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STMicroelectronics STD10N60DM2

Name: STD10N60DM2
Brand: STMicroelectronics
SKU: STD10N60DM2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STD10N60DM2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: STD10N60DM2.pdf

Description:: MOSFET N-CH 650V 8A DPAK

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Product details

Overview

STD10N60DM2 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh DM2 series, featuring 600 V V_DS, 440 mΩ typ. R_DS(on) at V_GS = 10 V and 8 A continuous drain current at T_C = 25 °C. Its fast-recovery body diode (t_rr = 90 ns @ T_J = 25 °C), low Q_g (15 nC), and high dv/dt ruggedness (50 V/ns) make it suitable for ZVS phase-shift converters and full-bridge topologies.

For engineers reviewing the STD10N60DM2 datasheet, STD10N60DM2 pinout, STD10N60DM2 application, or STD10N60DM2 equivalent, key selection criteria include its 600 V breakdown voltage, 100% avalanche-tested reliability, DPAK (TO-252) thermal resistance (R_thJC = 1.14 °C/W), and low reverse recovery charge (Q_rr = 225 nC @ T_J = 25 °C).

Technical Context

This MOSFET employs ST's MDmesh DM2 silicon technology optimized for high-voltage switching with integrated fast-recovery body diode. It delivers low conduction loss (R_DS(on) = 440 mΩ typ.) and minimal switching loss via ultra-low C_iss (529 pF) and C_rss (0.72 pF), enabling high-frequency operation up to 500 kHz in resonant converters.

The device supports unclamped inductive switching with 300 mJ single-pulse avalanche energy and operates reliably across –55 to 150 °C junction temperature range. Its gate threshold voltage (V_GS(th) = 3–5 V) ensures robust turn-on control with standard 10 V gate drivers while maintaining noise immunity.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 400 V in 3-phase PFC or 480 VAC rectified systems with margin.
R_DS(on) max	530 mΩ - Limits conduction loss to ≤17 W at 8 A, enabling compact heatsink design in 100–300 W SMPS.
Q_g	15 nC - Reduces gate drive power requirement and enables use of low-power drivers like STGAP2SIC.
t_rr	90 ns @ T_J = 25 °C - Minimizes diode recovery loss and EMI in hard-switched bridge legs.
dv/dt ruggedness	50 V/ns - Ensures reliable operation under fast transient conditions without spurious turn-on.
E_AS	300 mJ - Supports robust unclamped inductive switching in motor drives and UPS output stages.
R_thJC	1.14 °C/W - Enables 109 W power dissipation with moderate heatsinking at T_C = 25 °C.

Pinout & Package

STD10N60DM2 is housed in a surface-mount DPAK (TO-252) package with exposed drain tab for thermal and electrical connection. The package features gull-wing leads compatible with standard reflow profiles and provides low-inductance source-drain routing.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	High-impedance MOSFET control terminal; requires <15 nC charge for full enhancement; sensitive to ESD.
2 (D / TAB)	Drain / Thermal Pad	Main high-voltage power terminal and primary thermal path; must be soldered to large copper pour for R_thJC optimization.
3 (S)	Source	Reference node for gate drive and current sensing; connects to low-side switch node or ground return path.

Key Features

Feature	Design Value
Fast-recovery body diode	t_rr = 90 ns and Q_rr = 225 nC enable zero-voltage switching in LLC and phase-shifted full-bridge converters.
Extremely low gate charge	Q_g = 15 nC reduces driver losses and allows higher switching frequencies without gate drive overheating.
100% avalanche tested	Each unit passes single-pulse avalanche stress test (E_AS = 300 mJ), ensuring field reliability in inductive load transients.
Zener-protected gate	Integrated gate oxide protection clamps V_GS to ±25 V, eliminating need for external gate Zener in most designs.
High dv/dt ruggedness	50 V/ns rating prevents false turn-on during high-slew-rate commutation in half-bridge configurations.

Applications

Industrial Motor Drives

Server & Telecom PSU

Use Scenario: Output stage in 3 kW servo drive inverters using 600 V DC bus.

IC Role / Device Role / Timing Role: Low-side switching element in three-phase IGBT/MOSFET inverter leg with synchronous body diode commutation.

Use Value: 90 ns t_rr reduces shoot-through risk and diode recovery loss by >40% vs. standard 600 V MOSFETs.

Use Scenario: Primary-side switch in 80+ Titanium 3.3 kW telecom rectifier with phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: High-efficiency ZVS switch operating at 200–300 kHz with soft-switched turn-off.

Use Value: 15 nC Q_g lowers gate drive loss by 35% versus comparable 650 V Si devices, improving system efficiency by 0.4%.

EV Onboard Charger

Renewable Energy Inverters

Use Scenario: AC/DC PFC and DC/DC isolation stage in bi-directional 11 kW OBC.

IC Role / Device Role / Timing Role: Active clamp switch and synchronous rectifier driver in dual-active-bridge converter.

Use Value: 530 mΩ R_DS(on) max ensures ≤1.7 W conduction loss at 8 A, supporting >98% peak efficiency.

Use Scenario: String-level DC optimizer and microinverter power stage handling 600–1000 V PV input.

IC Role / Device Role / Timing Role: High-voltage switch in interleaved flyback or LLC resonant converter with wide input range.

Use Value: 600 V V_DS rating accommodates 1000 V PV open-circuit voltage with 1.67× safety margin per IEC 62109.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NK60ZFP	600 V, 650 mΩ R_DS(on), no fast diode (t_rr > 500 ns), Zener-protected gate retained.	Limited to hard-switched topologies; unsuitable for ZVS or bridge rectification due to slow body diode.	Select only when cost sensitivity outweighs efficiency requirements and diode recovery is externally managed.
IXTH10N60L2	600 V, 520 mΩ R_DS(on), t_rr = 120 ns, Q_g = 22 nC, no integrated Zener.	Requires external gate protection; higher Q_g increases driver complexity in high-frequency designs.	Prefer where higher avalanche energy (E_AS = 420 mJ) is critical, but verify gate protection implementation.

Compared with STP10NK60ZFP and IXTH10N60L2, STD10N60DM2 uniquely balances low Q_g, fast t_rr, and integrated Zener protection-making it optimal for space-constrained, high-efficiency ZVS converters where gate drive simplicity and diode recovery performance are co-critical.

Availability

STD10N60DM2 is available at Aetrix Electronics and suitable for industrial motor drives, server & telecom power supplies, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STD10N60DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and microcontrollers for industrial, automotive, and consumer markets.

STD10N60DM2 belongs to the MDmesh DM2 high-voltage MOSFET product line, engineered specifically for high-efficiency resonant and soft-switching power converters demanding low Q_rr, high dv/dt immunity, and robust avalanche capability.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STD10N60DM2 supports 5 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS11669 Rev 2. This derating reflects thermal limits of the DPAK package and ensures safe operation within SOA boundaries at elevated ambient temperatures.

Does this MOSFET require external gate protection?

No. STD10N60DM2 integrates Zener protection on the gate oxide, rated for ±25 V V_GS. External gate clamping is unnecessary unless operating in extreme ESD environments beyond IEC 61000-4-2 Level 4.

How does the body diode performance compare to standard 600 V MOSFETs?

Its body diode achieves t_rr = 90 ns and Q_rr = 225 nC at T_J = 25 °C-approximately 4× faster and 3× lower Q_rr than typical 600 V planar MOSFETs-enabling efficient synchronous rectification and reduced EMI in bridge topologies.

Is the DPAK package lead-free and RoHS compliant?

Yes. STD10N60DM2 is offered in ECOPACK2-compliant DPAK packages, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. Lead finish is matte tin, and halogen-free molding compound is used per ST's ECOPACK specifications.

STD10N60DM2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ DM2

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 530mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 529 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 109W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

STD10N60DM2 FAQ

1.How can I place an order for STD10N60DM2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STD10N60DM2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STD10N60DM2 reliable?

The price and inventory of STD10N60DM2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STD10N60DM2 is usually 5 days.

3.What payment methods are accepted for STD10N60DM2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STD10N60DM2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STD10N60DM2?

STD10N60DM2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STD10N60DM2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STD10N60DM2?

For technical support, including STD10N60DM2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STD10N60DM2 requirements.

6.How does Aetrix verify that STD10N60DM2 is sourced from the original manufacturer or authorized distributors?

All STD10N60DM2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STD10N60DM2 meets industry standards.

7.What is the process for return or replacement of STD10N60DM2?

All STD10N60DM2 units undergo pre-shipment inspection (PSI). If there is an issue with STD10N60DM2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STD10N60DM2 part is unused and in its original packaging.

Return procedure for STD10N60DM2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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