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STMicroelectronics STD100NH02LT4

Part No.:
STD100NH02LT4
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixSTD100NH02LT4.pdf
Description:
MOSFET N-CH 24V 60A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,582

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Product details

Overview

STD100NH02LT4 from STMicroelectronics is an N-channel 24 V, 60 A, 4.2 mΩ RDS(on) Power MOSFET in DPAK package, utilizing STripFET™ II technology for high-efficiency DC-DC converters. It delivers low conduction loss (Pconduction = δ·IL²·RDS(on)), low gate charge (Qg = 62 nC), and fast switching (tr = 200 ns) in synchronous buck low-side switch applications.

For engineers reviewing the STD100NH02LT4 datasheet, STD100NH02LT4 pinout, STD100NH02LT4 application, or STD100NH02LT4 equivalent, this device is selected for high-current, low-voltage power stages where RDS(on), Qgls, Coss, and Qrr are critical for minimizing total power loss in synchronous rectification.

Technical Context

This MOSFET is optimized as a low-side switch in synchronous buck converters, with third-quadrant gate charge (Qgls = 56.5 nC) and low reverse recovery charge (Qrr = 58 µC) enabling efficient body-diode commutation. Its RDS(on) of 4.2 mΩ at VGS = 10 V and 30 A ensures minimal conduction loss under heavy load.

The device features low output capacitance (Coss = 1020 pF) and low gate-drain charge (Qgd = 8 nC), reducing switching loss and improving voltage transient immunity. Thermal resistance RthJC = 1.5 °C/W supports high-power operation with effective heatsinking.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 24 V - Maximum drain-source blocking voltage for 24 V rail systems
RDS(on) 4.2 mΩ @ VGS = 10 V, ID = 30 A - Enables <1.8 W conduction loss at 60 A
ID (cont) 60 A @ TC = 25°C - Rated continuous current limited by wire bonding
Qg 62 nC @ VDD = 10 V, ID = 30 A - Determines gate driver power and switching speed
Coss 1020 pF @ VDS = 15 V - Impacts turn-off energy and resonant losses in hard-switched topologies
Qrr 58 µC @ ISD = 60 A, di/dt = 100 A/µs - Directly contributes to high-side FET turn-on loss in synchronous buck
RthJC 1.5 °C/W - Enables 67 W dissipation before junction exceeds 150°C with 100°C case temperature

Pinout & Package

DPAK (TO-252) package with exposed drain pad for thermal and electrical connection; 3-terminal surface-mount configuration.

Pin/Terminal Circuit Role Design Meaning
1 (Gate) Control input Receives gate drive signal; requires external Rg = 4.7 Ω for specified tr/tf
2 (Source) Reference node / return path Common source for internal channel and body diode; connects to power ground in low-side configuration
3 (Drain) Main current output / heat sink interface Connected to output node in low-side switch; exposed pad provides primary thermal path to PCB copper

Key Features

Feature Design Value
STripFET™ II process Enables industry-leading RDS(on) × Qg figure-of-merit for 24 V systems
Low Qgls 56.5 nC - Reduces gate drive loss during body-diode conduction in synchronous rectification
Low Coss 1020 pF - Minimizes turn-off energy and improves light-load efficiency in buck converters
ECOPACK® compliant Lead-free second-level interconnect per JEDEC JESD97 - Supports RoHS-compliant manufacturing
High avalanche ruggedness EAS = 800 mJ - Withstands unclamped inductive switching stress without failure

Applications

Server VRM Industrial DC-DC Module

Use Scenario: 12 V input to 1.2 V/60 A output on server CPU voltage regulator modules.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in dual-phase interleaved buck converter.

Use Value: 4.2 mΩ RDS(on) and 56.5 nC Qgls reduce conduction + body-diode recovery loss by ~18% vs. legacy 5.5 mΩ devices.

Use Scenario: 24 V industrial bus powering 5 V/20 A isolated auxiliary supplies.

IC Role / Device Role / Timing Role: Primary low-side switch in non-isolated buck stage feeding downstream flyback controller.

Use Value: 1.5 °C/W RthJC enables full 60 A rating with 2 oz copper and thermal vias-no external heatsink required.

Telecom POL Converter Automotive ADAS ECU Power Stage

Use Scenario: Point-of-load conversion in 48 V telecom shelf systems delivering 3.3 V/30 A to FPGA banks.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in multiphase buck with >1 MHz switching.

Use Value: 8 nC Qgd limits Miller-induced shoot-through risk during high dv/dt transitions at 1.2 MHz.

Use Scenario: 12 V battery-fed 5 V/15 A power supply for radar processor and camera interface in ADAS domain controller.

IC Role / Device Role / Timing Role: Low-side switch in compact, thermally constrained buck regulator meeting AEC-Q101 stress requirements.

Use Value: -55°C to 175°C Tstg/TJ rating supports under-hood ambient operation up to 125°C case temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-side synchronous rectifier applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRLHS6242PBF RDS(on) = 3.2 mΩ @ 4.5 V but Qg = 42 nC; smaller DFN5 package (no exposed drain pad) Lower gate drive voltage compatibility (4.5 V logic); unsuitable for >40 A due to thermal limitations Prefer when driving from 3.3 V controllers and current ≤40 A with active cooling
DMTH6005LPS RDS(on) = 4.8 mΩ @ 10 V, Qg = 55 nC, RthJC = 1.7 °C/W; same DPAK footprint Slightly higher conduction loss but tighter Qg/Qgd ratio improves noise immunity in noisy automotive environments Prefer when EMI robustness and AEC-Q101 qualification are mandatory over minimal RDS(on)

Compared with IRLHS6242PBF and DMTH6005LPS, STD100NH02LT4 offers the lowest RDS(on) × Qg product in DPAK, making it optimal for high-current, thermally constrained 24 V buck stages where conduction loss dominates total loss budget.

Availability

STD100NH02LT4 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC modules, and telecom POL converters requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for STD100NH02LT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and power management applications.

This device belongs to ST's STripFET™ II Power MOSFET product line, engineered specifically for high-efficiency, high-current DC-DC conversion in computing, telecom, and industrial power supplies.

FAQ

What is the maximum safe operating junction temperature for STD100NH02LT4?

The maximum operating junction temperature is 175°C, as specified in the Absolute Maximum Ratings table. Operation above this limit risks permanent degradation of the silicon die and bond wires. Derating begins at TC = 25°C with a thermal resistance of 1.5 °C/W junction-to-case, requiring careful PCB thermal design to maintain safe TJ under 60 A load.

Can STD100NH02LT4 be used as a high-side switch in a buck converter?

No-it is optimized as a low-side synchronous rectifier. Its gate threshold voltage (VGS(th) = 1.0–1.8 V) and lack of integrated bootstrap circuitry make it unsuitable for high-side floating gate drive. High-side use would require ≥24 V gate drive relative to source, exceeding its ±20 V VGS rating and risking gate oxide failure.

Is STD100NH02LT4 qualified for automotive applications?

STD100NH02LT4 is not AEC-Q101 qualified. While its TJ range (-55°C to 175°C) and construction meet some automotive environmental requirements, ST does not certify this part for automotive use. For ADAS or body control modules, DMTH6005LPS or ST's AEC-Q101-qualified STD100NH02L-1 (IPAK variant) should be selected instead.

What is the significance of Qgls = 56.5 nC in system-level design?

Qgls quantifies gate charge required to turn on the MOSFET while its source is driven negative relative to drain-critical during body-diode conduction in synchronous buck operation. A lower Qgls reduces gate driver power consumption and minimizes delay between body-diode turn-off and channel turn-on, directly lowering cross-conduction and reverse recovery losses in the complementary high-side switch.

STD100NH02LT4 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
STripFET™ II
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
24 V
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
4.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:
1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
84 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3940 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
100W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

STD100NH02LT4 FAQ

1.How can I place an order for STD100NH02LT4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD100NH02LT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD100NH02LT4 reliable?

The price and inventory of STD100NH02LT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD100NH02LT4 is usually 5 days.

3.What payment methods are accepted for STD100NH02LT4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD100NH02LT4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD100NH02LT4?

STD100NH02LT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD100NH02LT4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD100NH02LT4?

For technical support, including STD100NH02LT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD100NH02LT4 requirements.

6.How does Aetrix verify that STD100NH02LT4 is sourced from the original manufacturer or authorized distributors?

All STD100NH02LT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD100NH02LT4 meets industry standards.

7.What is the process for return or replacement of STD100NH02LT4?

All STD100NH02LT4 units undergo pre-shipment inspection (PSI). If there is an issue with STD100NH02LT4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD100NH02LT4 part is unused and in its original packaging.

Return procedure for STD100NH02LT4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STD100NH02LT4 Tags

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