STMicroelectronics STC5NF20V

Overview

STC5NF20V from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in TSSOP8 package, rated for 20 V drain-source voltage, 5 A continuous drain current at 25°C, and ultra-low 0.030 Ω R_DS(on) at V_GS = 4.5 V. It features 2.7 V logic-level gate drive compatibility and rugged avalanche capability, deployed in low-voltage DC-DC converter high-side switches.

For engineers reviewing the STC5NF20V datasheet, STC5NF20V pinout, STC5NF20V application, or STC5NF20V equivalent, key selection criteria include its 2.7 V threshold voltage, 0.037 Ω R_DS(on) at 2.7 V, 8.5 nC total gate charge, TSSOP8 thermal resistance of 83.5 °C/W on minimum footprint, and suitability for space-constrained 3.3 V/5 V control interface designs.

Technical Context

This MOSFET employs ST's STripFET™ II strip-based process, delivering high cell density for low on-resistance and improved manufacturing reproducibility. Its gate threshold voltage (0.6 V min, 1.2 V typ) enables reliable turn-on with 2.7 V logic drivers, while the 20 V V_DSS rating targets 12 V and lower bus systems.

The device exhibits 9.5 S forward transconductance at 2.5 A and 15 V, with 460 pF input capacitance and 50 pF reverse transfer capacitance-enabling fast switching (t_d(on) = 7 ns, t_f = 10 ns) under 4.7 Ω gate resistance. Its source-drain diode supports synchronous rectification with 1.2 V forward drop at 5 A.

Key Specifications

Pinout & Package

TSSOP8 (Thin Shrink Small Outline Package, 8-lead), 3.0 mm × 4.4 mm body, 0.65 mm pitch, ECOPACK® lead-free finish per JEDEC JESD97.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level Power MOSFET applications.

Compared with AO3400 and SI2305DS, STC5NF20V delivers the lowest R_DS(on) at 2.7 V (0.037 Ω), best thermal performance in TSSOP8, and optimal balance of gate drive simplicity and power efficiency for 5 A switching loads.

Availability

STC5NF20V is available at Aetrix Electronics and suitable for USB power delivery, portable DC-DC converters, LED backlight control, and smartphone battery protection requiring stable component supply and legacy design continuity.

Supply support for STC5NF20V includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and consumer markets.

The STripFET™ Power MOSFET product line targets high-efficiency, low-voltage switching applications where logic-level drive, thermal reliability, and space-constrained packaging are essential.

FAQ

Is STC5NF20V still in active production?

No-STC5NF20V is marked as Obsolete in ST's official documentation (Rev 6, Oct 2007). However, Aetrix Electronics maintains legacy inventory with full traceability and supports ongoing production runs for qualified designs requiring this specific parametric fit and footprint.

What is the maximum safe operating temperature for STC5NF20V?

The maximum operating junction temperature is 150 °C, with storage temperature ranging from –55 to 150 °C. At T_C = 100 °C, the continuous drain current derates to 3 A, and thermal resistance is 83.5 °C/W on minimum recommended footprint per Table 3.

Can STC5NF20V be used in synchronous rectification?

Yes-the integrated source-drain diode has 1.2 V forward voltage at 5 A and 26 ns reverse recovery time, enabling use in low-voltage synchronous buck topologies. Its low R_DS(on) and fast switching (t_f = 10 ns) reduce conduction and transition losses versus discrete diodes.

Does STC5NF20V require a gate resistor for EMI control?

A gate resistor is recommended: typical evaluation uses 4.7 Ω (per Figure 14). This value balances switching speed (t_d(on) = 7 ns, t_f = 10 ns) against ringing and EMI; values >10 Ω significantly increase switching losses without meaningful noise reduction in most 5 A applications.