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STMicroelectronics STB9NK80Z
- Part No.:
- STB9NK80Z
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB9NK80Z.pdf
- Description:
- MOSFET N-CH 800V 5.2A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:896
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Product details
Overview
STB9NK80Z from STMicroelectronics is an AEC-Q101-qualified, Zener-protected N-channel SuperMESH Power MOSFET in D²PAK (TO-263) package, rated for 800 V drain-source voltage, 1.8 Ω max RDS(on), and 5.2 A continuous drain current at TC = 25 °C. It delivers high dv/dt immunity and 100% avalanche-tested ruggedness for automotive and industrial high-voltage switching.
For engineers reviewing the STB9NK80Z datasheet, STB9NK80Z pinout, STB9NK80Z application, or STB9NK80Z equivalent, key selection criteria include its 4.5 V/ns peak diode recovery dv/dt capability, 210 mJ single-pulse avalanche energy, 40 nC total gate charge, and Zener-protected gate structure - all critical for flyback, PFC, and SMPS designs operating under harsh transients.
Technical Context
This device implements ST's SuperMESH process - an optimized evolution of PowerMESH - to simultaneously reduce on-resistance and intrinsic capacitance while maintaining robust avalanche performance. Its Zener-protected gate ensures ±30 V VGS tolerance and ESD immunity up to 4 kV (HBM).
The MOSFET supports unclamped inductive switching with verified 5.2 A repetitive avalanche current and operates across −55 °C to +150 °C junction temperature. Its low Ciss (1138 pF typ.) and minimized Qg (40 nC) enable fast, efficient hard-switching in high-frequency converters up to several hundred kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 800 V - Supports primary-side switching in offline 400 V AC–DC and 800 V DC bus applications without derating. |
| RDS(on) max | 1.8 Ω @ VGS = 10 V, ID = 2.6 A - Enables low conduction loss in <5 A medium-power SMPS stages. |
| ID cont. (TC = 25 °C) | 5.2 A - Sustains continuous load in thermally managed TO-263-mount designs with RthJC = 1 °C/W. |
| EAS | 210 mJ - Guarantees reliable operation during unclamped inductive turn-off events in PFC and flyback topologies. |
| dv/dt (peak) | 4.5 V/ns - Prevents spurious turn-on in high-noise environments such as motor drives and industrial inverters. |
| Qg | 40 nC - Reduces gate drive power and enables use with standard 1–2 A peak gate drivers (e.g., STGAP2SIC). |
| VGS(th) | 3.0–4.5 V - Ensures clean logic-level compatibility with 5 V microcontrollers and avoids marginal turn-on near 3.3 V rails. |
Pinout & Package
STB9NK80Z is housed in a surface-mount D²PAK (TO-263) package with exposed drain tab for thermal enhancement. The three-terminal configuration places Drain on the large metal tab (Pin 2), Gate on Pin 1, and Source on Pin 3.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal; accepts 10 V drive for full enhancement; Zener-clamped to ±30 V for overvoltage protection. |
| Pin 2 (D / TAB) | Drain (exposed tab) | Main high-voltage power terminal; electrically connected to heatsink; requires isolation if mounted to chassis ground. |
| Pin 3 (S) | Source | Power return path and reference for gate drive; ties to low-side switch node or current-sense resistor. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive powertrain and body electronics per stress test requirements (HTOL, TC, HTRB, etc.). |
| 100% avalanche tested | Each unit undergoes unclamped inductive switching verification at IAR = 5.2 A and EAS = 210 mJ. |
| Zener-protected gate | Integrated gate-body Zener clamps VGS to ±30 V, eliminating need for external gate protection components. |
| Low Coss eq. | 50 pF equivalent output capacitance reduces switching loss during zero-voltage transition and improves efficiency above 100 kHz. |
| High dv/dt immunity | 4.5 V/ns rating prevents false triggering in noisy high-dV/dt circuits like LLC resonant converters and half-bridge inverters. |
Applications
| Automotive Onboard Charger (OBC) | Industrial Flyback Converter |
|---|---|
Use Scenario: Primary-side switching in 3.3 kW bidirectional OBCs with 800 V battery architecture. IC Role / Device Role / Timing Role: High-voltage N-channel switch in asymmetric half-bridge or flyback topology; handles 50–100 kHz switching with soft-recovery diode. Use Value: Avalanche ruggedness and 150 °C TJ rating ensure reliability under repeated regenerative braking transients and thermal cycling. |
Use Scenario: Isolated auxiliary supply for PLC I/O modules requiring 24 V/1 A output from 400 V DC bus. IC Role / Device Role / Timing Role: Primary-side power switch in discontinuous conduction mode (DCM) flyback; operates at fixed 65 kHz with current-mode control. Use Value: Low Qg and minimized Ciss reduce driver losses and improve light-load efficiency beyond 85% at 10% load. |
| Server PSU PFC Stage | AC-DC Adapter for Medical Equipment |
Use Scenario: Boost switch in active PFC front-end for 1 kW server power supplies compliant with 80 PLUS Titanium. IC Role / Device Role / Timing Role: High-voltage switch in continuous conduction mode (CCM) boost converter; driven by UCC28070 or similar controller. Use Value: 1.8 Ω RDS(on) and 125 W PTOT allow compact heatsinking while sustaining >96% PFC efficiency at full load. |
Use Scenario: Primary-side switch in Class II, double-insulated 65 W medical-grade AC-DC adapter meeting IEC 60601-1 creepage/clearance and leakage limits. IC Role / Device Role / Timing Role: Main switch in quasi-resonant flyback with integrated Y-capacitor isolation and reinforced insulation barrier. Use Value: AEC-Q101 qualification provides proven long-term reliability and reduced infant mortality in safety-critical life-support peripherals. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW9NK80Z | Same die, but in TO-247 package; higher RthJA (40 °C/W vs 62.5 °C/W), no exposed tab for solder mounting. | Better suited for through-hole prototyping or forced-air-cooled industrial UPS where mechanical robustness outweighs PCB space constraints. | Select when board-level thermal management is impractical and discrete heatsink mounting is preferred. |
| FQP8N80C | Non-automotive grade; RDS(on) = 1.5 Ω typ. but not avalanche-tested; no Zener gate protection; VGS rating only ±20 V. | Acceptable for cost-sensitive consumer adapters but lacks AEC-Q101 validation and fails under repetitive avalanche stress. | Use only in non-safety-critical, low-duty-cycle applications where transient immunity is not required. |
Compared with STW9NK80Z and FQP8N80C, STB9NK80Z uniquely combines automotive qualification, Zener gate protection, and D²PAK thermal performance - making it the only choice for space-constrained, high-reliability 800 V switching where board-level thermal design and transient immunity are co-optimized.
Availability
STB9NK80Z is available at Aetrix Electronics and suitable for automotive onboard chargers, industrial flyback converters, and server PFC stages requiring stable component supply and long-term lifecycle support.
Supply support for STB9NK80Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.
STB9NK80Z belongs to ST's SuperMESH Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 600–900 V applications where avalanche robustness and gate protection are mandatory.
FAQ
Is STB9NK80Z suitable for zero-voltage switching (ZVS) topologies?
Yes. With Coss eq. = 50 pF and low Qgd/Qgs ratio (21 nC / 7 nC), STB9NK80Z enables reliable ZVS in LLC resonant converters operating up to 300 kHz. Its 4.5 V/ns dv/dt rating prevents false turn-on during resonant transitions, and the Zener-protected gate withstands the voltage spikes common in resonant tank ringing.
What is the maximum recommended gate resistor value for driving STB9NK80Z in a 100 kHz flyback?
For 100 kHz operation with 40 nC Qg, a 10 Ω gate resistor limits peak current to ~1 A and achieves ~100 ns turn-on delay - well within safe SOA limits. Higher values (>22 Ω) increase switching loss and risk thermal runaway at full load; lower values (<4.7 Ω) require ≥2 A peak driver capability to avoid overshoot.
Does STB9NK80Z require external gate protection when used with a 12 V microcontroller?
No. Its integrated Zener clamps gate-to-source voltage to ±30 V, fully covering 12 V drive with margin. No external TVS or resistors are needed unless the gate trace exceeds 5 cm in length or runs parallel to high-dV/dt nodes - in which case a 100 Ω series resistor suffices for EMI suppression.
Can STB9NK80Z replace STP9NK80Z in existing designs?
Yes, with identical pinout and electrical specs, but STB9NK80Z offers enhanced AEC-Q101 qualification and 100% avalanche testing - whereas STP9NK80Z is legacy TO-220 and not automotive-qualified. Layout remains compatible, but thermal pad soldering must be verified for D²PAK footprint alignment and void control.
STB9NK80Z Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- SuperMESH™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 800 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.8Ohm @ 2.6A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 40 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1138 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 125W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
STB9NK80Z FAQ
1.How can I place an order for STB9NK80Z through Aetrix?
Please submit a Request for Quotation (RFQ) for STB9NK80Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB9NK80Z reliable?
The price and inventory of STB9NK80Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB9NK80Z is usually 5 days.
3.What payment methods are accepted for STB9NK80Z?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB9NK80Z transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB9NK80Z?
STB9NK80Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB9NK80Z order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB9NK80Z?
For technical support, including STB9NK80Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB9NK80Z requirements.
6.How does Aetrix verify that STB9NK80Z is sourced from the original manufacturer or authorized distributors?
All STB9NK80Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB9NK80Z meets industry standards.
7.What is the process for return or replacement of STB9NK80Z?
All STB9NK80Z units undergo pre-shipment inspection (PSI). If there is an issue with STB9NK80Z, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB9NK80Z part is unused and in its original packaging.
Return procedure for STB9NK80Z:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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