STMicroelectronics STD100NH03LT4

Overview

STD100NH03LT4 from STMicroelectronics is an N-channel 30V power MOSFET in DPAK package, featuring R_DS(on) = 0.005 Ω (typ.) at V_GS = 10 V and 30 A, 60 A continuous drain current, and optimized for high-efficiency DC-DC converters. It employs STripFET™ III technology to minimize conduction and switching losses in synchronous buck topologies.

For engineers reviewing the STD100NH03LT4 datasheet, STD100NH03LT4 pinout, STD100NH03LT4 application, or STD100NH03LT4 equivalent, this device is selected for low-voltage, high-current power stages where gate charge (Q_g = 57 nC), output capacitance (C_oss = 680 pF), and third-quadrant gate charge (Q_gls = 55 nC) directly impact efficiency and cross-conduction risk.

Technical Context

This MOSFET is engineered as a low-side switch in synchronous buck converters, with a 1.0–2.5 V gate threshold (V_GS(th)) enabling compatibility with 3.3 V and 5 V gate drivers. Its low R_DS(on) and minimized Q_gls reduce body-diode conduction loss and reverse recovery energy (Q_rr = 64 µC).

The device exhibits R_thJC = 1.5 °C/W and supports pulsed drain current up to 240 A, validated under unclamped inductive switching (UIS) with E_AS = 700 mJ. Its DPAK thermal pad enables direct PCB copper pour attachment for enhanced heat dissipation in high-power density designs.

Key Specifications

Pinout & Package

DPAK (TO-252) package with exposed drain pad on bottom side for thermal and electrical connection; standard 3-pin configuration: Gate (G), Drain (D), Source (S).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Compared with IRL3803PBF and DMN3025LSD-13, STD100NH03LT4 delivers balanced FoM for 300–800 kHz buck converters, with verified Q_gls and avalanche rating supporting robust synchronous rectification - making it optimal for thermally demanding, high-reliability industrial and telecom power stages.

Availability

STD100NH03LT4 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC modules, and telecom power supplies requiring stable component supply across long-lifecycle production programs.

Supply support for STD100NH03LT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs and discrete power devices for industrial, automotive, and consumer markets.

This device belongs to ST's STripFET™ III power MOSFET product line, developed specifically for high-efficiency, high-current DC-DC conversion in computing, telecom, and industrial power systems where low R_DS(on) × Q_g FoM is critical.

FAQ

Is STD100NH03LT4 suitable for 3.3 V gate drive?

Yes - its gate threshold voltage (V_GS(th)) ranges from 1.0 V to 2.5 V, and it achieves R_DS(on) ≤ 0.0105 Ω at V_GS = 5 V and I_D = 30 A. While full enhancement requires ≥10 V, it operates reliably in partial-enhancement mode with 3.3 V logic drivers in low-duty-cycle or low-current applications, though conduction loss increases significantly above 20 A.

What is the maximum continuous drain current at 100°C case temperature?

The datasheet specifies ID = 60 A (continuous) at both T_C = 25°C and T_C = 100°C. This rating is limited by wire bonding capacity, not thermal derating - confirmed in Table 1 footnote "1. Value limited by wire bonding." Derating applies only to total power dissipation (PTOT = 100 W at 25°C, derated by 0.66 W/°C above 25°C).

Does STD100NH03LT4 have integrated ESD protection on the gate?

No - the device does not include on-chip gate ESD protection. The absolute maximum V_GS rating is ±20 V, and gate leakage (I_GSS) is specified at ±100 nA at ±20 V. External gate resistors (typically 10–47 Ω) and Zener clamps are recommended to prevent electrostatic damage during handling and PCB assembly.

Can STD100NH03LT4 be used in avalanche mode repeatedly?

No - while rated for single-pulse avalanche energy (E_AS = 700 mJ), the datasheet does not specify repetitive avalanche capability. The Safe Operating Area (SOA) curve (Figure 1) shows only DC and pulsed boundaries, with no repetitive UIS data. For designs subject to recurring inductive transients, external clamping or snubbing is required.