trr = 130 ns and Qrr = 550 nC, explicitly designed for use in flyback and other inductive-switching topologies. Its soft recovery characteristic reduces voltage overshoot and EMI, eliminating the need for an external diode in most medium-frequency designs.
How is thermal performance affected when the D²PAK drain tab is not soldered to a large copper area?
When the exposed drain tab is not soldered to ≥1 in² of 2 oz copper, Rthj-pcb degrades from 30 °C/W to >60 °C/W. This reduces safe operating power from 125 W to <60 W at TC = 25 °C. Full thermal rating requires proper tab soldering per Figure 21 footprint and IPC-7351 guidelines.
Is STB9NK60ZDT4 qualified for automotive applications?
No. STB9NK60ZDT4 is not AEC-Q101 qualified and is not recommended for automotive use. ST explicitly states in the datasheet that its products are "not designed or authorized for use in automotive applications or environments." For automotive-grade alternatives, consult ST's AEC-Q101-certified MDmesh™ or STripFET™ families.
STB9NK60ZDT4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- SuperFREDmesh™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 950mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 53 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1110 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 125W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
STB9NK60ZDT4 FAQ
1.How can I place an order for STB9NK60ZDT4 through Aetrix?
Please submit a Request for Quotation (RFQ) for STB9NK60ZDT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of STB9NK60ZDT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB9NK60ZDT4 is usually 5 days.
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6.How does Aetrix verify that STB9NK60ZDT4 is sourced from the original manufacturer or authorized distributors?
All STB9NK60ZDT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB9NK60ZDT4 meets industry standards.
7.What is the process for return or replacement of STB9NK60ZDT4?
All STB9NK60ZDT4 units undergo pre-shipment inspection (PSI). If there is an issue with STB9NK60ZDT4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB9NK60ZDT4 part is unused and in its original packaging.
Return procedure for STB9NK60ZDT4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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