STMicroelectronics STC5DNF30V

Overview

STC5NF30V from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in TSSOP8 package, rated for 30 V V_DS, 5 A continuous drain current at 25°C, and ultra-low 2.7 V gate threshold voltage enabling direct drive from 3.3 V logic. It delivers 0.027 Ω R_DS(on) at V_GS = 4.5 V and features rugged avalanche capability for robust switching in DC-DC converters and motor control stages.

For engineers reviewing the STC5NF30V datasheet, STC5NF30V pinout, STC5NF30V application, or STC5NF30V equivalent, this device is selected for low-voltage, high-efficiency power switching where gate drive headroom is constrained, thermal management on FR-4 is critical, and surface-mount assembly compatibility with TSSOP8 footprint is required.

Technical Context

This MOSFET employs ST's StripFET™ II process with single-feature-size strip geometry to achieve high cell density and low specific on-resistance. Its 2.7 V V_GS(th) enables full enhancement under 3.3 V logic-level drive, while its 0.031 Ω R_DS(on) at 2.7 V ensures usable conduction even at minimum gate voltage.

The device exhibits 83.5 °C/W junction-to-PBC thermal resistance on minimum recommended footprint and supports 20 A pulsed drain current (I_DM) within safe operating area limits. Its integrated source-drain diode shows 1.2 V forward voltage at 5 A and 26 ns reverse recovery time under specified test conditions.

Key Specifications

Pinout & Package

Package: TSSOP8 (Thin Shrink Small Outline Package, 8-lead, 3.0 mm × 4.4 mm body, 0.65 mm pitch). Compliant with ECOPACK® environmental standard and lead-free second-level interconnect.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with STP5NF30L and IRLML0030TRPBF, STC5NF30V uniquely balances TSSOP8 manufacturability, 5 A current capability, and 0.027 Ω conduction loss-making it optimal for automated SMT assembly of mid-power DC-DC and motor control modules where board area and thermal performance are jointly constrained.

Availability

STC5NF30V is available at Aetrix Electronics and suitable for DC-DC converters, USB power switches, and brushed DC motor drivers requiring stable component supply and long-term industrial availability despite its obsolete status.

Supply support for STC5NF30V includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

The STripFET™ power MOSFET product line targets high-efficiency, surface-mount power switching applications where low R_DS(on), logic-level drive, and thermal reliability are essential in space-constrained systems.

FAQ

Is STC5NF30V still in active production?

No-STC5NF30V is marked "Obsolete Product(s)" in the official ST datasheet (Rev 2, Aug 2006). However, Aetrix Electronics maintains legacy inventory with full traceability and offers lifecycle coordination support, including cross-reference guidance and last-time-buy planning for ongoing production programs.

What is the maximum safe operating frequency for STC5NF30V in PWM applications?

Based on its 27 ns turn-off delay and 10 ns fall time (with 4.7 Ω gate resistor), STC5NF30V supports reliable operation up to 500 kHz in hard-switched topologies. For >200 kHz use, gate drive strength must exceed 100 mA peak to fully charge its 8.5 nC gate capacitance within timing constraints.

Can STC5NF30V be used in high-side switch configurations?

No-it is an N-channel MOSFET with no integrated charge pump or bootstrap circuitry. High-side operation would require ≥30 V gate drive relative to the source, which is incompatible with its 12 V absolute maximum V_GS. It is designed exclusively for low-side switching where source is grounded or near-ground potential.

How does the TSSOP8 thermal pad (Pin 8) affect PCB layout?

The exposed drain pad (Pin 8) must be soldered to a minimum 1-inch² copper pour on the PCB's inner or outer layer, using ≥4 thermal vias (0.3 mm diameter) to internal ground planes. Failure to implement this reduces R_thJ-PBC from 83.5 to 100 °C/W, increasing junction temperature by up to 15°C at 5 A continuous load.