STMicroelectronics STC6NF30V

Overview

STC6NF30V from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in TSSOP8 package, rated for 30V V_DS, 6A continuous drain current at 25°C, and ultra-low 0.020Ω R_DS(on) at V_GS = 4.5V. It features 2.5V logic-level gate drive compatibility, double-die common-drain configuration, and is optimized for high-efficiency DC-DC converter synchronous rectification.

For engineers reviewing the STC6NF30V datasheet, STC6NF30V pinout, STC6NF30V application, or STC6NF30V equivalent, key selection criteria include its 2.5V threshold voltage, 0.025Ω on-resistance at 2.5V gate drive, thermal resistance of 83.5°C/W on minimum footprint, pulsed drain current capability of 24A, and ECOPACK® lead-free packaging compliance.

Technical Context

This MOSFET employs ST's STripFET™ II process with single-feature-size strip geometry to achieve high cell density and low conduction loss. Its double-die common-drain layout supports parallel operation without external balancing components while maintaining symmetric source–drain parasitics.

The device delivers 18S forward transconductance at V_DS = 10V and I_D = 6A, with total gate charge of 6.8nC at V_GS = 2.5V and V_DD = 15V. Its reverse recovery time is 25ns under I_SD = 6A, di/dt = 100A/µs, and T_J = 150°C conditions.

Key Specifications

Pinout & Package

TSSOP8 package: 4.4mm × 3.0mm body, 0.65mm pitch, exposed thermal pad (EP) on underside for enhanced heat dissipation. JEDEC MO-153 compliant, ECOPACK® certified.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level Power MOSFET applications.

Compared with STP6NF30L and DMN3025LSD-13, STC6NF30V uniquely balances TSSOP8 surface-mount compatibility, 6A current capacity, and 2.5V gate drive in a single package-making it optimal for space- and thermal-constrained 12–24V embedded power stages.

Availability

STC6NF30V is available at Aetrix Electronics and suitable for DC-DC synchronous rectifiers, USB-C power delivery switches, and automotive body control modules requiring stable component supply and long-term industrial lifecycle support.

Supply support for STC6NF30V includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for industrial, automotive, and consumer markets.

The STripFET™ II product line targets high-efficiency power conversion applications, emphasizing low R_DS(on), logic-level gate drive, and thermally robust packaging for embedded power management.

FAQ

Is STC6NF30V suitable for high-frequency switching above 1MHz?

Yes-its 6.8nC total gate charge and 25ns/13ns rise/fall times support operation up to 2MHz in hard-switched topologies. However, switching losses increase significantly above 1MHz due to fixed 800pF C_iss; gate driver strength and PCB layout must minimize loop inductance to maintain waveform integrity.

Can STC6NF30V replace a P-channel MOSFET in high-side load switching?

No-it is an N-channel device requiring gate voltage above source potential for conduction. For high-side switching, it must be used with a charge-pump or bootstrap gate driver. Direct replacement of P-channel devices (e.g., for 12V loads) is not possible without additional driver circuitry.

What is the maximum safe operating area (SOA) limitation at 100°C case temperature?

At T_C = 100°C, the continuous drain current is derated to 3.8A per absolute maximum ratings table. Pulse operation remains limited to 24A only if pulse width is ≤100µs and duty cycle ≤1.5%, as defined by SOA curves in Figure 1 of the datasheet.

Does the exposed pad (EP) require electrical connection to source or can it be left floating?

The exposed pad must be soldered to a PCB thermal pad electrically connected to the source terminals (pins 1–4). Leaving it unconnected degrades thermal performance by >40% and risks mechanical delamination during thermal cycling-JEDEC MO-153 specifies EP as integral to source and thermal path.